High-conductivity silicon based spectrally selective plasmonic surfaces for sensing in the infrared region

Plasmonic perfect absorbers have found a wide range of applications in imaging, sensing, and light harvesting and emitting devices. Traditionally, metals are used to implement plasmonic structures. For sensing applications, it is desirable to integrate nanophotonic active surfaces with biasing and amplification circuitry to achieve monolithic low cost solutions. Commonly used plasmonic metals such as Au and Ag are not compatible with standard silicon complementary metal-oxide-semiconductor (CMOS) technology. Here we demonstrate plasmonic perfect absorbers based on high conductivity silicon. Standard optical lithography and reactive ion etching techniques were used for the patterning of the samples. We present computational and experimental results of surface plasmon resonances excited on a silicon surface at normal and oblique incidences. We experimentally demonstrate our absorbers as ultra-low cost, CMOS-compatible and efficient refractive index sensing surfaces. The experimental results reveal that the structure exhibits a sensitivity of around 11 000 nm/RIU and a figure of merit of up to 2.5. We also show that the sensing performance of the structure can be improved by increasing doping density. � 2016 IOP Publishing Ltd

All-Silicon Ultra-Broadband Infrared Light Absorbers

Absorbing infrared radiation efficiently is important for critical applications such as thermal imaging and infrared spectroscopy. Common infrared absorbing materials are not standard in Si VLSI technology. We demonstrate ultra-broadband mid-infrared absorbers based purely on silicon. Broadband absorption is achieved by the combined effects of free carrier absorption, and vibrational and plasmonic absorption resonances. The absorbers, consisting of periodically arranged silicon gratings, can be fabricated using standard optical lithography and deep reactive ion etching techniques, allowing for cost-effective and wafer-scale fabrication of micro-structures. Absorption wavebands in excess of 15 micrometers (5-20 μm) are demonstrated with more than 90% average absorptivity. The structures also exhibit broadband absorption performance even at large angles of incidence (θ = 50°), and independent of polarization. © 2016 The Author(s)

Practical multi-featured perfect absorber utilizing high conductivity silicon

We designed all-silicon, multi-featured band-selective perfect absorbing surfaces based on CMOS compatible processes. The center wavelength of the band-selective absorber can be varied between 2 and 22 μm while a bandwidth as high as 2.5 μm is demonstrated. We used a silicon-on-insulator (SOI) wafer which consists of n-type silicon (Si) device layer, silicon dioxide (SiO2) as buried oxide layer, and n-type Si handle layer. The center wavelength and bandwidth can be tuned by adjusting the conductivity of the Si device and handle layers as well as the thicknesses of the device and buried oxide layers. We demonstrate proof-of-concept absorber surfaces experimentally. Such absorber surfaces are easy to microfabricate because the absorbers do not require elaborate microfabrication steps such as patterning. Due to the structural simplicity, low-cost fabrication, wide spectrum range of operation, and band properties of the perfect absorber, the proposed multi-featured perfect absorber surfaces are promising for many applications. These include sensing devices, surface enhanced infrared absorption applications, solar cells, meta-materials, frequency selective sensors and modulators. © 2016 IOP Publishing Ltd

Does organizational formalization facilitate voice and helping organizational citizenship behaviors? It depends on (national) uncertainty norms

Prosocial work behaviors in a globalized environment do not operate in a cultural vacuum. We assess to what extent voice and helping organizational citizenship behaviors (OCBs) vary across cultures, depending on employees’ perceived level of organizational formalization and national uncertainty. We predict that in contexts of uncertainty, cognitive resources are engaged in coping with this uncertainty. Organizational formalization can provide structure that frees up cognitive resources to engage in OCB. In contrast, in contexts of low uncertainty, organizational formalization is not necessary for providing structure and may increase constraints on discretionary behavior. A three-level hierarchical linear modeling analysis of data from 7,537 employees in 267 organizations across 17 countries provides broad support for our hypothesis: perceived organizational formalization is weakly related to OCB, but where uncertainty is high; formalization facilitates voice significantly, helping OCB to a lesser extent. Our findings contribute to clarifying the dynamics between perceptions of norms at organizational and national levels for understanding when employees may engage in helping and voice behaviors. The key implication is that managers can foster OCB through organizational formalization interventions in uncertain environments that are cognitively demanding