Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems

Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.Comment: Review article, to appear in Journal of Computational and Theoretical Nanoscienc

Electron Transport in Silicon Nanowires: The Role of Acoustic Phonon Confinement and Surface Roughness Scattering

We investigate the effects of electron and acoustic-phonon confinement on the low-field electron mobility of thin square silicon nanowires (SiNWs) that are surrounded by SiO$_2$ and gated. We employ a self-consistent Poisson-Schr\"{o}dinger-Monte Carlo solver that accounts for scattering due to acoustic phonons (confined and bulk), intervalley phonons, and the Si/SiO$_2$ surface roughness. The wires considered have cross sections between 3 $\times$ 3 nm$^2$ and 8 $\times$ 8 nm$^2$. For larger wires, as expected, the dependence of the mobility on the transverse field from the gate is pronounced. At low transverse fields, where phonon scattering dominates, scattering from confined acoustic phonons results in about a 10% decrease of the mobility with respect to the bulk phonon approximation. As the wire cross-section decreases, the electron mobility drops because the detrimental increase in both electron--acoustic phonon and electron--surface roughness scattering rates overshadows the beneficial volume inversion and subband modulation. For wires thinner than 5 $\times$ 5 nm$^2$, surface roughness scattering dominates regardless of the transverse field applied and leads to a monotonic decrease of the electron mobility with decreasing SiNWs cross section.Comment: 13 pages, 9 figures, Revte

Reduced carrier cooling and thermalization in semiconductor quantum wires

By using a Monte Carlo analysis of the carrier relaxation in GaAs quantum wires following laser photoexcitation, we show that carrier cooling due to phonon emission and internal thermalization due to electron-electron interaction are significantly decreased with respect to bulk systems. This decreased thermalization is mainly attributed to the reduced efficiency of intersubband processes and to the reduced effect of electron-electron intrasubband scattering

Emerging pharmacotherapy of tinnitus

Tinnitus, the perception of sound in the absence of an auditory stimulus, is perceived by about 1 in 10 adults, and for at least 1 in 100, tinnitus severely affects their quality of life. Because tinnitus is frequently associated with irritability, agitation, stress, insomnia, anxiety and depression, the social and economic burdens of tinnitus can be enormous. No curative treatments are available. However, tinnitus symptoms can be alleviated to some extent. The most widespread management therapies consist of auditory stimulation and cognitive behavioral treatment, aiming at improving habituation and coping strategies. Available clinical trials vary in methodological rigor and have been performed for a considerable number of different drugs. None of the investigated drugs have demonstrated providing replicable long-term reduction of tinnitus impact in the majority of patients in excess of placebo effects. Accordingly, there are no FDA or European Medicines Agency approved drugs for the treatment of tinnitus. However, in spite of the lack of evidence, a large variety of different compounds are prescribed off-label. Therefore, more effective pharmacotherapies for this huge and still growing market are desperately needed and even a drug that produces only a small but significant effect would have an enormous therapeutic impact. This review describes current and emerging pharmacotherapies with current difficulties and limitations. In addition, it provides an estimate of the tinnitus market. Finally, it describes recent advances in the tinnitus field which may help overcome obstacles faced in the pharmacological treatment of tinnitus. These include incomplete knowledge of tinnitus pathophysiology, lack of well-established animal models, heterogeneity of different forms of tinnitus, difficulties in tinnitus assessment and outcome measurement and variability in clinical trial methodology. © 2009 Informa UK Ltd.Fil: Langguth, Berthold. Universitat Regensburg; AlemaniaFil: Salvi, Richard. State University of New York; Estados UnidosFil: Elgoyhen, Ana Belen. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones en Ingeniería Genética y Biología Molecular "Dr. Héctor N. Torres"; Argentin

Coherent phenomena in semiconductors

A review of coherent phenomena in photoexcited semiconductors is presented. In particular, two classes of phenomena are considered: On the one hand the role played by optically-induced phase coherence in the ultrafast spectroscopy of semiconductors; On the other hand the Coulomb-induced effects on the coherent optical response of low-dimensional structures. All the phenomena discussed in the paper are analyzed in terms of a theoretical framework based on the density-matrix formalism. Due to its generality, this quantum-kinetic approach allows a realistic description of coherent as well as incoherent, i.e. phase-breaking, processes, thus providing quantitative information on the coupled ---coherent vs. incoherent--- carrier dynamics in photoexcited semiconductors. The primary goal of the paper is to discuss the concept of quantum-mechanical phase coherence as well as its relevance and implications on semiconductor physics and technology. In particular, we will discuss the dominant role played by optically induced phase coherence on the process of carrier photogeneration and relaxation in bulk systems. We will then review typical field-induced coherent phenomena in semiconductor superlattices such as Bloch oscillations and Wannier-Stark localization. Finally, we will discuss the dominant role played by Coulomb correlation on the linear and non-linear optical spectra of realistic quantum-wire structures.Comment: Topical review in Semiconductor Science and Technology (in press) (Some of the figures are not available in electronic form

Calculation of Optical Response Functions of Dilute-N GaPAsN Lattice-matched to Si

Dilute-N GaPAsN alloys have great potential for optoelectronics lattice-matched to Si. However, there is a lack of systematic calculation of the optical response of these alloys. The present paper uses the sp^3d^5s^*s_N tight-binding model to calculate the fullband electronic structure of dilute-N GaPAsN, and then calculate the optical response functions considering direct transitions within the electric dipole approximation. Good agreement is obtained for the dielectric function in comparison to available optical data for dilute nitrides. To achieve this, the sp^3d^5s^* parameters for GaP and GaAs are optimized for their optical properties in comparison to published data, which are then used as the basis for the sp^3d^5s^*s_N parameters for dilute-N GaPN and GaAsN. The calculated absorption between the valence band and the newly formed lowest conduction band of the dilute nitrides increases as the N fraction increases, in agreement with experiments, mainly due to the net increase in their coupling in the entire Brillouin zone, supported by the calculated momentum matrix element in the present work