An Interview on Leadership with Al Carey, CEO, PepsiCo Beverages

Paul T. Barrett, PhD, CPA, is dean and professor of business for the College of Business and Economics, Longwood University, Farmville, VA 23909. James C. Haug, DBA, is associate professor of management, Longwood University, College of Business and Economics, Farmville, VA 23909. John N. Gaskins, PhD, currently serves as associate professor of marketing and retailing, Longwood University, College of Business and Economics, Farmville, VA 23909

Validation of the Wiedemann-Franz Law in solid and molten tungsten above 2000 K through thermal conductivity measurements via steady state temperature differential radiometry

We measure the thermal conductivity of solid and molten tungsten using Steady State Temperature Differential Radiometry. We demonstrate that the thermal conductivity can be well described by application of Wiedemann-Franz Law to electrical resistivity data, thus suggesting the validity of Wiedemann-Franz Law to capture the electronic thermal conductivity of metals in their molten phase. We further support this conclusion using ab initio molecular dynamics simulations with a machine-learned potential. Our results show that at these high temperatures, the vibrational contribution to thermal conductivity is negligible compared to the electronic component

Interface Controlled Thermal Resistances of Ultra-Thin Chalcogenide-Based Phase Change Memory Devices

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data processing to overcome the von Neumann bottleneck. In PCMs, data storage is driven by thermal excitation. However, there is limited research regarding PCM thermal properties at length scales close to the memory cell dimensions. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in interfacial thermal resistance as GST transitions from cubic to hexagonal crystal structure, resulting in a factor of 4 reduction in the effective thermal conductivity. Simulations reveal that interfacial resistance between PCM and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~ 40% and ~ 50%, respectively. These thermal insights present a new opportunity to reduce power and operating currents in PCMs

On the thermal and mechanical properties of Mg0.2_{0.2}Co0.2_{0.2}Ni0.2_{0.2}Cu0.2_{0.2}Zn0.2_{0.2}O across the high-entropy to entropy-stabilized transition

As various property studies continue to emerge on high entropy and entropy-stabilized ceramics, we seek further understanding of property changes across the phase boundary between \enquote{high-entropy} and \enquote{entropy-stabilized}. The thermal and mechanical properties of bulk ceramic entropy stabilized oxide composition Mg$_{0.2}$Co$_{0.2}$Ni$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$O are investigated across this critical transition temperature via the transient plane-source method, temperature-dependent X-ray diffraction, and nano-indentation. Thermal conductivity remains constant within uncertainty across the multi-to-single phase transition at a value of ~2.5 W/mK, while the linear coefficient of thermal expansion increases nearly 24 % from 10.8 to 14.1 x 10$^{-6}$ K$^{-1}$. Mechanical softening is also observed across the transition.Comment: 14 pages, 4 figures, to be published in APL Material

Hybridization from Guest-Host Interactions Reduces the Thermal Conductivity of Metal-Organic Frameworks

We experimentally and theoretically investigate the thermal conductivity and mechanical properties of polycrystalline HKUST-1 metal–organic frameworks (MOFs) infiltrated with three guest molecules: tetracyanoquinodimethane (TCNQ), 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), and (cyclohexane-1,4-diylidene)dimalononitrile (H4-TCNQ). This allows for modification of the interaction strength between the guest and host, presenting an opportunity to study the fundamental atomic scale mechanisms of how guest molecules impact the thermal conductivity of large unit cell porous crystals. The thermal conductivities of the guest@MOF systems decrease significantly, by on average a factor of 4, for all infiltrated samples as compared to the uninfiltrated, pristine HKUST-1. This reduction in thermal conductivity goes in tandem with an increase in density of 38% and corresponding increase in heat capacity of ∼48%, defying conventional effective medium scaling of thermal properties of porous materials. We explore the origin of this reduction by experimentally investigating the guest molecules’ effects on the mechanical properties of the MOF and performing atomistic simulations to elucidate the roles of the mass and bonding environments on thermal conductivity. The reduction in thermal conductivity can be ascribed to an increase in vibrational scattering introduced by extrinsic guest-MOF collisions as well as guest molecule-induced modifications to the intrinsic vibrational structure of the MOF in the form of hybridization of low frequency modes that is concomitant with an enhanced population of localized modes. The concentration of localized modes and resulting reduction in thermal conductivity do not seem to be significantly affected by the mass or bonding strength of the guest species

Carbon‐Enriched Amorphous Hydrogenated Boron Carbide Films for Very‐Low‐k Interlayer Dielectrics

A longstanding challenge in ultralarge‐scale integration has been the continued improvement in low‐dielectric‐constant (low‐k) interlayer dielectric materials and other specialized layers in back‐end‐of‐the‐line interconnect fabrication. Modeled after the success of carbon‐containing organosilicate materials, carbon‐enriched amorphous hydrogenated boron carbide (a‐BxC:Hy) films are grown by plasma‐enhanced chemical vapor deposition from ortho‐carborane and methane. These films contain more extraicosahedral sp3 hydrocarbon groups than nonenriched a‐BxC:Hy films, as revealed by FTIR and NMR spectroscopy, and also exhibit lower dielectric constants than their nonenriched counterparts, notably due to low densities combined with a low distortion and orientation contribution to the total polarizability. Films with dielectric constant as low as 2.5 are reported with excellent electrical stability (leakage current of 10−9 A cm−2 at 2 MV cm−1 and breakdown voltage of >6 MV cm−1), good thermal conductivity of 0.31 ± 0.03 W m−1 K−1, and high projected Young’s modulus of 12 ± 3 GPa. These properties rival those of leading SiOC:H materials, and position a‐BxC:Hy as an important complement to traditional Si‐based materials to meet the complex needs of next‐generation interconnect fabrication.Carbon‐enriched amorphous hydrogenated boron carbide films are demonstrated with dielectric constant (k) as low as 2.5—attributed to low densities combined with network‐rigidifying CH2 bridging groups—as well as excellent electrical, thermal, and mechanical properties, rivaling those of state‐of‐the‐art silicon‐based low‐k dielectric materials.Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/141869/1/aelm201700116_am.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/141869/2/aelm201700116.pd