The first inversion-mode gate-all-around (GAA) III-V MOSFETs are
experimentally demonstrated with a high mobility In0.53Ga0.47As channel and
atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A
well-controlled InGaAs nanowire release process and a novel ALD high-k/metal
gate process has been developed to enable the fabrication of III-V GAA MOSFETs.
Well-behaved on-state and off-state performance has been achieved with channel
length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT)
with Lch of 50nm - 110nm and fin width (WFin) of 30nm - 50nm are carried out,
showing the immunity to short channel effects with the advanced 3D structure.
The GAA structure has provided a viable path towards ultimate scaling of III-V
MOSFETs.Comment: IEEE IEDM 2011 pp. 769-772; Structures are valuable for
low-dimensional physics stud
