Induction Charge Detector with Multiple Sensing Stages

An induction charge detector with multiple sensing stages has been conceived for use in characterizing sprayed droplets, dust particles, large ionized molecules, and the like. Like related prior single-stage devices, each stage yields a measurement of the electric charge and the time of flight of the particle. In effect, an n-stage sensor yields n independent sets of such measurements from the same particle. The benefit of doing this is to increase the effective signal-to-noise ratio and thereby lower the charge-detection limit and the standard error of the charge measurement

Pulsed Operation of an Ion Accelerator

Electronic circuitry has been devised to enable operation of an ion accelerator in either a continuous mode or a highpeak power, low-average-power pulsed mode. In the original intended application, the ion accelerator would be used as a spacecraft thruster and the pulse mode would serve to generate small increments of impulse for precise control of trajectories and attitude. The present electronic drive circuitry generates the extraction voltage in pulses. Pulse-width modulation can affect rapid, fine control of time-averaged impulse or ion flux down to a minimum level much lower than that achievable in continuous operation

Pulsed hall thruster system

A pulsed Hall thruster system includes a Hall thruster having an electron source, a magnetic circuit, and a discharge chamber; a power processing unit for firing the Hall thruster to generate a discharge; a propellant storage and delivery system for providing propellant to the discharge chamber and a control unit for defining a pulse duration .tau.<0.1d.sup.3.rho./m, where d is the characteristic size of the thruster, .rho. is the propellant density at standard conditions, and m is the propellant mass flow rate for operating either the power processing unit to provide to the Hall thruster a power pulse of a pre-selected duration, .tau., or operating the propellant storage and delivery system to provide a propellant flow pulse of duration, .tau., or providing both as pulses, synchronized to arrive coincidentally at the discharge chamber to enable the Hall thruster to produce a discreet output impulse

Hybrid-PIC Computer Simulation of the Plasma and Erosion Processes in Hall Thrusters

HPHall software simulates and tracks the time-dependent evolution of the plasma and erosion processes in the discharge chamber and near-field plume of Hall thrusters. HPHall is an axisymmetric solver that employs a hybrid fluid/particle-in-cell (Hybrid-PIC) numerical approach. HPHall, originally developed by MIT in 1998, was upgraded to HPHall-2 by the Polytechnic University of Madrid in 2006. The Jet Propulsion Laboratory has continued the development of HPHall-2 through upgrades to the physical models employed in the code, and the addition of entirely new ones. Primary among these are the inclusion of a three-region electron mobility model that more accurately depicts the cross-field electron transport, and the development of an erosion sub-model that allows for the tracking of the erosion of the discharge chamber wall. The code is being developed to provide NASA science missions with a predictive tool of Hall thruster performance and lifetime that can be used to validate Hall thrusters for missions

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409 nm/min for SiC and 2381 nm/min for GaSb. The maximum sputtering rate for GaN is 630 nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2 nm and 20 nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60 nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409 nm/min for SiC and 2381 nm/min for GaSb. The maximum sputtering rate for GaN is 630 nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2 nm and 20 nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60 nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target