36 research outputs found
Are pinholes the cause of excess current in superconducting tunnel junctions? A study of Andreev current in highly resistive junctions
In highly resistive superconducting tunnel junctions, excess subgap current
is usually observed and is often attributed to microscopic "pinholes" in the
tunnel barrier. We have studied the subgap current in
superconductor-insulator-superconductor (SIS) and
superconductor-insulator-normal-metal (SIN) junctions. In Al/AlOx/Al junctions,
we observed a decrease of 2 orders of magnitude in the current upon the
transition from the SIS to the SIN regime, where it then matched theory. In
Al/AlOx/Cu junctions, we also observed generic features of coherent diffusive
Andreev transport in a junction with a homogenous barrier. We use the
quasiclassical Keldysh-Green function theory to quantify single- and
two-particle tunneling and find good agreement over 2 orders of magnitude in
transparency. We argue that our observations rule out pinholes as the origin of
the excess current.Comment: 4 pages, 4 figure
Evidence for a Nodeless Gap from the Superfluid Density of Optimally Doped Pr_{1.855}Ce_{0.145}CuO_{4-y} Films
We present measurements of the ab-plane magnetic penetration depth,
\lambda(T), in five optimally doped Pr_{1.855}Ce_{0.145}CuO_{4-y} films for 1.6
K \leq T \leq T_c \sim 24 K. Low resistivities, high superfluid densities
n_s(T)\propto \lambda^{-2}(T), high T_c's, and small transition widths are
reproducible and indicative of excellent film quality. For all five films,
\lambda^{-2}(T)/\lambda^{-2}(0) at low T is well fitted by an exponential
temperature dependence with a gap, \Delta_{min}, of 0.85 k_B T_c. This behavior
is consistent with a nodeless gap and is incompatible with d-wave
superconductivity.Comment: 5 pages, 4 figures, reorganized for clarit
Hot-spot Identification: a Categorical Binary Model Approach
This paper presents an alternative methodology for hot-spot identification based on a probabilistic model. In this methodology, the ranking criterion for hot-spot identification conveys the probability of a site being a hot-spot or a non-hot spot. A binary choice model was used to link the outcome to a set of factors that characterize the risk of the sites under analysis based on our use of two categories (0/1) for the dependent variable. The proposed methodology consists of two main steps. First, a threshold value for the number of accidents is set to distinguish hot spots from safe sites (category 1 or 0, respectively). Based on this classification, a binary model is applied that allows the construction of an ordered site list using the probability of a site being a hot-spot. The second step involves the choice of a selection strategy. The selection strategy can target a fixed number of sites with the greatest probability or, alternatively, all sites exceeding a specific probability, such as 0.5. A demonstration of the proposed methodology is provided using simulated data. For the simulation design, urban intersection data from Porto, Portugal, covering a five-year period were used. The results of the binary model showed a good fit. To evaluate and compare the probabilistic method with other commonly used methods, measures were used to test the performance of each method in terms of its power to detect the "true" hot spots. The test results indicate that the proposed method is superior to two commonly used methods. The gains of using this method are related to the simplicity of its application, while critical issues such as prior distribution effect assumptions and the regression-to-the-mean phenomenon are overcome. Further, the proposed model provides a realistic and intuitive perspective and supports easy practical application
Identification of crash hotspots using kernel density estimation and kriging methods: a comparison
Electron pairing in the pseudogap state revealed by shot noise in copper oxide junctions
In the quest to understand high-temperature superconductivity in copper oxides, debate has been focused on the pseudogap—a partial energy gap that opens over portions of the Fermi surface in the ‘normal’ state above the bulk critical temperature. The pseudogap has been attributed to precursor superconductivity, to the existence of preformed pairs and to competing orders such as charge-density waves. A direct determination of the charge of carriers as a function of temperature and bias could help resolve among these alternatives. Here we report measurements of the shot noise of tunnelling current in high-quality La_(2−x)Sr)xCuO)4/La)2CuO)4/La_(2−x)Sr)xCuO)4 (LSCO/LCO/LSCO) heterostructures fabricated using atomic layer-by-layer molecular beam epitaxy at several doping levels. The data delineate three distinct regions in the bias voltage–temperature space. Well outside the superconducting gap region, the shot noise agrees quantitatively with independent tunnelling of individual charge carriers. Deep within the superconducting gap, shot noise is greatly enhanced, reminiscent of multiple Andreev reflections. Above the critical temperature and extending to biases much larger than the superconducting gap, there is a broad region in which the noise substantially exceeds theoretical expectations for single-charge tunnelling, indicating pairing of charge carriers. These pairs are detectable deep into the pseudogap region of temperature and bias. The presence of these pairs constrains current models of the pseudogap and broken symmetry states, while phase fluctuations limit the domain of superconductivity