Effects of Cutting Angles in Ti-6al-4v Milling Process on Surface Integrity: Influence of Roughness and Residual Stresses on Fatigue Limit

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New route for BST synthesis by soft chemistry

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A Monolithic On-chip 15 GHz Phase-Shifter

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Influence du surfaçage sur l'intégrité de surface et la tenue en fatigue des pièces en alliages de Titane (Ti6Al4V)

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Copper Electrodeposition into Macroporous Silicon Arrays for through Silicon via Applications

International audienceThe present paper deals with the formation of high conductivity through silicon via from macroporous silicon arrays. The through wafer macropores were first etched by anodization into a hydrofluoric acid – ethanol mixture. The conditions of straight and ordered macropore etching were studied. The high aspect ratio (18) and high density via (above 105/cm2) were then filled by copper using an optimized potentiostatic technique involving a specific electrolyte with additives. The copper micro-wires were observed by SEM whereas XRD analysis enabled the determination of the average grain size

Copper Electrochemical Deposition in Macroporous Silicon Arrays for Through Silicon Via Applications

The present paper deals with the realization of high conductivity through silicon via from macroporous silicon arrays. The pores were first etched by anodization into a hydrofluoric acid mixture. The high aspect ratio via were then filled by an optimized potentiostatic way involving a specific electrolyte with additives. The copper micro-wires were observed by SEM whereas XRD analysis enabled the determination of copper average grain size

Novel Method Based on Spin-Coating for the Preparation of 2D and 3D Si-Based Anodes for Lithium Ion Batteries

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Localized protection of high aspect ratio trenches based on the anisotropy manipulation of plasma-polymerized fluoropolymer coating

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Single and multilayered materials processing by argon ion beam etching: study of ion angle incidence and defect formation

International audienceIon beam etching (IBE) is a very promising technique in microelectronics because of its capability to etch small patterns with a high resolution and inert materials. In this study, the angular incidence of an argon ion beam on the etch rate and uniformity is discussed in the case of several materials often used in microelectronics. The capability of the IBE technique to etch multilayered stack samples with positive anisotropic profiles was demonstrated on TiNiAu, TiNiCuAu, BST and PZT. Two typical defects involved in IBE processing (fences and not etched pattern foots) due to shadow masking and redeposition effect, are explained and solutions are presented to avoid them. Deep IBE was performed on GaN with an etch depth as high as 10 μm, using a 8 μm thick SiO2 mask. The etching of other mask materials, such as TiN, was investigated in order to improve the selectivity. Using a TiN mask, a selectivity to GaN as high as 5 is reported. Finally, the etch rate enhancement needed for deep etching was studied

Intégration de zones dopées distribuées pour la réalisation d’un Switch SPDT à 5 GHz

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