Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].</p

The utility of the Historical Clinical Risk -20 Scale as a predictor of outcomes in decisions to transfer patients from high to lower levels of security-A UK perspective

<p>Abstract</p> <p>Background</p> <p>Structured Professional Judgment (SPJ) approaches to violence risk assessment are increasingly being adopted into clinical practice in international forensic settings. The aim of this study was to examine the predictive validity of the Historical Clinical Risk -20 (HCR-20) violence risk assessment scale for outcome following transfers from high to medium security in a United Kingdom setting.</p> <p>Methods</p> <p>The sample was predominately male and mentally ill and the majority of cases were detained under the criminal section of the Mental Health Act (1986). The HCR-20 was rated based on detailed case file information on 72 cases transferred from high to medium security. Outcomes were examined, independent of risk score, and cases were classed as "success or failure" based on established criteria.</p> <p>Results</p> <p>The mean length of follow up was 6 years. The total HCR-20 score was a robust predictor of failure at lower levels of security and return to high security. The Clinical and Risk management items contributed most to predictive accuracy.</p> <p>Conclusions</p> <p>Although the HCR-20 was designed as a violence risk prediction tool our findings suggest it has potential utility in decisions to transfer patients from high to lower levels of security.</p

Spin relaxation in GaAs/AlxGa1-xAs quantum wells

Spin dynamics of photoexcited carriers in GaAs/AlxGa1-xAs quantum wells have been investigated in a wafer containing twelve different single quantum wells, allowing full investigation of well-width and temperature dependences with minimal accidental variations due to growth conditions. The behavior at low temperatures is dominated by excitonic effects, confirming results described in detail by others. Between 50 and 90 K there is a transition from excitonic to free-carrier-dominated behavior; both the temperature and time scale of the transition are in excellent agreement with a theoretical model for exciton dissociation. Above 90 K we find two-component spin decays consisting of an unresolved component (faster than 2 ps) associated with exciton dissociation and hole spin-relaxation and a longer-lived component that yields the electron spin-relaxation time. In the free-carrier regime, the electron spin-relaxation rate in wide wells follows that for bulk GaAs, which varies approximately as T2. For narrow wells the rate is approximately independent of temperature and varies quadratically with confinement energy. This behavior is consistent with dominance of the D'yakonov-Perel mechanism of electron-spin relaxation and the expected behavior of the electron mobility. The data show evidence of the influence of electron scattering by interface roughness

Unpicking the Threads: Facebook, Peer Learning and the Professional Doctorate

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