Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure

A multiband empirical tight-binding model for group-III-nitride semiconductors with a wurtzite structure has been developed and applied to both bulk systems and embedded quantum dots. As a minimal basis set we assume one s-orbital and three p-orbitals, localized in the unit cell of the hexagonal Bravais lattice, from which one conduction band and three valence bands are formed. Non-vanishing matrix elements up to second nearest neighbors are taken into account. These matrix elements are determined so that the resulting tight-binding band structure reproduces the known Gamma-point parameters, which are also used in recent kp-treatments. Furthermore, the tight-binding band structure can also be fitted to the band energies at other special symmetry points of the Brillouin zone boundary, known from experiment or from first-principle calculations. In this paper, we describe details of the parametrization and present the resulting tight-binding band structures of bulk GaN, AlN, and InN with a wurtzite structure. As a first application to nanostructures, we present results for the single-particle electronic properties of lens-shaped InN quantum dots embedded in a GaN matrix.Comment: 10 pages, 5 figures, two supplementary file

A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots

In this work we present a comparison of multiband k.p-models, the effective bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for the example of a truncated pyramidal GaN/AlN self-assembled quantum dot with a zincblende structure. For the system under consideration, we find a very good agreement between the results of the microscopic models and the 8-band k.p-formalism, in contrast to a 6+2-band k.p-model, where conduction band and valence band are assumed to be decoupled. This indicates a surprisingly strong coupling between conduction and valence band states for the wide band gap materials GaN and AlN. Special attention is paid to the possible influence of the weak spin-orbit coupling on the localized single-particle wave functions of the investigated structure

Optically and electrically controllable adatom spin-orbital dynamics in transition metal dichalcogenides

We analyze the interplay of spin-valley coupling, orbital physics and magnetic anisotropy taking place at single magnetic atoms adsorbed on semiconducting transition-metal dichalcogenides, MX$_2$ (M = Mo, W; X = S, Se). Orbital selection rules turn out to govern the kinetic exchange coupling between the adatom and charge carriers in the MX$_2$ and lead to highly orbitally dependent spin-flip scattering rates, as we illustrate for the example of transition metal adatoms with $d^9$ configuration. Our ab initio calculations suggest that $d^9$ configurations are realizable by single Co, Rh, or Ir adatoms on MoS$_2$, which additionally exhibit a sizable magnetic anisotropy. We find that the interaction of the adatom with carriers in the MX$_2$ allows to tune its behavior from a quantum regime with full Kondo screening to a regime of "Ising spintronics" where its spin-orbital moment acts as classical bit, which can be erased and written electronically and optically.Comment: 6 pages, 4 figure