Finding Approximate POMDP solutions Through Belief Compression

Standard value function approaches to finding policies for Partially Observable Markov Decision Processes (POMDPs) are generally considered to be intractable for large models. The intractability of these algorithms is to a large extent a consequence of computing an exact, optimal policy over the entire belief space. However, in real-world POMDP problems, computing the optimal policy for the full belief space is often unnecessary for good control even for problems with complicated policy classes. The beliefs experienced by the controller often lie near a structured, low-dimensional subspace embedded in the high-dimensional belief space. Finding a good approximation to the optimal value function for only this subspace can be much easier than computing the full value function. We introduce a new method for solving large-scale POMDPs by reducing the dimensionality of the belief space. We use Exponential family Principal Components Analysis (Collins, Dasgupta and Schapire, 2002) to represent sparse, high-dimensional belief spaces using small sets of learned features of the belief state. We then plan only in terms of the low-dimensional belief features. By planning in this low-dimensional space, we can find policies for POMDP models that are orders of magnitude larger than models that can be handled by conventional techniques. We demonstrate the use of this algorithm on a synthetic problem and on mobile robot navigation tasks

First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT) with Lch of 50nm - 110nm and fin width (WFin) of 30nm - 50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs.Comment: IEEE IEDM 2011 pp. 769-772; Structures are valuable for low-dimensional physics stud

Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays

Carbon nanotube field-effect transistors with structures and properties near the scaling limit with short (down to 50 nm) channels, self aligned geometries, palladium electrodes with low contact resistance and high-k dielectric gate insulators are realized. Electrical transport in these miniature transistors is near ballistic up to high biases at both room and low temperatures. Atomic layer deposited (ALD) high-k films interact with nanotube sidewalls via van der Waals interactions without causing weak localization at 4 K. New fundamental understanding of ballistic transport, optical phonon scattering and potential interfacial scattering mechanisms in nanotubes are obtained.Comment: Nano Letters, in pres

Determination of energy barrier profiles for high-k dielectric materials utilizing bias-dependent internal photoemission

We utilize bias-dependent internal photoemission spectroscopy to determine the metal/dielectric/silicon energy barrier profiles for Au/HfO2/Si and Au/Al2O3/Si structures. The results indicate that the applied voltage plays a large role in determining the effective barrier height and we attribute much of the variation in this case to image potential barrier lowering in measurements of single layers. By measuring current at both positive and negative voltages, we are able to measure the band offsets from Si and also to determine the flatband voltage and the barrier asymmetry at 0 V. Our SiO2 calibration sample yielded a conduction band offset value of 3.03+/-0.1 eV. Measurements on HfO2 give a conduction band offset value of 2.7+/-0.2 eV (at 1.0 V) and Al2O3 gives an offset of 3.3+/-0.1 (at 1.0 V). We believe that interfacial SiO2 layers may dominate the electron transport from silicon for these films. The Au/HfO2 barrier height was found to be 3.6+/-0.1 eV while the Au/Al2O3 barrier is 3.5+/-0.1 eV

Duration judgements in patients with schizophrenia

Background. The ability to encode time cues underlies many cognitive processes. In the light of schizophrenic patients' compromised cognitive abilities in a variety of domains, it is noteworthy that there are numerous reports of these patients displaying impaired timing abilities. However, the timing intervals that patients have been evaluated on in prior studies vary considerably in magnitude (e.g. 1 s, 1 min, 1 h etc.). Method. In order to obviate differences in abilities in chronometric counting and place minimal demands on cognitive processing, we chose tasks that involve making judgements about brief durations of time (<1 s). Results. On a temporal generalization task, patients were less accurate than controls at recognizing a standard duration. The performance of patients was also significantly different from controls on a temporal bisection task, in which participants categorized durations as short or long. Although time estimation may be closely intertwined with working memory, patients' working memory as measured by the digit span task did not correlate significantly with their performance on the duration judgement tasks. Moreover, lowered intelligence scores could not completely account for the findings. Conclusions. We take these results to suggest that patients with schizophrenia are less accurate at estimating brief time periods. These deficits may reflect dysfunction of biopsychological timing processes

Density perturbations in the brane-world

In Randall-Sundrum-type brane-world cosmologies, density perturbations generate Weyl curvature in the bulk, which in turn backreacts on the brane via stress-energy perturbations. On large scales, the perturbation equations contain a closed system on the brane, which may be solved without solving for the bulk perturbations. Bulk effects produce a non-adiabatic mode, even when the matter perturbations are adiabatic, and alter the background dynamics. As a consequence, the standard evolution of large-scale fluctuations in general relativity is modified. The metric perturbation on large-scales is not constant during high-energy inflation. It is constant during the radiation era, except at most during the very beginning, if the energy is high enough.Comment: Additional arguments and minor corrections; version accepted by Phys. Rev.

Long-Term Stability of Ferri-/Ferrocyanide as an Electroactive Component for Redox Flow Battery Applications: On the Origin of Apparent Capacity Fade

We assess the suitability of potassium ferri-/ferrocyanide as an electroactive species for long-term utilization in aqueous organic redox flow batteries. A series of electrochemical and chemical characterization experiments was performed to distinguish between structural decomposition and apparent capacity fade of ferri-/ferrocyanide solutions used in the capacity-limiting side of a flow battery. Our results indicate that, in contrast with previous reports, no structural decomposition of ferri-/ferrocyanide occurs at tested pH values as high as 14 in the dark or in diffuse indoor light. Instead, an apparent capacity fade takes place due to a chemical reduction of ferricyanide to ferrocyanide, via chemical oxygen evolution reaction. We find that this parasitic process can be further exacerbated by carbon electrodes, with apparent capacity fade rates at pH 14 increasing with an increased ratio of carbon electrode surface area to ferricyanide in solution. Based on these results, we report a set of operating conditions that enables the long-duration cycling of alkaline ferri-/ferrocyanide electrolytes and demonstrate how apparent capacity fade rates can be engineered by the initial system setup. If protected from direct exposure to light, the structural stability of ferri-/ferrocyanide anions allows for their practical deployment as electroactive species in long duration energy storage applications. © 2023 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited

Anisotropy dissipation in brane-world inflation

We examine the behavior of an anisotropic brane-world in the presence of inflationary scalar fields. We show that, contrary to naive expectations, a large anisotropy does not adversely affect inflation. On the contrary, a large initial anisotropy introduces more damping into the scalar field equation of motion, resulting in greater inflation. The rapid decay of anisotropy in the brane-world significantly increases the class of initial conditions from which the observed universe could have originated. This generalizes a similar result in general relativity. A unique feature of Bianchi I brane-world cosmology appears to be that for scalar fields with a large kinetic term the initial expansion of the universe is quasi-isotropic. The universe grows more anisotropic during an intermediate transient regime until anisotropy finally disappears during inflationary expansion.Comment: 6 pages, 5 figures; minor typo corrected in Eq. (16); matches version to appear in Phy Rev