645 research outputs found

    Spark Plasma Sintering of Boron Carbide Powder

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    The results presented in this article demonstrate that boron carbide ceramics of a perfect microstructure, of a high density (up to 99.8%) and microhardness (36.1 GPa) can be made from the industrial micron fraction powder thanks to spark plasma sintering, that opens prospects for wide SPS application in economical production of high-quality boron carbide ceramic products. Optimal ceramics production mode is based on B4C (technical powder), which makes the best combination of physical and mechanical properties and uniformmicrostructure. The experimentally set mode of spark-plasma sintering of highdensity B4C ceramics allows to lower the sintering temperature by 300 ∘C and to shorten the process time by 20 minutes relative to the corresponding values when traditional hot pressing. Keywords: spark - plasma sintering, boron carbide, densit

    Calculation of thermal parameters of SiGe microbolometers

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    The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the values found experimentally and range between 2x10βˆ’7^-7 and 7x10βˆ’8^-8 W/K and 1.5 and 4.5 ms, respectively. High sensitivity of microbolometer is achieved due to optimization of the thermal response time and thermal conduction by fitting the geometry of supporting heat-removing legs or by selection of a suitable material providing boundary thermal resistance higher than 8x10βˆ’3^-3 cm2^2K/W at the SiGe interface.Comment: 11 pages, 6 figure

    Coherent spin dynamics of electrons and holes in CsPbBr3_3 perovskite crystals

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    The lead halide perovskites demonstrate huge potential for optoelectronic applications, high energy radiation detectors, light emitting devices and solar energy harvesting. Those materials exhibit strong spin-orbit coupling enabling efficient optical orientation of carrier spins in perovskite-based devices with performance controlled by a magnetic field. Perovskites are promising for spintronics due to substantial bulk and structure inversion asymmetry, however, their spin properties are not studied in detail. Here we show that elaborated time-resolved spectroscopy involving strong magnetic fields can be successfully used for perovskites. We perform a comprehensive study of high-quality CsPbBr3_3 crystals by measuring the exciton and charge carrier gg-factors, spin relaxation times and hyperfine interaction of carrier and nuclear spins by means of coherent spin dynamics. Owing to their "inverted" band structure, perovskites represent appealing model systems for semiconductor spintronics exploiting the valence band hole spins, while in conventional semiconductors the conduction band electrons are considered for spin functionality.Comment: 8 pages, 3 figures + supplementary informatio

    Group analysis and renormgroup symmetries

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    An original regular approach to constructing special type symmetries for boundary value problems, namely renormgroup symmetries, is presented. Different methods of calculating these symmetries, based on modern group analysis are described. Application of the approach to boundary value problems is demonstrated with the help of a simple mathematical model.Comment: 17 pages, RevTeX LATeX file, to appear in Journal of Mathematical Physic

    Influence of plasma volume discharge in atmospheric-pressure air on the admittance of MIS structures based on MBE p-HgCdTe

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    This article investigates the effect of a nanosecond plasma volume discharge, which is formed in an inhomogeneous electrical field at atmospheric pressure, on the electrical properties of MIS structures based on HgCdTe (MCT) epitaxial films. The MIS structure based on films exposed to the discharge significantly changed its main parameters. The most notable feature of the structure exposed to discharge is the significant increase in the positive fixed charge in the insulator. A possible reason for changes in the characteristics of MIS structure after exposure to discharge is the significant change in the impurity-defect system of the semiconductor near the interface. This is accompanied with a formation of an insulator film of nanometer thickness on the surface, which gives rise to positive fixed charge

    ΠžΡΠΎΠ±Π΅Π½Π½ΠΎΡΡ‚ΠΈ Ρ€Π΅Ρ„Π»Π΅ΠΊΡ‚ΠΎΡ€Π½ΠΎΠΉ рСгуляции кардиорСспираторной систСмы ΠΏΡ€ΠΈ бСрСмСнности: систСматичСский ΠΎΠ±Π·ΠΎΡ€ Π»ΠΈΡ‚Π΅Ρ€Π°Ρ‚ΡƒΡ€Ρ‹

