Flip-chip assembly of an integrated optical sensor

For enabling low cost mass production for photonic circuits, the application of flipchip technology creates huge expectations. We report on the results of a project, having the goal to demonstrate standard packaging technology in combination with integrated optics, entailing demands and limitations different from IC technology. Mainly fiber attachment, but also special features as sensor window accessibility at the top-side of the chip are prohibiting the positioning of the optical layer stack and solder pads at the same side of the silicon wafer. Therefore, feed through technology had to be included. Compatibility issues in combining feed through technology with integrated optics processing have been solved and the feasibility of feed-through metallization and flip-chip assembly in combination with an integrated optical sensor has been demonstrated

Photodefinition of channel waveguide in electro-optic polymer

Polymers with optically active nonlinear chromophores have been shown to have a promising future in low cost and high speed electro–optic device applications. However, a main question of concern is the photochemical stability of the chromophores for long term application. The chromophore TCVDPA with a benzene bridge between a tricyanovinyl acceptor and an amino donor has been reported to have high photochemical stability combined with high electro-optic activity. In the current work direct waveguide definition of the host polymer SU-8, a negative photoresist, containing this chromophore by masked UV exposure followed by development, has been demonstrated. This was possible by utilizing the chromophore low absorption window in the UV region that allows crosslinking of the host polymer by exposing to UV light followed by thermal curing

Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures

This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF/sub 6//O/sub 2/-based high-density plasmas at cryogenic temperatures. Procedures of how to tune the equipment for optimal results with respect to etch rate and profile control are described. Profile control is a delicate balance between the respective etching and deposition rates of a SiO/sub x/F/sub y/ passivation layer on the sidewalls and bottom of an etched structure in relation to the silicon removal rate from unpassivated areas. Any parameter that affects the relative rates of these processes has an effect on profile control. The deposition of the SiO/sub x/F/sub y/ layer is mainly determined by the oxygen content in the SF/sub 6/ gas flow and the electrode temperature. Removal of the SiO/sub x/F/sub y/ layer is mainly determined by the kinetic energy (self-bias) of ions in the SF/sub 6//O/sub 2/ plasma. Diagrams for profile control are given as a function of parameter settings, employing the previously published "black silicon method". Parameter settings for high rate silicon bulk etching, and the etching of micro needles and micro moulds are discussed, which demonstrate the usefulness of the diagrams for optimal design of etched features. Furthermore, it is demonstrated that in order to use the oxygen flow as a control parameter for cryogenic DRIE, it is necessary to avoid or at least restrict the presence of fused silica as a dome material, because this material may release oxygen due to corrosion during operation of the plasma source. When inert dome materials like alumina are used, etching recipes can be defined for a broad variety of microstructures in the cryogenic temperature regime. Recipes with relatively low oxygen content (1-10% of the total gas volume) and ions with low kinetic energy can now be applied to observe a low lateral etch rate beneath the mask, and a high selectivity (more than 500) of silicon etching with respect to polymers and oxide mask materials is obtained. Crystallographic preference etching of silicon is observed at low wafer temperature (-120/spl deg/C). This effect is enhanced by increasing the process pressure above 10 mtorr or for low ion energies (below 20 eV)

Design and realisation of a MZI type polymer based high speed EO-modulator

We designed a 20 GHz Mach Zehnder interferometric EO-modulator based on a new developed polyesterimide. Measurements show a V/sub /spl pi// of 7.5 V, an insertion loss of 11 dB and an extinction ratio exceeding 20 dB for an interaction length of 2 cm

Synthesis, characterisation and gas permeation studies on microporous silica and alumina-silica membranes for separation of propane and propylene

Microporous silica membranes are known to exhibit molecular sieving effects. However, separation of nearly equal sized molecules is difficult to carry out by size exclusion. Introducing sorption selectivity and keeping the kinetics favourable to facilitate a good contribution of permeation from sorption is a possible solution to enhance selectivity of adsorbing molecules. Results are presented in this paper on the synthesis of a microporous silica membrane with commendable permselectivity between helium and propylene. Modifications are performed on the membrane to improve its almost non-selective nature to propylene/propane mixtures to give practical separation values. Gas separation results on the modified membranes are presented. Surface selectivity on the newly added alumina surface layer is identified as the helping mechanism in realising this separation

Spatially Resolved Stellar Populations of Eight GOODS-South AGN at z~1

We present a pilot study of the stellar populations of 8 AGN hosts at z~1 and compare to (1) lower redshift samples and (2) a sample of nonactive galaxies of similar redshift. We utilize K' images in the GOODS South field obtained with the laser guide star adaptive optics (LGSAO) system at Keck Observatory. We combine this K' data with B, V, i, and z imaging from the ACS on HST to give multi-color photometry at a matched spatial resolution better than 100 mas in all bands. The hosts harbor AGN as inferred from their high X-ray luminosities (L_X > 10^42 ergs/s) or mid-IR colors. We find a correlation between the presence of younger stellar populations and the strength of the AGN, as measured with [OIII] line luminosity or X-ray (2-10 keV) luminosity. This finding is consistent with similar studies at lower redshift. Of the three Type II galaxies, two are disk galaxies and one is of irregular type, while in the Type I sample there only one disk-like source and four sources with smooth, elliptical/spheroidal morphologies. In addition, the mid-IR SEDs of the strong Type II AGN indicate that they are excited to LIRG (Luminous InfraRed Galaxy) status via galactic starbursting, while the strong Type I AGN are excited to LIRG status via hot dust surrounding the central AGN. This supports the notion that the obscured nature of Type II AGN at z~1 is connected with global starbursting and that they may be extincted by kpc-scale dusty features that are byproducts of this starbursting.Comment: 56 pages, 39 figures, accepted to A