On Properties of the Isoscalar Giant Dipole Resonance

Main properties (strength function, energy-dependent transition density, branching ratios for direct nucleon decay) of the isoscalar giant dipole resonance in several medium-heavy mass spherical nuclei are described within a continuum-RPA approach, taking into account the smearing effect. All model parameters used in the calculations are taken from independent data. Calculation results are compared with available experimental data.Comment: 12 pages, 2 figure

Vibrational Instability due to Coherent Tunneling of Electrons

Effects of a coupling between the mechanical vibrations of a quantum dot placed between the two leads of a single electron transistor and coherent tunneling of electrons through a single level in the dot has been studied. We have found that for bias voltages exceeding a certain critical value a dynamical instability occurs and mechanical vibrations of the dot develop into a stable limit cycle. The current-voltage characteristics for such a transistor were calculated and they seem to be in a reasonably good agreement with recent experimental results for the single $C_{60}$-molecule transistor by Park et al.(Nature {\bf 407,} (2000) 57).Comment: 5 pages, 3 figure

Superconducting single-mode contact as a microwave-activated quantum interferometer

The dynamics of a superconducting quantum point contact biased at subgap voltages is shown to be strongly affected by a microwave electromagnetic field. Interference among a sequence of temporally localized, microwave-induced Landau-Zener transitions between current carrying Andreev levels results in energy absorption and in an increase of the subgap current by several orders of magnitude. The contact is an interferometer in the sense that the current is an oscillatory function of the inverse bias voltage. Possible applications to Andreev-level spectroscopy and microwave detection are discussed

Quantum Theory of Magnetoelectromotive Instability in Nanoelectromechanical Systems with Positive Differential Conductance

We consider dc-electronic transport through a nanowire suspended between two normal-metal leads in the presence of an external magnetic field. We show the very mechanism through which such a system, whose stationary current-voltage characteristic is essentially characterized by positive differential conductance, becomes unstable with respect to an onset of self-excited oscillations in electrical transport and mechanical vibrations. The self-excitation mechanism is based on the correlation between the occupancy of the quantized spin-split electronic energy levels inside the nanowire and the velocity of the nanowire with the crucial influence of strong enough retardation effects in magnetomotive coupling coming from mechanical vibrations

Electromechanics of charge shuttling in dissipative nanostructures

We investigate the current-voltage (IV) characteristics of a model single-electron transistor where mechanical motion, subject to strong dissipation, of a small metallic grain is possible. The system is studied both by using Monte Carlo simulations and by using an analytical approach. We show that electromechanical coupling results in a highly nonlinear IV-curve. For voltages above the Coulomb blockade threshold, two distinct regimes of charge transfer occur: At low voltages the system behave as a static asymmetric double junction and tunneling is the dominating charge transfer mechanism. At higher voltages an abrupt transition to a new shuttle regime appears, where the grain performs an oscillatory motion back and forth between the leads. In this regime the current is mainly mediated by charges that are carried on the grain as it moves from one lead to the other.Comment: 8 pages, 10 figures, final version to be published in PR

Incoherent dynamics of vibrating single-molecule transistors

We study the tunneling conductance of nano-scale quantum ``shuttles'' in connection with a recent experiment (H. Park et al., Nature, 407, 57 (2000)) in which a vibrating C^60 molecule was apparently functioning as the island of a single electron transistor (SET). While our calculation starts from the same model of previous work (D. Boese and H. Schoeller, Europhys. Lett. 54, 66(2001)) we obtain quantitatively different dynamics. Calculated I-V curves exhibit most features present in experimental data with a physically reasonable parameter set, and point to a strong dependence of the oscillator's potential on the electrostatics of the island region. We propose that in a regime where the electric field due to the bias voltage itself affects island position, a "catastrophic" negative differential conductance (NDC) may be realized. This effect is directly attributable to the magnitude of overlap of final and initial quantum oscillator states, and as such represents experimental control over quantum transitions of the oscillator via the macroscopically controllable bias voltage.Comment: 6 pages, LaTex, 6 figure