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    ΠΠšΠ’Π£ΠΠ›Π¬ΠΠžΠ‘Π’Π¬: Π’Ρ€Π°Ρ‡ΡƒΒ β€” анСстСзиологу-Ρ€Π΅Π°Π½ΠΈΠΌΠ°Ρ‚ΠΎΠ»ΠΎΠ³Ρƒ ΠΏΡ€ΠΈ составлСнии ΠΏΠ»Π°Π½Π° анСстСзиологичСского обСспСчСния ΠΎΠΏΠ΅Ρ€Π°Ρ†ΠΈΠΈ кСсарСва сСчСния Π½Π΅ΠΎΠ±Ρ…ΠΎΠ΄ΠΈΠΌΠΎ Π·Π½Π°Ρ‚ΡŒ ΠΎΒ Ρ‚ΠΎΠΌ, ΠΊΠ°ΠΊΠΈΠ΅ физиологичСскиС ΠΈΒ Ρ„ΡƒΠ½ΠΊΡ†ΠΈΠΎΠ½Π°Π»ΡŒΠ½Ρ‹Π΅ особСнности ΠΈΠΌΠ΅Π΅Ρ‚ бСрСмСнная ΠΏΠ°Ρ†ΠΈΠ΅Π½Ρ‚ΠΊΠ° Π²Β Ρ‚ΠΎΠΌ ΠΈΠ»ΠΈ ΠΈΠ½ΠΎΠΌ срокС гСстации. ΠŸΡ€Π°Π²ΠΈΠ»ΡŒΠ½ΠΎΠ΅ составлСниС ΠΏΠ»Π°Π½Π° анСстСзии ΠΈΒ Ρ‚Π°ΠΊΡ‚ΠΈΠΊΠΈ вСдСния ΠΏΠ°Ρ†ΠΈΠ΅Π½Ρ‚ΠΎΠΊ Π²Β ΠΏΠ΅Ρ€ΠΈΠΎΠΏΠ΅Ρ€Π°Ρ†ΠΈΠΎΠ½Π½ΠΎΠΌ ΠΏΠ΅Ρ€ΠΈΠΎΠ΄Π΅ ΠΏΠΎΠΌΠΎΠ³Π°Π΅Ρ‚ ΡΠ½ΠΈΠ·ΠΈΡ‚ΡŒ риск гСмодинамичСских, рСспираторных ΠΈΒ Π΄Ρ€ΡƒΠ³ΠΈΡ… критичСских ΠΈΠ½Ρ†ΠΈΠ΄Π΅Π½Ρ‚ΠΎΠ². Π¦Π•Π›Π¬ Π˜Π‘Π‘Π›Π•Π”ΠžΠ’ΠΠΠ˜Π―: Поиск Π΄Π°Π½Π½Ρ‹Ρ… о способах ΠΈΒ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Π°Ρ… ΠΎΡ†Π΅Π½ΠΊΠΈ кардиорСспираторного статуса Π±Π΅Ρ€Π΅ΠΌΠ΅Π½Π½Ρ‹Ρ… с использованиСм ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠ², Π·Π°Π΄Π΅ΠΉΡΡ‚Π²ΡƒΡŽΡ‰ΠΈΡ… Ρ‚Π°ΠΊΠΈΠ΅ ΠΊΠ»ΡŽΡ‡Π΅Π²Ρ‹Π΅ ΠΌΠ΅Ρ…Π°Π½ΠΈΠ·ΠΌΡ‹ Ρ€Π΅Ρ„Π»Π΅ΠΊΡ‚ΠΎΡ€Π½ΠΎΠΉ рСгуляции, ΠΊΠ°ΠΊ Π°Ρ€Ρ‚Π΅Ρ€ΠΈΠ°Π»ΡŒΠ½Ρ‹ΠΉ барорСфлСкс (АБР) и пСрифСричСский хСморСфлСкс (ПΠ₯Π ). ΠœΠΠ’Π•Π Π˜ΠΠ›Π« И ΠœΠ•Π’ΠžΠ”Π«: ΠœΡ‹ ΠΏΡ€ΠΎΠ²Π΅Π»ΠΈ систСматичСский ΠΎΠ±Π·ΠΎΡ€ Π»ΠΈΡ‚Π΅Ρ€Π°Ρ‚ΡƒΡ€Ρ‹ в соотвСтствии с рСкомСндациями PRISMA. Поиск Π±Ρ‹Π» ΠΏΡ€ΠΎΠ²Π΅Π΄Π΅Π½ Π²Β Π΄Π΅ΠΊΠ°Π±Ρ€Π΅ 2022Β Π³. Π²Β Π±Π°Π·Π°Ρ… Medline (Pubmed), «Российский индСкс Π½Π°ΡƒΡ‡Π½ΠΎΠ³ΠΎ цитирования» (РИНЦ, eLibrary.ru) ΠΈΒ Cochrane Library. Поиск производился ΠΏΠΎ запросам: Β«ΠΏΡ€ΠΎΠΈΠ·Π²ΠΎΠ»ΡŒΠ½ΠΎΠ΅ ΠΏΠΎΡ€ΠΎΠ³ΠΎΠ²ΠΎΠ΅ апноэ Π±Π΅Ρ€Π΅ΠΌΠ΅Π½Π½ΠΎΡΡ‚ΡŒΒ», «хСморСфлСкс Π±Π΅Ρ€Π΅ΠΌΠ΅Π½Π½ΠΎΡΡ‚ΡŒΒ», «барорСфлСкс Π±Π΅Ρ€Π΅ΠΌΠ΅Π½Π½ΠΎΡΡ‚ΡŒΒ», Β«ΠΏΡ€ΠΎΠ±Π° Π’Π°Π»ΡŒΡΠ°Π»ΡŒΠ²Ρ‹ Π±Π΅Ρ€Π΅ΠΌΠ΅Π½Π½ΠΎΡΡ‚ΡŒΒ», Β«pregnancy breath holding testΒ», Β«pregnancy