Calibrated Microwave Reflectance in Low-Temperature Scanning Tunneling Microscopy

We outline calibrated measurements of the microwave reflection coefficient from the tunnel junction of an ultra-high vacuum low temperature scanning tunneling microscope. The microwave circuit design is described in detail, including an interferometer for enhanced signal-to-noise and a demodulation scheme for lock-in detection. A quantitative, in-situ procedure for impedance calibration based on the numerical 3-error-term model is presented. Our procedure exploits the response of the microwave reflection signal due to the change of the tunneling conductance caused by sub-nm variation of the tunneling distance. Experimental calibration is achieved by a least-squares numerical fit of simultaneously measured conductance and microwave reflection retraction curves at finite conductance. Our method paves the way for nanoscale microscopy and spectroscopy of dielectric surface properties at GHz frequencies and cryogenic temperatures. This opens a promising pathway even for dielectric fingerprinting at the single molecule limit.Comment: The manuscript has been improved in response to reviewer comments. Changes include addition of extra details and verification, updated figure layout to improve clarity, and additional context added to the introduction and conclusion. The conclusions and the underlying data remain the same. 12 pages, 4 figures, submitted to Review of Scientific Instrument

Dynamic electrostatic force microscopy in liquid media

We present the implementation of dynamic electrostatic force microscopy in liquid media. This implementation enables the quantitative imaging of local dielectric properties of materials in electrolyte solutions with nanoscale spatial resolution. Local imaging capabilities are obtained by probing the frequency-dependent and ionic concentration-dependent electrostatic forces at high frequency (>1 MHz), while quantification of the interaction forces is obtained with finite-element numerical calculations. The results presented open a wide range of possibilities in a number of fields where the dielectric properties of materials need to be probed at the nanoscale and in a liquid environment

Nanoscale measurement of the dielectric constant of supported lipid bilayers in aqueous solutions with electrostatic force microscopy

We present what is, to our knowledge, the first experimental demonstration of dielectric constant measurement and quantification of supported lipid bilayers in electrolyte solutions with nanoscale spatial resolution. The dielectric constant was quantitatively reconstructed with finite element calculations by combining thickness information and local polarization forces which were measured using an electrostatic force microscope adapted to work in a liquid environment. Measurements of submicrometric dipalmitoylphosphatidylcholine lipid bilayer patches gave dielectric constants of εr ∼ 3, which are higher than the values typically reported for the hydrophobic part of lipid membranes (εr ∼ 2) and suggest a large contribution of the polar headgroup region to the dielectric response of the lipid bilayer. This work opens apparently new possibilities in the study of biomembrane electrostatics and other bioelectric phenomena

Effects of Dielectric Stoichiometry on the Photoluminescence Properties of Encapsulated WSe2 Monolayers

Two-dimensional transition-metal-dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact performances. However atomically thin materials are highly sensitive to surrounding dielectric media, which imposes severe limitations to their practical applicability. Hence for their suitable integration into devices, the development of reliable encapsulation procedures that preserve their physical properties are required. Here, the excitonic photoluminescence of WSe2 monolayer flakes is assessed, at room temperature and 10 K, on mechanically exfoliated flakes encapsulated with SiOx and AlxOy layers employing chemical and physical deposition techniques. Conformal flakes coating on untreated - non-functionalized - flakes is successfully demonstrated by all the techniques except for atomic layer deposition, where a cluster-like oxide coating is observed. No significant compositional or strain state changes in the flakes are detected upon encapsulation by any of the techniques. Remarkably, our results evidence that the flakes' optical emission is strongly influenced by the quality of the encapsulating oxide - stoichiometry -. When the encapsulation is carried out with slightly sub-stoichiometric oxides two remarkable phenomena are observed. First, there is a clear electrical doping of the monolayers that is revealed through a dominant trion - charged exciton - room-temperature photoluminescence. Second, a strong decrease of the monolayers optical emission is measured attributed to non-radiative recombination processes and/or carriers transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation.Comment: 30 pages, 6 figure

Nondestructive imaging of atomically thin nanostructures buried in silicon

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components of devices for next-generation classical and quantum information processing. Until now, the characteristics of buried dopant nanostructures could only be inferred from destructive techniques and/or the performance of the final electronic device; this severely limits engineering and manufacture of real-world devices based on atomic-scale lithography. Here, we use scanning microwave microscopy (SMM) to image and electronically characterize three-dimensional phosphorus nanostructures fabricated via scanning tunneling microscope–based lithography. The SMM measurements, which are completely nondestructive and sensitive to as few as 1900 to 4200 densely packed P atoms 4 to 15 nm below a silicon surface, yield electrical and geometric properties in agreement with those obtained from electrical transport and secondary ion mass spectroscopy for unpatterned phosphorus δ layers containing ~1013 P atoms. The imaging resolution was 37 ± 1 nm in lateral and 4 ± 1 nm in vertical directions, both values depending on SMM tip size and depth of dopant layers. In addition, finite element modeling indicates that resolution can be substantially improved using further optimized tips and microwave gradient detection. Our results on three-dimensional dopant structures reveal reduced carrier mobility for shallow dopant layers and suggest that SMM could aid the development of fabrication processes for surface code quantum computers.ISSN:2375-254

Local characterization of ferromagnetic resonance in bulk and patterned magnetic materials using scanning microwave microscopy

We have demonstrated the capabilities of the scanning microwave microscopy (SMM) technique for measuring ferromagnetic resonance (FMR) spectra in nanometric areas of magnetic samples. The technique is evaluated using three different samples, including a yttrium iron garnet (YIG) polycrystalline bulk sample and a thick YIG film grown by liquid phase epitaxy (LPE). Patterned permalloy (Py) micromagnetic dots have been characterized to assess the performance for imaging applications of the technique, measuring the variation of the magnetic properties of the sample along its surface. The proposed technique may pave the way for the development of high spatially resolved mapping of magnetostatic modes in different nanomagnetic and micromagnetic structures