Flux Qubits with Long Coherence Times for Hybrid Quantum Circuits

We present measurements of superconducting flux qubits embedded in a three dimensional copper cavity. The qubits are fabricated on a sapphire substrate and are measured by coupling them inductively to an on-chip superconducting resonator located in the middle of the cavity. At their flux-insensitive point, all measured qubits reach an intrinsic energy relaxation time in the 6-20 microseconds range and a pure dephasing time comprised between 3 and 10 microseconds. This significant improvement over previous works opens the way to the coherent coupling of a flux-qubit to individual spins

Leveraging nMOS Negative Differential Resistance for Low Power, High Reliability Magnetic Memory

International audienc

Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures

Magnetic tunnel junction (MTJ) based on CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA) is required to achieve high thermal stability. Here we use first-principles calculations to investigate the magnetic anisotropy energy (MAE) of MgO/CoFe/capping layer structures, where the capping materials include 5d metals Hf, Ta, Re, Os, Ir, Pt, Au and 6p metals Tl, Pb, Bi. We demonstrate that it is feasible to enhance PMA by using proper capping materials. Relatively large PMA is found in the structures with capping materials of Hf, Ta, Os, Ir and Pb. More importantly, the MgO/CoFe/Bi structure gives rise to giant PMA (6.09 mJ/m2), which is about three times larger than that of the MgO/CoFe/Ta structure. The origin of the MAE is elucidated by examining the contributions to MAE from each atomic layer and orbital. These findings provide a comprehensive understanding of the PMA and point towards the possibility to achieve advanced-node STT-MRAM with high thermal stability.Comment: 15 pages with 4 figure