A local field emission study of partially aligned carbon-nanotubes by AFM probe

We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition on a silicon substrate. The use of nanometric probes enables local field emission measurements allowing investigation of effects non detectable with a conventional parallel plate setup, where the emission current is averaged on a large sample area. The micrometric inter-electrode distance let achieve high electric fields with a modest voltage source. Those features allowed us to characterize field emission for macroscopic electric fields up to 250 V/$\mu$m and attain current densities larger than 10$^5$ A/cm$^2$. FE behaviour is analyzed in the framework of the Fowler-Nordheim theory. A field enhancement factor $\gamma \approx$ 40-50 and a turn-on field $E_{turn-on} \sim$15 V/$\mu$m at an inter-electrode distance of 1 $\mu$m are estimated. Current saturation observed at high voltages in the I-V characteristics is explained in terms of a series resistance of the order of M$\Omega$. Additional effects as electrical conditioning, CNT degradation, response to laser irradiation and time stability are investigated and discussed

Field emission from single multi-wall carbon nanotubes

Electron field emission characteristics of individual multiwalled carbon nanotubes have been investigated by a piezoelectric nanomanipulation system operating inside a scanning electron microscopy chamber. The experimental setup ensures a high control capability on the geometric parameters of the field emission system (CNT length, diameter and anode-cathode distance). For several multiwalled carbon nanotubes, reproducible and quite stable emission current behaviour has been obtained with a dependence on the applied voltage well described by a series resistance modified Fowler-Nordheim model. A turn-on field of about 30 V/um and a field enhancement factor of around 100 at a cathode-anode distance of the order of 1 um have been evaluated. Finally, the effect of selective electron beam irradiation on the nanotube field emission capabilities has been extensively investigated.Comment: 16 pages, 5 figure

Local Tunneling Study of Three-Dimensional Order Parameter in the π\pi-band of Al-doped MgB2_2 Single Crystals

We have performed local tunneling spectroscopy on high quality Mg$_{1-x}$Al$_x$B$_2$ single crystals by means of Variable Temperature Scanning Tunneling Spectroscopy (STS) in magnetic field up to 3 Tesla. Single gap conductance spectra due to c-axis tunneling were extensively measured, probing different amplitudes of the three-dimensional $\Delta_\pi$ as a function of Al content. Temperature and magnetic field dependences of the conductance spectra were studied in S-I-N configuration: the effect of the doping resulted in a monotonous reduction of the locally measured $T_C$ down to 24K for x=0.2. On the other hand, we have found that the gap amplitude shows a maximum value $\Delta_\pi= 2.3$ meV for x=0.1, while the $\Delta_\pi / T_C$ ratio increases monotonously with doping. The locally measured upper critical field was found to be strongly related to the gap amplitude, showing the maximum value $H_{c2}\simeq3T$ for x=0.1 substituted samples. For this Al concentration the data revealed some spatial inhomogeneity in the distribution of $\Delta_\pi$ on nanometer scale.Comment: 4 pages, 3 figure

Field emission properties of as-grown multiwalled carbon nanotube films

Multiwalled carbon nanotubes have been produced by ethylene catalytic chemical vapor deposition and used to fabricate thick and dense freestanding films ("buckypapers") by membrane filtering. Field emission properties of buckypapers have been locally studied by means of high vacuum atomic force microscopy with a standard metallic cantilever used as anode to collect electrons emitted from the sample. Buckypapers showed an interesting linear dependence in the Fowler-Nordheim plots demonstrating their suitability as emitters. By precisely tuning the tip-sample distance in the submicron region we found out that the field enhancement factor is not affected by distance variations up to 2um. Finally, the study of current stability showed that the field emission current with intensity of about 3,3*10-5A remains remarkably stable (within 5% fluctuations) for several hours.Comment: 18 pages, 5 figure

Field Dependence of Electronic Specific Heat in Two-Band Superconductors

The vortex structure is studied in light of MgB$_2$ theoretically based on a two-band superconducting model by means of Bogoliubov-de Gennes framework. The field dependence of the electronic specific heat coefficient $\gamma (H)$ is focused. The exponent $\alpha$ in $\gamma (H)\propto H^{\alpha}$ is shown to become smaller by adjusting the gap ratio of the two gaps on the major and minor bands. The observed extremely small value $\alpha\sim 0.23$ could be explained reasonably well in this two-band model with the gap ratio $\sim 0.3$.Comment: 5 pages, 4 figures, to be published in J. Phys. Soc. Jp

Field emission from two-dimensional GeAs

GeAs is a layered material of the IV–V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission (FE) current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. FE occurs with a turn-on field of ~80 Vum-1 and attains a current density higher than 10 Acm-2, following the general Fowler–Nordheim model with high reproducibility