Ageing and relaxation times in disordered insulators

We focus on the slow relaxations observed in the conductance of disordered insulators at low temperature (especially granular aluminum films). They manifest themselves as a temporal logarithmic decrease of the conductance after a quench from high temperatures and the concomitant appearance of a field effect anomaly centered on the gate voltage maintained. We are first interested in ageing effects, i.e. the age dependence of the dynamical properties of the system. We stress that the formation of a second field effect anomaly at a different gate voltage is not a "history free" logarithmic (lnt) process, but departs from lnt in a way which encodes the system's age. The apparent relaxation time distribution extracted from the observed relaxations is thus not "constant" but evolves with time. We discuss what defines the age of the system and what external perturbation out of equilibrium does or does not rejuvenate it. We further discuss the problem of relaxation times and comment on the commonly used "two dip" experimental protocol aimed at extracting "characteristic times" for the glassy systems (granular aluminum, doped indium oxide...). We show that it is inoperable for systems like granular Al and probably highly doped InOx where it provides a trivial value only determined by the experimental protocol. But in cases where different values are obtained like in lightly doped InOx or some ultra thin metal films, potentially interesting information can be obtained, possibly about the "short time" dynamics of the different systems. Present ideas about the effect of doping on the glassiness of disordered insulators may also have to be reconsidered.Comment: to appear in the proceedings of the 14th International Conference on Transport and Interactions in Disordered Systems (TIDS14

Charging of highly resistive granular metal films

We have used the Scanning Kelvin probe microscopy technique to monitor the charging process of highly resistive granular thin films. The sample is connected to two leads and is separated by an insulator layer from a gate electrode. When a gate voltage is applied, charges enter from the leads and rearrange across the sample. We find very slow processes with characteristic charging times exponentially distributed over a wide range of values, resulting in a logarithmic relaxation to equilibrium. After the gate voltage has been switched off, the system again relaxes logarithmically slowly to the new equilibrium. The results cannot be explained with diffusion models, but most of them can be understood with a hopping percolation model, in which the localization length is shorter than the typical site separation. The technique is very promising for the study of slow phenomena in highly resistive systems and will be able to estimate the conductance of these systems when direct macroscopic measurement techniques are not sensitive enough.Comment: 8 pages, 7 figure

Spin injection in Silicon at zero magnetic field

In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electrons spin polarization is then analysed through the circular polarization of emitted light. All the light polarization measurements are performed without an external applied magnetic field \textit{i.e.} in remanent magnetic states. The light polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the Co/Pt injector. We could achieve a circular polarization degree of the emitted light of 3 % at 5 K. Moreover this light polarization remains almost constant at least up to 200 K.Comment: accepted in AP

Manifestation of ageing in the low temperature conductance of disordered insulators

We are interested in the out of equilibrium phenomena observed in the electrical conductance of disordered insulators at low temperature, which may be signatures of the electron coulomb glass state. The present work is devoted to the occurrence of ageing, a benchmark phenomenon for the glassy state. It is the fact that the dynamical properties of a glass depend on its age, i.e. on the time elapsed since it was quench-cooled. We first critically analyse previous studies on disordered insulators and question their interpretation in terms of ageing. We then present new measurements on insulating granular aluminium thin films which demonstrate that the dynamics is indeed age dependent. We also show that the results of different relaxation protocols are related by a superposition principle. The implications of our findings for the mechanism of the conductance slow relaxations are then discussed

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Growth of GaInTlAs layers on InP by molecular beam epitaxy

