The Cultural Property Laws of Japan: Social, Political, and Legal Influences

Japan\u27s Law for the Protection of Cultural Properties has been heralded as one of the most sophisticated and complete statutes of its kind and has been viewed as a model for other countries considering means to protect their ethnographic and cultural treasures. This Article examines the social, cultural, political, and legal influences antecedent to the promulgation of the statute and discusses the complexities inherent in composing legislation of this sort. The specific Japanese legislative and administrative efforts undertaken to protect national treasures prior to promulgation of the statute, and the political environment contemporaneous with its passage, are compiled, analyzed, and provided to the western audience. Perhaps of greater significance, however, the influence of the West, and particularly the United States and its citizens, upon the Japanese efforts to protect cultural property is examined through the use of archival U.S. Government documents of the Arts and Monuments Division of the Supreme Commander Allied Powers composed during the occupation of Japan. Finally, from a pragmatic perspective, this Article analyzes and explains the legal reasons why it is currently difficult for Japan to join in the international efforts of the United Nations Educational Scientific and Cultural Organization ( UNESCO ) and International Institute for the Unification of Private Laws ( UNIDROIT ) in the global protection of cultural treasures, the strong domestic protection of such properties notwithstanding

The Cultural Property Laws of Japan: Social, Political, and Legal Influences

Japan\u27s Law for the Protection of Cultural Properties has been heralded as one of the most sophisticated and complete statutes of its kind and has been viewed as a model for other countries considering means to protect their ethnographic and cultural treasures. This Article examines the social, cultural, political, and legal influences antecedent to the promulgation of the statute and discusses the complexities inherent in composing legislation of this sort. The specific Japanese legislative and administrative efforts undertaken to protect national treasures prior to promulgation of the statute, and the political environment contemporaneous with its passage, are compiled, analyzed, and provided to the western audience. Perhaps of greater significance, however, the influence of the West, and particularly the United States and its citizens, upon the Japanese efforts to protect cultural property is examined through the use of archival U.S. Government documents of the Arts and Monuments Division of the Supreme Commander Allied Powers composed during the occupation of Japan. Finally, from a pragmatic perspective, this Article analyzes and explains the legal reasons why it is currently difficult for Japan to join in the international efforts of the United Nations Educational Scientific and Cultural Organization ( UNESCO ) and International Institute for the Unification of Private Laws ( UNIDROIT ) in the global protection of cultural treasures, the strong domestic protection of such properties notwithstanding

Exploring the Experiences and Perceptions of 21st Century Leadership Academy Participants

The 21st Century Leadership Academy grew out of an effort by the Council of Technology Teacher Education’s (CTTE) Leadership Development Committee to prepare future leaders for the field of Technology & Engineering Education (TEE). Efforts by Drs. Roger Hill (University of Georgia) and Bill Havice (Clemson University) led to the creation, and subsequent implementation, of this leadership academy with support from CTTE (later renamed the Council on Technology & Engineering Teacher Education [CTETE]) and the International Technology & Engineering Education Association (ITEEA). Initially, participation in the leadership academy was focused on early-career university faculty but recruitment was later expanded to include individuals with related professional experience (e.g., graduate students, tenured faculty members, etc.) and, as of January 2021, more than 80 individuals have participated in the academy. This study reports an investigation into the experiences and perceptions of the academy alums with an additional focus on their professional involvement, how participation may have influenced these activities, and suggestions they had for future cohorts. In addition, our investigation provides suggestions for future similar leadership training efforts that could be applied in a variety of fields. Our efforts, as researchers, aim to present the shared experience as navigated by the cohort participants. Although individual takeaways vary, overall themes such as networking and collaboration underscore the experience of participants in each cohort year. While participants consider themselves active in the field of Technology & Engineering Education, few of them are serving in leadership roles within CTETE or ITEEA

Radiation effects on p+n InP junctions grown by MOCVD

The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells

Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage

Radiation damage results from two-terminal monolithic InP/Ga(0.47)In(0.53)As tandem solar cells subject to 1 MeV electron irradiation are presented. Efficiencies greater than 22 percent have been measured by the National Renewable Energy Laboratory from 2x2 sq cm cells at 1 sun, AMO (25 C). The short circuit current density, open circuit voltage and fill factor are found to tolerate the same amount of radiation at low fluences. At high fluence levels, slight differences are observed. Decreasing the base amount of radiation at the Ga(0.47)In(0.53)As bottomcell improved the radiation resistance of J(sub sc) dramatically. This is turn, extended the series current flow through the subcell substantially up to a fluence of 3x10(exp 15) cm(exp -2) compared to 3x10(exp 14) cm(exp -2), as observed previously. The degradation of the maximum power output form tandem device is comparable to that from shallow homojunction (SHJ) InP solar cells, and the mechanism responsible for such degradation is explained in terms of the radiation response of the component cells. Annealing studies revealed that the recovery of the tandem cell response is dictated by the annealing characteristics exhibited by SHJ InP solar cells

The use of displacement damage dose to correlate degradation in solar cells exposed to different radiations

It has been found useful in the past to use the concept of 'equivalent fluence' to compare the radiation response of different solar cell technologies. Results are usually given in terms of an equivalent 1 MeV electron or an equivalent 10 MeV proton fluence. To specify cell response in a complex space-radiation environment in terms of an equivalent fluence, it is necessary to measure damage coefficients for a number of representative electron and proton energies. However, at the last Photovoltaic Specialist Conference we showed that nonionizing energy loss (NIEL) could be used to correlate damage coefficients for protons, using measurements for GaAs as an example. This correlation means that damage coefficients for all proton energies except near threshold can be predicted from a measurement made at one particular energy. NIEL is the exact equivalent for displacement damage of linear energy transfer (LET) for ionization energy loss. The use of NIEL in this way leads naturally to the concept of 10 MeV equivalent proton fluence. The situation for electron damage is more complex, however. It is shown that the concept of 'displacement damage dose' gives a more general way of unifying damage coefficients. It follows that 1 MeV electron equivalent fluence is a special case of a more general quantity for unifying electron damage coefficients which we call the 'effective 1 MeV electron equivalent dose'

Quantifying Low Energy Proton Damage in Multijunction Solar Cells

An analysis of the effects of low energy proton irradiation on the electrical performance of triple junction (3J) InGaP2/GaAs/Ge solar cells is presented. The Monte Carlo ion transport code (SRIM) is used to simulate the damage profile induced in a 3J solar cell under the conditions of typical ground testing and that of the space environment. The results are used to present a quantitative analysis of the defect, and hence damage, distribution induced in the cell active region by the different radiation conditions. The modelling results show that, in the space environment, the solar cell will experience a uniform damage distribution through the active region of the cell. Through an application of the displacement damage dose analysis methodology, the implications of this result on mission performance predictions are investigated