Two-dimensional magnetotransport in Bi2Te2Se nanoplatelets

Single-crystalline Bi2Te2Se nanoplates with thicknesses between 8 and 30 nm and lateral sizes of several micrometers were synthesized by a vapour-solid growth method. Angle-dependent magnetoconductance measurements on individual nanoplates revealed the presence of a two-dimensional weak anti-localization effect. In conjunction with gate-dependent charge transport studies performed at different temperatures, evidence was gained that this effect originates from the topologically protected surface states of the nanoplates

Tunneling spectroscopy of localized states of WS2\mathrm{WS}_2 barriers in vertical van der Waals heterostructures

In transition metal dichalcogenides, defects have been found to play an important role, affecting doping, spin-valley relaxation dynamics, and assisting in proximity effects of spin-orbit coupling. Here, we study localized states in $\mathrm{WS}_2$ and how they affect tunneling through van der Waals heterostructures of h-BN/graphene/$\mathrm{WS}_2$/metal. The obtained conductance maps as a function of bias and gate voltage reveal single-electron transistor behavior (Coulomb blockade) with a rich set of transport features including excited states and negative differential resistance regimes. Applying a perpendicular magnetic field, we observe a shift in the energies of the quantum levels and information about the orbital magnetic moment of the localized states is extracted

Correlation of nanoscale electromechanical and mechanical properties of twisted double bi-layer graphene via UFM, PFM, and E-HFM

Recently, multiple theoretical and experimental studies have been published regarding the properties of stacked two-dimensional (2D) layers forming a twisted heterostructure. This field (known as twistronics) shows that properties of 2D materials can be modified to a great degree, including bandgap modulation and creating superconductive structures. Given the versatility that these structures have, many exciting engineering is being applied to them resulting in promising properties. In this study, we investigated a heterostructure composed of two twisted graphene bi-layers with a small angle between them (1.1º), where an atomic reconstruction is induced changing the lattice symmetry and creating a Moiré pattern. The electrical and mechanical properties of the 2D nanostructure are affected by this symmetry reconstruction, generating relaxation-induced strain gradients. We compared nanomechanical mapping via Ultrasonic Force Microscopy (UFM) and electromechanical response probed by Piezoresponse Force Microscopy (PFM) and Electrical Heterodyne Force Microscopy (E-HFM). These allowed us to assign Moiré patterns of the heterostructure to the particular crystallographic arrangements and to quantify the local Young’s modulus variation between single and double domain walls. Moreover, by measuring these domain walls specifically with PFM, it is possible to extract evidence of non-uniform strain in stretched triangular domains in the Moiré pattern. The phase images from the E-HFM allow us to observe a fast time-domain nanoelectromechanical relaxation in the order of picoseconds with nanoscale lateral resolution

Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects. As exemplified by the topological insulator Bi2Te2Se, we show that via van der Waals epitaxial growth on thin hBN substrates the structural quality of such nanoplatelets can be substantially improved. The surface state carrier mobility of nanoplatelets on hBN is increased by a factor of about 3 compared to platelets on conventional Si/SiOx substrates, which enables the observation of well-developed Shubnikov-de Haas oscillations. We furthermore demonstrate the possibility to effectively tune the Fermi level position in the films with the aid of a back gate

Efficient heating of single-molecule junctions for thermoelectric studies at cryogenic temperatures

The energy dependent thermoelectric response of a single molecule contains valuable information about its transmission function and its excited states. However, measuring it requires devices that can efficiently heat up one side of the molecule while being able to tune its electrochemical potential over a wide energy range. Furthermore, to increase junction stability, devices need to operate at cryogenic temperatures. In this work, we report on a device architecture to study the thermoelectric properties and the conductance of single molecules simultaneously over a wide energy range. We employ a sample heater in direct contact with the metallic electrodes contacting the single molecule which allows us to apply temperature biases up to ΔT = 60 K with minimal heating of the molecular junction. This makes these devices compatible with base temperatures Tbath < 2 K and enables studies in the linear (Δ T ≪ T molecule) and nonlinear (Δ T ≫ T molecule) thermoelectric transport regimes

Single-material MoS2 thermoelectric junction enabled by substrate engineering

To realize a thermoelectric power generator, typically, a junction between two materials with different Seebeck coefficients needs to be fabricated. Such differences in Seebeck coefficients can be induced by doping, which renders it difficult when working with two-dimensional (2d) materials. However, doping is not the only way to modulate the Seebeck coefficient of a 2d material. Substrate-altered electron–phonon scattering mechanisms can also be used to this end. Here, we employ the substrate effects to form a thermoelectric junction in ultrathin, few-layer MoS2 films. We investigated the junctions with a combination of scanning photocurrent microscopy and scanning thermal microscopy. This allows us to reveal that thermoelectric junctions form across the substrate-engineered parts. We attribute this to a gating effect induced by interfacial charges in combination with alterations in the electron–phonon scattering mechanisms. This work demonstrates that substrate engineering is a promising strategy for developing future compact thin-film thermoelectric power generators

Distinguishing Lead and Molecule States in Graphene-Based Single-Electron Transistors

Graphene provides a two-dimensional platform for contacting individual molecules, which enables transport spectroscopy of molecular orbital, spin, and vibrational states. Here we report single-electron tunneling through a molecule that has been anchored to two graphene leads. Quantum interference within the graphene leads gives rise to an energy-dependent transmission and fluctuations in the sequential tunnel-rates. The lead states are electrostatically tuned by a global back-gate, resulting in a distinct pattern of varying intensity in the measured conductance maps. This pattern could potentially obscure transport features that are intrinsic to the molecule under investigation. Using ensemble averaged magneto-conductance measurements, lead and molecule states are disentangled, enabling spectroscopic investigation of the single molecule