Universality of (2+1)-dimensional restricted solid-on-solid models

Extensive dynamical simulations of Restricted Solid on Solid models in $D=2+1$ dimensions have been done using parallel multisurface algorithms implemented on graphics cards. Numerical evidence is presented that these models exhibit KPZ surface growth scaling, irrespective of the step heights $N$. We show that by increasing $N$ the corrections to scaling increase, thus smaller step-sized models describe better the asymptotic, long-wave-scaling behavior

Bit-Vectorized GPU Implementation of a Stochastic Cellular Automaton Model for Surface Growth

Stochastic surface growth models aid in studying properties of universality classes like the Kardar--Paris--Zhang class. High precision results obtained from large scale computational studies can be transferred to many physical systems. Many properties, such as roughening and some two-time functions can be studied using stochastic cellular automaton (SCA) variants of stochastic models. Here we present a highly efficient SCA implementation of a surface growth model capable of simulating billions of lattice sites on a single GPU. We also provide insight into cases requiring arbitrary random probabilities which are not accessible through bit-vectorization.Comment: INES 2016, Budapest http://www.ines-conf.org/ines-conf/2016index.htm

Electronic transport properties through thiophenes on switchable domains

The electronic transport of electrons and holes through stacks of $\alpha$,\ome ga-dicyano-$\beta$,$\beta$'-dibutyl- quaterthiophene (DCNDBQT) as part of a nov el organic ferroic field-effect transistor (OFFET) is investigated. The novel ap plication of a ferroelectric instead of a dielectric substrate provides the poss ibility to switch bit-wise the ferroelectric domains and to employ the polarizat ion of these domains as a gate field in an organic semiconductor. A device conta ining very thin DCNDBQT films of around 20 nm thickness is intended to be suitab le for logical as well as optical applications. We investigate the device proper ties with the help of a phenomenological model called multilayer organic light-e mitting diodes (MOLED), which was extended to transverse fields. The results sho wed, that space charge and image charge effects play a crucial role in these org anic devices

First-principles study of ferroelectric domain walls in multiferroic bismuth ferrite

We present a first-principles density functional study of the structural, electronic and magnetic properties of the ferroelectric domain walls in multiferroic BiFeO3. We find that domain walls in which the rotations of the oxygen octahedra do not change their phase when the polarization reorients are the most favorable, and of these the 109 degree domain wall centered around the BiO plane has the lowest energy. The 109 degree and 180 degree walls have a significant change in the component of their polarization perpendicular to the wall; the corresponding step in the electrostatic potential is consistent with a recent report of electrical conductivity at the domain walls. Finally, we show that changes in the Fe-O-Fe bond angles at the domain walls cause changes in the canting of the Fe magnetic moments which can enhance the local magnetization at the domain walls.Comment: 9 pages, 20 figure

Defect-induced magnetism in graphite through neutron irradiation

We have investigated the variation in the magnetization of highly ordered pyrolytic graphite (HOPG) after neutron irradiation, which introduces defects in the bulk sample and consequently gives rise to a large magnetic signal. We observe strong paramagnetism in HOPG, increasing with the neutron fluence. We correlate the induced paramagnetism with structural defects by comparison with density-functional theory calculations. In addition to the in-plane vacancies, the trans-planar defects also contribute to the magnetization. The lack of any magnetic order between the local moments is possibly due to the absence of hydrogen/nitrogen chemisorption, or the magnetic order cannot be established at all in the bulk form.Comment: 10 pages, 8 figure