618 research outputs found
Disentangling surface and bulk transport in topological-insulator - junctions
By combining -type and -type
topological insulators, vertically stacked - junctions can be formed,
allowing to position the Fermi level into the bulk band gap and also tune
between - and -type surface carriers. Here we use low-temperature
magnetotransport measurements to probe the surface and bulk transport modes in
a range of vertical heterostructures with varying
relative thicknesses of the top and bottom layers. With increasing thickness of
the layer we observe a change from - to -type
behavior via a specific thickness where the Hall signal is immeasurable.
Assuming that the the bulk and surface states contribute in parallel, we can
calculate and reproduce the dependence of the Hall and longitudinal components
of resistivity on the film thickness. This highlights the role played by the
bulk conduction channels which, importantly, cannot be probed using surface
sensitive spectroscopic techniques. Our calculations are then buttressed by a
semi-classical Boltzmann transport theory which rigorously shows the vanishing
of the Hall signal. Our results provide crucial experimental and theoretical
insights into the relative roles of the surface and bulk in the vertical
topological - junctions.Comment: 11 pages, 5 figure
Avaliação de danos de Sitophilus zeamais em pomares de pessegueiro.
O objetivo do trabalho foi avaliar o potencial de danos causados por S. zeamais em pêssego
Single hole transistor in a p-Si/SiGe quantum well
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying
voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing
the etched semiconductor surface and the mesa walls before evaporation of the
top gates. Pronounced Coulomb blockade effects are observed at small coupling
of the transistor island to source and drain.Comment: 3 pages, 3 figure
Spin-orbit coupling and phase-coherence in InAs nanowires
We investigated the magnetotransport of InAs nanowires grown by selective
area metal-organic vapor phase epitaxy. In the temperature range between 0.5
and 30 K reproducible fluctuations in the conductance upon variation of the
magnetic field or the back-gate voltage are observed, which are attributed to
electron interference effects in small disordered conductors. From the
correlation field of the magnetoconductance fluctuations the phase-coherence
length l_phi is determined. At the lowest temperatures l_phi is found to be at
least 300 nm, while for temperatures exceeding 2 K a monotonous decrease of
l_phi with temperature is observed. A direct observation of the weak
antilocalization effect indicating the presence of spin-orbit coupling is
masked by the strong magnetoconductance fluctuations. However, by averaging the
magnetoconductance over a range of gate voltages a clear peak in the
magnetoconductance due to the weak antilocalization effect was resolved. By
comparison of the experimental data to simulations based on a recursive
two-dimensional Green's function approach a spin-orbit scattering length of
approximately 70 nm was extracted, indicating the presence of strong spin-orbit
coupling.Comment: 8 pages, 7 figure
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