chemoreflexΒ», Β«pregnancy baroreflexΒ», Β«Valsalva test pregnancyΒ». РЕЗУЛЬВАВЫ: Π‘Ρ‹Π»ΠΎ Π½Π°ΠΉΠ΄Π΅Π½ΠΎ 110Β Ρ€Π°Π±ΠΎΡ‚, послС удалСния ΠΏΠΎ Ρ€Π°Π·Π»ΠΈΡ‡Π½Ρ‹ΠΌ ΠΏΡ€ΠΈΡ‡ΠΈΠ½Π°ΠΌ 68Β Ρ€Π°Π±ΠΎΡ‚ Π±Ρ‹Π»ΠΎ ΠΏΡ€ΠΎΠ°Π½Π°Π»ΠΈΠ·ΠΈΡ€ΠΎΠ²Π°Π½ΠΎ 42 полнотСкстовых источника, Π²Β Ρ‚ΠΎΠΌ числС ΠΏΡ€ΠΎΠ²Π΅Π΄Π΅Π½ ΠΏΠΎΠ΄Ρ€ΠΎΠ±Π½Ρ‹ΠΉ ΡΡ€Π°Π²Π½ΠΈΡ‚Π΅Π»ΡŒΠ½Ρ‹ΠΉ Π°Π½Π°Π»ΠΈΠ· 8 источников, ΠΏΠΎΠ»Π½ΠΎΡΡ‚ΡŒΡŽ ΡΠΎΠΎΡ‚Π²Π΅Ρ‚ΡΡ‚Π²ΡƒΡŽΡ‰ΠΈΡ… критСриям Π²ΠΊΠ»ΡŽΡ‡Π΅Π½ΠΈΡ. Π”ΠΈΠ·Π°ΠΉΠ½, Ρ†Π΅Π»ΠΈ, ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ‹, Π΄ΠΎΡΡ‚ΡƒΠΏΠ½ΠΎΡΡ‚ΡŒ Π΄Π°Π½Π½Ρ‹Ρ… ΠΈΒ ΠΊΠΎΠ½Π΅Ρ‡Π½Ρ‹Π΅ Ρ€Π΅Π·ΡƒΠ»ΡŒΡ‚Π°Ρ‚Ρ‹ исслСдований Π±Ρ‹Π»ΠΈ Π½Π΅ΠΎΠ΄Π½ΠΎΡ€ΠΎΠ΄Π½Ρ‹ΠΌΠΈ, поэтому ΠΌΠ΅Ρ‚Π°Π°Π½Π°Π»ΠΈΠ· Π΄Π°Π½Π½Ρ‹Ρ… Π½Π΅ проводился. Π‘Ρ‹Π»ΠΈ ΠΈΠ·Π²Π»Π΅Ρ‡Π΅Π½Ρ‹ ΠΈΒ ΠΎΠ±ΠΎΠ±Ρ‰Π΅Π½Ρ‹ Π΄Π°Π½Π½Ρ‹Π΅ ΠΎΒ Ρ„ΡƒΠ½ΠΊΡ†ΠΈΠΎΠ½Π°Π»ΡŒΠ½Ρ‹Ρ… измСнСниях Π²Β Ρ€Π°Π±ΠΎΡ‚Π΅ кардиорСспираторной систСмы, происходящих ΠΏΡ€ΠΈ бСрСмСнности ΠΈΒ ΠΎΡ‚Ρ€Π°ΠΆΠ°ΡŽΡ‰ΠΈΡ…ΡΡ Π²Β ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΈ Ρ‡ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ АБР и ПΠ₯Π . Π’Π«Π’ΠžΠ”Π«: Π§ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ ПΠ₯Π  ΡƒΒ Π±Π΅Ρ€Π΅ΠΌΠ΅Π½Π½Ρ‹Ρ… ΠΌΠΎΠΆΠ½ΠΎ ΠΎΡ†Π΅Π½ΠΈΠ²Π°Ρ‚ΡŒ ΡΒ ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ вдыхания гипСроксичСской, гипСркапничСской и изооксичСски-гипСркапничСской Π³Π°Π·ΠΎΠ²ΠΎΠΉ смСси (Π²Π°Ρ€ΠΈΠ°Π½Ρ‚Ρ‹ ΠΏΡ€ΠΎΠ±Ρ‹ с возвратным Π΄Ρ‹Ρ…Π°Π½ΠΈΠ΅ΠΌ). Π§ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ АБР ΡƒΒ Π±Π΅Ρ€Π΅ΠΌΠ΅Π½Π½Ρ‹Ρ… ΠΌΠΎΠΆΠ½ΠΎ ΠΎΡ†Π΅Π½ΠΈΠ²Π°Ρ‚ΡŒ ΡΒ ΠΏΠΎΠΌΠΎΡ‰ΡŒΡŽ фСнилэфринового тСста ΠΏΡ€ΠΎΠ±Ρ‹ Π’Π°Π»ΡŒΡΠ°Π»ΡŒΠ²Ρ‹, ортостатичСской ΠΏΡ€ΠΎΠ±Ρ‹, Π°Β Ρ‚Π°ΠΊΠΆΠ΅ ΡΠΏΠ΅ΠΊΡ‚Ρ€Π°Π»ΡŒΠ½ΠΎΠ³ΠΎ Π°Π½Π°Π»ΠΈΠ·Π° ΠΏΠΎΡΠ»Π΅Π΄ΠΎΠ²Π°Ρ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚Π΅ΠΉ Π·Π½Π°Ρ‡Π΅Π½ΠΈΠΉ Π°Ρ€Ρ‚Π΅Ρ€ΠΈΠ°Π»ΡŒΠ½ΠΎΠ³ΠΎ давлСния ΠΈΒ ΠΈΠ½Ρ‚Π΅Ρ€Π²Π°Π»Π° R–R. Π§ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ ПΠ₯Π  ΠΏΡ€ΠΈ доношСнной бСрСмСнности увСличиваСтся. Π§ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΡŒ АБР ΡƒΒ Π±Π΅Ρ€Π΅ΠΌΠ΅Π½Π½Ρ‹Ρ… прогрСссивно сниТаСтся ΠΎΡ‚ Π½Π°Ρ‡Π°Π»Π° бСрСмСнности Π΄ΠΎ ΠΊΠΎΠ½Ρ†Π° II тримСстра ΠΈΒ ΠΏΠΎΠ²Ρ‹ΡˆΠ°Π΅Ρ‚ΡΡ в послСродовом ΠΏΠ΅Ρ€ΠΈΠΎΠ΄Π΅ Π΄ΠΎ исходного уровня; Π²Β III тримСстрС бСрСмСнности измСнСния Ρ‡ΡƒΠ²ΡΡ‚Π²ΠΈΡ‚Π΅Π»ΡŒΠ½ΠΎΡΡ‚ΠΈ АБР носят ΠΈΠ½Π΄ΠΈΠ²ΠΈΠ΄ΡƒΠ°Π»ΡŒΠ½Ρ‹ΠΉ Ρ…Π°Ρ€Π°ΠΊΡ‚Π΅Ρ€ ΠΈΒ Π½Π΅ ΠΈΠΌΠ΅ΡŽΡ‚ Π΅Π΄ΠΈΠ½ΠΎΠΉ Ρ‚Π΅Π½Π΄Π΅Π½Ρ†ΠΈΠΈ

    Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films

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    The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by molecular beam epitaxy. Hall measurements of electro-physical parameters of MCT samples after irradiation have shown that there is a layer of epitaxial films exhibiting n-type conductivity that is formed in the near-surface area. After more than 600 pulses of influence parameters and thickness of the resulting n-layer is such that the measured field dependence of Hall coefficient corresponds to the material of n-type conductivity. Also it is shown that the impact of the discharge leads to significant changes in electro-physical characteristics of MIS structures. This fact is demonstrated by increase in density of positive fixed charge, change in the hysteresis type of the capacitance-voltage characteristic, an increase in density of surface states. The preliminary results show that it is possible to use such actions in the development of technologies of the controlled change in the properties of MCT. Β© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only
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