Impact of dietary patterns, individual and workplace characteristics on blood pressure status among civil servants in Bida and Wushishi communities of Niger State, Nigeria

The global burden estimate of hypertension is alarming and results in several million deaths annually. A high incidence of sudden deaths from cardiovascular diseases in the civil workforce in Nigeria is often reported. However, the associations between Dietary Patterns (DPs), individual, and workplace characteristics of hypertension among this workforce have not been fully explored. This study aimed to identify DP in the Bida and Wushishi Communities of Niger State and establish its relationship with hypertension along with other individual and workplace characteristics. Factor analysis was used to establish DP, Chi-square test to identify their relationships with hypertension, and logistic regression to determine the predictor risk factors. The prevalence of hypertension was 43.7%; mean weight, height, and body fat were: 72.8±15 kg, 166±8.9 mm and 30.4%, respectively. Three DPs: “Efficient Diet,” “Local diet,” and “Energy Boost Diet” were identified. The factor loading scores for these factors were divided into quintiles Q1–Q5; none of them had a significant effect on hypertension status. Conversely, increase in age, the Ministry, Department, and Agency (MDA) of employment, frequency of eating in restaurants, and obesity were identified as significant risk factors. After adjusting for confounders (age, body mass index, MDA, and eating habits), a high score (Q5) in “efficient diet pattern” was significantly related to a lower likelihood of hypertension than a low score (Q1). The prevalence of hypertension among the participants was relatively very high. An increase in age and working in educational sector were risk factors associated with hypertension. Therefore, it is recommended that civil servants engage in frequent exercise and undergo regular medical checkups, especially as they get older. These findings highlight the need for large-scale assessment of the impact of variables considered in this study on hypertension, among the civil workforce across Niger state and Nigeria

Doping controlled roughness and defined mesoporosity in chemically etched silicon nanowires with tunable conductivity

By using Si(100) with different dopant type (n(++)-type (As) or p-type (B)), we show how metal-assisted chemically etched (MACE) nanowires (NWs) can form with rough outer surfaces around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly doped n-type NWs. We used high resolution electron microscopy techniques to define the characteristic roughening and mesoporous structure within the NWs and how such structures can form due to a judicious choice of carrier concentration and dopant type. The n-type NWs have a mesoporosity that is defined by equidistant pores in all directions, and the inter-pore distance is correlated to the effective depletion region width at the reduction potential of the catalyst at the silicon surface in a HF electrolyte. Clumping in n-type MACE Si NWs is also shown to be characteristic of mesoporous NWs when etched as high density NW layers, due to low rigidity (high porosity). Electrical transport investigations show that the etched nanowires exhibit tunable conductance changes, where the largest resistance increase is found for highly mesoporous n-type Si NWs, in spite of their very high electronic carrier concentration. This understanding can be adapted to any low-dimensional semiconducting system capable of selective etching through electroless, and possibly electrochemical, means. The process points to a method of multiscale nanostructuring NWs, from surface roughening of NWs with controllable lengths to defined mesoporosity formation, and may be applicable to applications where high surface area, electrical connectivity, tunable surface structure, and internal porosity are required. (C) 2013 AIP Publishing LLC

Factor structure and construct validity of the Temporal Experience of Pleasure Scales

Feelings of pleasure felt in the moment of goal attainment (consummatory pleasure) are thought to be dissociable from feelings of desire connected with the motivated approach of goals (anticipatory pleasure). The Temporal Experience of Pleasure Scales (TEPS; Gard, Gard, Kring, & John, 2006) was developed to assess individual differences in these distinct processes. Recently, an independent evaluation of the psychometric characteristic of a Chinese-translated TEPS suggested a more complex factor structure (Chan et al., 2012). The present study aimed to re-examine the factor structure and convergent and divergent validity of the TEPS in two previously unexamined multi-ethnic samples. University students in the United Kingdom (N=294) completed the TEPS while university students in Australia (N= 295) completed the TEPS as well as a battery of conceptually related questionnaires. A confirmatory factor analysis (CFA) of Gard et al.’s (2006) two-factor model produced inadequate fit, which model-modification indices suggested may be due to item cross-loadings. This issue was examined further using an exploratory factor analysis (EFA), which revealed a clear two-factor solution despite cross-loadings among some items. Finally, mixed evidence for convergent-divergent validity was obtained, in terms of relationships between the TEPS and measures of anhedonia, approach-motivation and positive emotion

High density growth of indium seeded silicon nanowires in the vapor phase of a high boiling point solvent

peer-reviewedHerein, we describe the growth of Si nanowires (NWs) in the vapor phase of an organic solvent medium on various substrates (Si, glass, and stainless steel) upon which an indium layer was evaporated. Variation of the reaction time allowed NW length and density to be controlled. The NWs grew via a predominantly root-seeded mechanism with discrete In catalyst seeds formed from the evaporated layer. The NWs and substrates were characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray diffraction (XRD), scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). The suitability of the indium seeded wires as anode components in Li batteries was probed using cyclic voltammetric (CV) measurements. The route represents a versatile, glassware-based method for the formation of Si NWs directly on a variety of substrates.ACCEPTEDpeer-reviewe

High density germanium nanowire growth directly from copper foil by self induced solid seeding

Herein, we describe the growth of highly dense germanium nanowire mats directly on copper foil by a self induced, solid seeded protocol. The existence of Cu3Ge tips on each of the nanowires indicates that growth proceeds via a solid catalyzed route, dependent on the in situ formation of the germanide intermediate. The nanowires show a tight diameter distribution and typically growth directions resulting from similarities in the d-spacings between the nanowire and the catalyst seed. The nanowires and substrates were characterized using transmission electron microscopy (TEM), scanning electron microscopy (SEM), x-ray diffraction (XRD) scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDX) and electron backscatter diffraction (EBSD)

Synthesis and characterization of CuZnSe2 nanocrystals in wurtzite, zinc blende and core-shell polytypes

CuZnSe2 (CZSe) is an important ternary semiconductor comprised of earth-abundant elements with a suitable bandgap for visible light absorption and structural/stoichiometric versatility that make it a promising candidate for photovoltaic applications. Here we report the controlled synthesis of the compound copper chalcogenide in nanocrystal form using a colloidal hot injection approach. Furthermore, we demonstrate control over the crystal phase to occur as either wurtzite (WZ) or zinc blende (ZB) as a function of the presence and absence of phosphine-based ligands. A major emission peak was observed at ∼1.7 eV using low-temperature photoluminescence (PL), ranging from 30 to 200 K. Additionally, we demonstrate the ability to extend this synthetic protocol to form a polytype structure comprised of a ZB core with a WZ shell