Professional burnout of medical workers in the era of the COVID-19 pandemic as a risk factor for mental health

The paper presents an analysis of the literature on the problem of professional burnout syndrome in medical workers, presented in the Scientific Electronic Library (eLibrary), as well as in the English-language text database of medical and biological publications PubMed. The novel coronavirus infection pandemic is associated with many factors contributing to formation and development of professional burnout in medical workers. The risk factors are: high workload, lack of PPE, threat and risk of contracting a new coronavirus infection, social isolation, insufficiency (at the first stage) of accumulated knowledge about the new little-studied disease

Modeling and simulation of polycrystalline ZnO thin-film transistors

Thin film transistors (TFTs) made of transparent channel semiconductors such as ZnO are of great technological importance, because their insensitivity to visible light makes device structures simple. In fact, several demonstrations are made on ZnO TFT achieving reasonably good field effect mobilities of 1-10 cm2/Vs, but reveal insufficient device performances probably due to the presence of dense grain boundaries. We have modeled grain boundaries in ZnO thin film transistors (TFTs) and performed device simulation using a two-dimensional device simulator for understanding the grain boundary effects on the device performance. Actual polycrystalline ZnO TFT modeling is commenced with considering a single grain boundary in the middle of the TFT channel formulating with a Gaussian defect distribution localized in the grain boundary. A double Shottky barrier is formed in the grain boundary and its barrier height are analyzed as functions of defect density and gate bias. The simulation is extended to the TFTs with many grain boundaries to quantitatively analyze the potential profiles developed along the channel. One of the big contrasts of polycrystalline ZnO TFT compared with a polycrystalline Si TFT is that much smaller nanoscaled grain size induces heavy overlap of double Shottky barriers. Through the simulation, we can estimate the total trap state density localized in the grain boundaries for a polycrystalline ZnO by knowing apparent mobility and grain size in the device.Comment: Submitted to Journal of Applied Physic