Optical Absorption‐Based In Situ Characterization of Halide Perovskites

Halide perovskites have emerged as materials for high-performance optoelectronic devices. Often, progress made to date in terms of higher efficiency and stability is based on increasing material complexity, i.e., formation of multicomponent halide perovskites with multiple cations and anions. In this review article, the use of in situ optical methods, namely, photoluminescence (PL) and UV-vis, that provide access to the relevant time and length scales to ascertain chemistry–property relationships by monitoring evolving properties is discussed. Additionally, because halide perovskites are electron/ion conductors and prone to solid-state ion transport under various external stimuli, application of these optical methods in the context of ionic movement is described to reveal mechanistic insights. Finally, examples of using in situ PL and UV-vis to study degradation and phase transitions are reviewed to demonstrate the wealth of information that can be obtained regarding many different aspects of ongoing research activities in the field of halide perovskites

Slow relaxation of excited states in strain-induced quantum dots

We have studied photoluminescence from GaAs/AlxGa1-xAs strain-induced quantum dots in a magnetic field. These dots have high radiative efficiency and long (?ns) luminescent decay times. At low excitation intensities, corresponding to average carrier densities of less than one electron-hole pair per dot, excited-state (\u8216\u8216hot\u8217\u8217) luminescence due to slow interstate relaxation is observed. At intermediate intensities, where there are several electron-hole pairs per dot, the hot luminescence disappears, showing that the relaxation rate has increased. However, the excited-state emission reemerges at high excitation when the ground state is saturated. The interstate relaxation rate in the quantum dots under low excitation is at least two orders smaller than that of the host quantum well. The reduced rate is attributed to the discrete density of states in a quantum dot, which inhibits single-phonon emission because the excitons are spatially too large to couple to phonons with the required energy. When there are several electron-hole pairs per dot, carrier-carrier interaction accelerates relaxation. The magnetic field is used to separate the quantum dot states and allows us to probe how their relaxation depends on energy. We find that there is a strong increase in the relaxation rate when the sublevel energy exceeds about 20 meV. \ua9 1996 The American Physical Society.NRC publication: Ye

Photonic biosensor based on photocorrosion of GaAs/AlGaAs quantum heterostructures for detection of Legionella pneumophila

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