Disorder-induced pseudodiffusive transport in graphene nanoribbons.

We study the transition from ballistic to diffusive and localized transport in graphene nanoribbons in the presence of binary disorder, which can be generated by chemical adsorbates or substitutional doping. We show that the interplay between the induced average doping (arising from the nonzero average of the disorder) and impurity scattering modifies the traditional picture of phase-coherent transport. Close to the Dirac point, intrinsic evanescent modes produced by the impurities dominate transport at short lengths giving rise to a regime analogous to pseudodiffusive transport in clean graphene, but without the requirement of heavily doped contacts. This intrinsic pseudodiffusive regime precedes the traditional ballistic, diffusive, and localized regimes. The last two regimes exhibit a strongly modified effective number of propagating modes and a mean free path which becomes anomalously large close to the Dirac point

Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor

We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$\Omega$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.Comment: revtex, 4 page

Conductance of the Single Electron Transistor for Arbitrary Tunneling Strength

We study the temperature and gate voltage dependence of the conductance of the single electron transistor focusing on highly conducting devices. Electron tunneling is treated nonperturbatively by means of path integral Monte Carlo techniques and the conductance is determined from the Kubo formula. A regularized singular value decomposition scheme is employed to calculate the conductance from imaginary time simulation data. Our findings are shown to bridge between available analytical results in the semiclassical and perturbative limits and are found to explain recent experimental results in a regime not accessible by earlier methods.Comment: 4 pages, 2 figure

Weak localization, Aharonov-Bohm oscillations and decoherence in arrays of quantum dots

Combining scattering matrix theory with non-linear $\sigma$-model and Keldysh technique we develop a unified theoretical approach enabling one to non-perturbatively study the effect of electron-electron interactions on weak localization and Aharonov-Bohm oscillations in arbitrary arrays of quantum dots. Our model embraces (i) weakly disordered conductors (ii) strongly disordered conductors and (iii) metallic quantum dots. In all these cases at $T \to 0$ the electron decoherence time is found to saturate to a finite value determined by the universal formula which agrees quantitatively with numerous experimental results. Our analysis provides overwhelming evidence in favor of electron-electron interactions as a universal mechanism for zero temperature electron decoherence in disordered conductors.Comment: 19 pages, 13 figures, invited paper, published in a special issue of Fiz. Nizk. Temp. (Kharkov) dedicated to Prof. Igor Kuli

Coulomb blockade in one-dimensional arrays of high conductance tunnel junctions

Properties of one-dimensional (1D) arrays of low Ohmic tunnel junctions (i.e. junctions with resistances comparable to, or less than, the quantum resistance $R_{\rm q}\equiv h/e^2\approx 25.8$ k$\Omega$) have been studied experimentally and theoretically. Our experimental data demonstrate that -- in agreement with previous results on single- and double-junction systems -- Coulomb blockade effects survive even in the strong tunneling regime and are still clearly visible for junction resistances as low as 1 k$\Omega$. We have developed a quasiclassical theory of electron transport in junction arrays in the strong tunneling regime. Good agreement between the predictions of this theory and the experimental data has been observed. We also show that, due to both heating effects and a relatively large correction to the linear relation between the half-width of the conductance dip around zero bias voltage, $V_{1/2}$, and the measured electronic temperature, such arrays are inferior to those conventionally used in the Coulomb Blockade Thermometry (CBT). Still, the desired correction to the half-width, $\Delta V_{1/2}$, can be determined rather easily and it is proportional to the magnitude of the conductance dip around zero bias voltage, $\Delta G$. The constant of proportionality is a function of the ratio of the junction and quantum resistances, $R/R_{\rm q}$, and it is a pure strong tunneling effect.Comment: LaTeX file + five postscript figure

Electron transport through interacting quantum dots

We present a detailed theoretical investigation of the effect of Coulomb interactions on electron transport through quantum dots and double barrier structures connected to a voltage source via an arbitrary linear impedance. Combining real time path integral techniques with the scattering matrix approach we derive the effective action and evaluate the current-voltage characteristics of quantum dots at sufficiently large conductances. Our analysis reveals a reach variety of different regimes which we specify in details for the case of chaotic quantum dots. At sufficiently low energies the interaction correction to the current depends logarithmically on temperature and voltage. We identify two different logarithmic regimes with the crossover between them occurring at energies of order of the inverse dwell time of electrons in the dot. We also analyze the frequency-dependent shot noise in chaotic quantum dots and elucidate its direct relation to interaction effects in mesoscopic electron transport.Comment: 21 pages, 4 figures. References added, discussion slightly extende

Persistent current noise and electron-electron interactions

We analyze fluctuations of persistent current (PC) produced by a charged quantum particle moving in a ring and interacting with a dissipative environment formed by diffusive electron gas. We demonstrate that in the presence of interactions such PC fluctuations persist down to zero temperature. In the case of weak interactions and/or sufficiently small values of the ring radius $R$ PC noise remains coherent and can be tuned by external magnetic flux $\Phi_x$ piercing the ring. In the opposite limit of strong interactions and/or large values of $R$ fluctuations in the electronic bath strongly suppress quantum coherence of the particle down to $T=0$ and induce incoherent $\Phi_x$-independent current noise in the ring which persists even at $\Phi_x=0$ when the average PC is absent.Comment: 12 pages, 8 figure

Charge Fluctuations in the Single Electron Box

Quantum fluctuations of the charge in the single electron box are investigated. Based on a diagrammatic expansion we calculate the average island charge number and the effective charging energy in third order in the tunneling conductance. Near the degeneracy point where the energy of two charge states coincides, the perturbative approach fails, and we explicitly resum the leading logarithmic divergencies to all orders. The predictions for zero temperature are compared with Monte Carlo data and with recent renormalization group results. While good agreement between the third order result and numerical data justifies the perturbative approach in most of the parameter regime relevant experimentally, near the degeneracy point and at zero temperature the resummation is shown to be insufficient to describe strong tunneling effects quantitatively. We also determine the charge noise spectrum employing a projection operator technique. Former perturbative and semiclassical results are extended by the approach.Comment: 20 pages, 15 figure

Strong Charge Fluctuations in the Single-Electron Box: A Quantum Monte Carlo Analysis

We study strong electron tunneling in the single-electron box, a small metallic island coupled to an electrode by a tunnel junction, by means of quantum Monte Carlo simulations. We obtain results, at arbitrary tunneling strength, for the free energy of this system and the average charge on the island as a function of an external bias voltage. In much of the parameter range an extrapolation to the ground state is possible. Our results for the effective charging energy for strong tunneling are compared to earlier -- in part controversial -- theoretical predictions and Monte Carlo simulations