On the homogeneity region, growth modes and optoelectronic properties of chalcopyrite type CuInS2

Studying the pseudo binary phase diagrams Cu2S In2S3 and CuS InS in the ternary system Cu In S showed that the CuInS2 compound semiconductor exhibits a melting point at T 1093 3 C and a homogeneity region at room temperature ranging from 2 mole in In2S3 to 1.5 mole in CuS direction. This material, which crystallizes in the chalcopyrite type structure, occurs in nature as mineral roqu site. Investigating the influence of inert gas pressure on the crystallization of a stoichiometric melt, a disproportionation of the crystallized material into a Cu2S rich bulk material of composition Cu1.06In0.98S2 epitaxially intergrown with 1.5 m thick lamellae of the thiospinel phase CuIn5S8 was observed. Structure and composition of the bulk material were characterized applying Scanning Auger SAM and Scanning Electron Microscopy SEM as well as Differential Thermal Analysis DTA and X Ray Diffractometry XRD . In photoluminescence measurements PL , Cu rich bulk material is distinguished by sharp emission lines representing excitons close to the band to band transition at 1.55 eV and a broadband emission in the range from 1.3 to 1.45 eV. Exciton peaks of highest intensity were found at a Cu In ratio 1.0524. Investigating the spectral response of thin film chalcopyrite solar cells a significant change of the optical gap from 1.45 eV for a Cu rich to 1.37 eV of an In rich absorber layer was observed. The results show that the homogeneity region of the material can be varied in the percentage range. A shift of the optical band gap can be influenced by stoichiometry at sulphur at metal and the crystallization conditions of the adamantine type structur