International audienceGrowth of GaInTlAs alloys on InP001 has been attempted by solid source molecular beam epitaxy. Thallium incorporation into Ga 1x In x As matrices was studied as a function of substrate temperature, arsenic overpressure, matrix composition, and growth rate. At high temperatures 350 °C thallium evaporates, whereas at intermediary temperatures 270-350 °C thallium segregates into droplets on the surface. Only in the low temperature range 180-260 °C can thallium be incorporated in some conditions, leading to mirror-like surfaces. Up to 18% Tl content was incorporated into a Ga 0.70 In 0.30 As matrix and up to 40% Tl into a GaAs matrix. For these high Tl concentrations, Tl droplets are avoided and Tl incorporation is achieved only when using high arsenic pressures. However, this limits surface adatom diffusion and leads to amorphous, polycrystalline, or twinned materials. Finally, a narrow window for single-crystal growth has been found for low Tl contents 4% using optimized growth conditions with low V/III pressure ratios and high growth rates

Parallel-plate Flow Chamber and Continuous Flow Circuit to Evaluate Endothelial Progenitor Cells under Laminar Flow Shear Stress

The overall goal of this method is to describe a technique to subject adherent cells to laminar flow conditions and evaluate their response to well quantifiable fluid shear stresses1. Our flow chamber design and flow circuit (Fig. 1) contains a transparent viewing region that enables testing of cell adhesion and imaging of cell morphology immediately before flow (Fig. 11A, B), at various time points during flow (Fig. 11C), and after flow (Fig. 11D). These experiments are illustrated with human umbilical cord blood-derived endothelial progenitor cells (EPCs) and porcine EPCs2,3. This method is also applicable to other adherent cell types, e.g. smooth muscle cells (SMCs) or fibroblasts. The chamber and all parts of the circuit are easily sterilized with steam autoclaving In contrast to other chambers, e.g. microfluidic chambers, large numbers of cells (> 1 million depending on cell size) can be recovered after the flow experiment under sterile conditions for cell culture or other experiments, e.g. DNA or RNA extraction, or immunohistochemistry (Fig. 11E), or scanning electron microscopy5. The shear stress can be adjusted by varying the flow rate of the perfusate, the fluid viscosity, or the channel height and width. The latter can reduce fluid volume or cell needs while ensuring that one-dimensional flow is maintained. It is not necessary to measure chamber height between experiments, since the chamber height does not depend on the use of gaskets, which greatly increases the ease of multiple experiments. Furthermore, the circuit design easily enables the collection of perfusate samples for analysis and/or quantification of metabolites secreted by cells under fluid shear stress exposure, e.g. nitric oxide (Fig. 12)6

Do drugs interact together in cardiovascular prevention? A meta-analysis of powerful or factorial randomized controlled trials.

To explore whether preventive cardiovascular drugs (antihypertensive, antiplatelet, lipid lowering and hypoglycemic agents) interact together in cardiovascular prevention. We searched PubMed®, Web of science™, Embase and Cochrane library for powerful randomized placebo-controlled trials (>1000 patients). We explored whether drug effect on major vascular events changed according to cross-exposure to other drug classes or to cardiovascular risk factors (hypertension or type 2 diabetes), through a meta-analysis of relative odds ratio computed by trial subgroups. A significant interaction was suggested from confidence intervals of the ratio of odds ratios, when they excluded neutral value of 1. In total, 14 trials with 178,398 patients were included. No significant interaction was observed between co-prescribed drugs or between these medications and type 2 diabetes/hypertension status. Our meta-analysis is the first one to evaluate drug-drug and drug-hypertension/type 2 diabetes status interactions in terms of cardiovascular risks: we did not observe any significant interaction. This indirectly reinforces the rationale of using several contrasted mechanisms to address cardiovascular prevention; and allows the combination effect prediction by a simple multiplication of their odds ratios. The limited availability of data reported or obtained from authors is a strong argument in favor of data sharing

Polarization sensitive silicon photodiodes using nanostructured metallic grids

In this paper, we present the design, fabrication, and characterization of wire grid polarizers. These polarizers show high extinction ratios and high transmission with structure dimensions that are compatible with current complementary metal-oxide-semiconductor (CMOS) technology. To design these wire grids, we first analyze the transmission properties of single apertures. From the understanding of a single aperture, we apply a modal expansion method to model wire grids. The most promising grids are fabricated on both a glass substrate and CMOS photodiode. An extinction ratio higher than 200 is measured