Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.Comment: Review article, to appear in Journal of Computational and Theoretical Nanoscienc

Cancelled - The Ontological Status of Cartesian Possibilia

In this paper I present a novel view of the ontological status of possible objects for Descartes. Specifically, I claim that possible objects just are innate ideas considered objectively. In the act of creation, God creates possibilities—in all its richness—in the form of innate ideas. Thus, in acts of thinking, one may clearly and distinctly perceive, via one’s innate ideas, that such and such is possible. To argue this, I first analyze and critique two competing views—one from Calvin Normore who claims that innate ideas represent an independent realm of possibilia, and another from David Cunning and Alan Nelson who claim that Descartes had no theory of modality. I then move on to the defense of my view, both giving a positive account of my argument and noting how my interpretation enjoys certain advantages over my interlocutors

Reduced carrier cooling and thermalization in semiconductor quantum wires

By using a Monte Carlo analysis of the carrier relaxation in GaAs quantum wires following laser photoexcitation, we show that carrier cooling due to phonon emission and internal thermalization due to electron-electron interaction are significantly decreased with respect to bulk systems. This decreased thermalization is mainly attributed to the reduced efficiency of intersubband processes and to the reduced effect of electron-electron intrasubband scattering

Heating Effects in Nanoscale Devices

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