63 research outputs found

    Cathodoluminescence spectroscopy of ambipolar diffusion in (Al,Ga)As barriers and capture of nonequilibrium carriers in GaAs quantum well

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    Ambipolar vertical diffusion of carriers generated in an Al0.3Ga0.7As barrier is investigated by cathodoluminescence CL spectroscopy in a system containing a sequence of GaAs-based quantum wells QWs . The intensity distribution of the CL line scan exhibits a single exponential decay for the first QW of the sequence, reflecting a pure diffusion-limited transport. However, the CL line scans of the second, third, and fourth QWs are governed by diffusion only for large separations between the electron beam and the corresponding QW. For smaller distances, the CL intensity distribution is significantly influenced by the carrier capture into the intervening QWs

    Narrow-band photodetection based on M-plane GaN films

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    Rapid identification of a range of hazardous airborne biological and chemical agents requires simultaneous detection at several specific wavelengths, and consequently a set of photodetectors with very narrow-band spectral responsivity. We demonstrate two ultraviolet photodetection configurations based on strained M-plane GaN films on LiAlO2(100) substrates grown by molecular-beam epitaxy with a detection bandwidth below 8 nm. The optical band gap of the film depends on the orientation of the linear polarization of the incident light relative to the c-axis of GaN, which lies in the film plane. The first configuration consists of a polarizationsensitive planar Schottky photodetector and a filter. An orthogonal alignment of the c-axis of the photodetector and the filter produces a detection system with a peak responsivity at 360 nm and a bandwidth of 6 nm. The second one consists of two planar Schottky photodetectors with their c-axes oriented perpendicular to each other. The difference signal between the two photodetectors produces a peak responsivity at 358 nm and a bandwidth of 7.3 nm

    High-spectral-resolution terahertz imaging with a quantum-cascade laser

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    We report on a high-spectral-resolution terahertz imaging system operating with a multi-mode quantum-cascade laser (QCL), a fast scanning mirror, and a sensitive Ge:Ga detector. By tuning the frequency of the QCL, several spectra can be recorded in 1.5 s during the scan through a gas cell filled with methanol (CH3OH). These experiments yield information about the local absorption and the linewidth. Measurements with a faster frame rate of up to 3 Hz allow for the dynamic observation of CH3OH gas leaking from a terahertz-transparent tube into the evacuated cell. In addition to the relative absorption, the local pressure is mapped by exploiting the effect of pressure broadening

    Nonlinear stochastic discrete drift-diffusion theory of charge fluctuations and domain relocation times in semiconductor superlattices

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    A stochastic discrete drift-diffusion model is proposed to account for the effects of shot noise in weakly coupled, highly doped semiconductor superlattices. Their current-voltage characteristics consist of a number stable multistable branches corresponding to electric field profiles displaying two domains separated by a domain wall. If the initial state corresponds to a voltage on the middle of a stable branch and a sudden voltage is switched so that the final voltage corresponds to the next branch, the domains relocate after a certain delay time. Shot noise causes the distribution of delay times to change from a Gaussian to a first passage time distribution as the final voltage approaches that of the end of the first current branch. These results agree qualitatively with experiments by Rogozia {\it et al} (Phys. Rev. B {\bf 64}, 041308(R) (2001)).Comment: 9 pages, 12 figures, 2 column forma
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