Probing the Electrostatics of Integer Quantum Hall Edges with Momentum-Resolved Tunnel Spectroscopy

We present measurements of momentum-resolved magneto-tunneling from a perpendicular two-dimensional (2D) contact into integer quantum Hall (QH) edges at a sharp edge potential created by cleaved edge overgrowth. Resonances in the tunnel conductance correspond to coincidences of electronic states of the QH edge and the 2D contact in energy-momentum space. With this dispersion relation reflecting the potential distribution at the edge we can directly measure the band bending at our cleaved edge under the influence of an external voltage bias. At finite bias we observe significant deviations from the flat-band condition in agreement with self-consistent calculations of the edge potential

Novel metallic and insulating states at a bent quantum Hall junction

A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.Comment: 5 pages, 4 figures, text + figs revised for clarit

Corner overgrowth: Bending a high mobility two-dimensional electron system by 90 degrees

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAs/AlGaAs heterojunction overgrown on top of an ex-situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp $90^{\rm o}$ angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Schroedinger-Poisson calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of new embedded quantum heterostructures.Comment: 3 pages, 4 figures, latest version accepted to AP

The structure of a single sharp quantum Hall edge probed by momentum-resolved tunneling

Momentum resolved magneto-tunnelling spectroscopy is performed at a single sharp quantum Hall edge. We directly probe the structure of individual integer quantum Hall (QH) edge modes, and find that an epitaxially overgrown cleaved edge realizes the sharp edge limit, where the Chklovskii picture relevant for soft etched or gated edges is no longer valid. The Fermi wavevector in the probe quantum well probes the real-space position of the QH edge modes, and reveals inter-channel distances smaller than both the magnetic length and the Bohr radius. We quantitatively describe the lineshape of principal conductance peaks and deduce an edge filling factor from their position consistent with the bulk value. We observe features in the dispersion which are attributed to fluctuations in the ground energy of the quantum Hall system.Comment: 4 pages, 3 figure

Vertical quantum wire realized with double cleaved-edge overgrowth

A quantum wire is fabricated on (001)-GaAs at the intersection of two overgrown cleaves. The wire is contacted at each end to n+ GaAs layers via two-dimensional (2D) leads. A sidegate controls the density of the wire revealing conductance quantization. The step height is strongly reduced from 2e^2/h due to the 2D-lead series resistance. We characterize the 2D density and mobility for both cleave facets with four-point measurements. The density on the first facet is modulated by the substrate potential, depleting a 2um wide strip that defines the wire length. Micro-photoluminescence shows an extra peak consistent with 1D electron states at the corner.Comment: 4 pages, 4 figure

A Comparative Investigation of Tonal Memory Improvements with Electronic and Vocal Pitch Stimulus Training

The study described herein compares improvements in tonal memory for young adults (age 19- 22), specifically retention of pitches, between two groups (n1=8, n2=8) with nearly identical training programs. One group was provided electronic pitch stimuli for the training program, while the other group was given human vocal stimuli. Self-paced computerized training sessions were conducted in a soundproofed testing room and interposed between pre-test and post-test measurements. A pre-test—post-test randomized experimental design allowed for assessment of whether the training was effective for each group in addition to comparing effectiveness of training between groups. Analyses with demographic factors, particularly previous musical experience and experience with tonal languages, are also discussed. No significant improvements were found over the course of the training for either group, with averages on pre-tests and posttests falling between 35% and 36% accuracy in all cases. The hypothesis that the vocal pitch stimulus group would experience greater improvements than the electronic stimulus group is not supported. No correlation between previous musical experience and baseline tonal memory assessment was found. Limitations of this research include small sample size leading to high variability in addition to the brevity of the computerized training program