Selected isotope ratio measurements of light metallic elements (Li, Mg, Ca, and Cu) by multiple collector ICP-MS

The unique capabilities of multiple collector inductively coupled mass spectrometry (MC-ICP-MS) for high precision isotope ratio measurements in light elements as Li, Mg, Ca, and Cu are reviewed in this paper. These elements have been intensively studied at the Geological Survey of Israel (GSI) and other laboratories over the past few years, and the methods used to obtain high precision isotope analyses are discussed in detail. The scientific study of isotopic fractionation of these elements is significant for achieving a better understanding of geochemical and biochemical processes in nature and the environment

Analysis of opo cis-regulatory landscape uncovers Vsx2 requirement in early eye morphogenesis

The self-organized morphogenesis of the vertebrate optic cup entails coupling the activation of the retinal gene regulatory network to the constriction-driven infolding of the retinal epithelium. Yet the genetic mechanisms underlying this coordination remain largely unexplored. Through phylogenetic footprinting and transgenesis in zebrafish, here we examine the cis-regulatory landscape of opo, an endocytosis regulator essential for eye morphogenesis. Among the different conserved enhancers identified, we isolate a single retina-specific element (H6_10137) and show that its activity depends on binding sites for the retinal determinant Vsx2. Gain- and loss-of-function experiments and ChIP analyses reveal that Vsx2 regulates opo expression through direct binding to this retinal enhancer. Furthermore, we show that vsx2 knockdown impairs the primary optic cup folding. These data support a model by which vsx2, operating through the effector gene opo, acts as a central transcriptional node that coordinates neural retina patterning and optic cup invagination in zebrafish.info:eu-repo/semantics/publishedVersio

New BIMOS transistor in 28nm FDSOI technology: Operation in 4-Gate JFET mode

International audienceIn this paper, we introduce a new BIMOS transistor fabricated with 28nm high-k metal-gate FDSOI UTBB technology. The device is highly flexible and reconfigurable as it can be operated in MOS, Bipolar, Hybrid and 4-Gate modes. We investigate the bias conditions for JFET-like operation and show promising performance even in structures with ultrathin Si film

BIMOS transistor in thin silicon film and new solutions for ESD protection in FDSOI UTBB CMOS technology

session 2: POwer Devices and ESD ProtectionInternational audienceThe purpose of this study is to evaluate the ESD protection behavior using BIMOS transistors integrated in ultrathin silicon film for 28 nm FDSOI UTBB high-k metal gate technology. Using as a reference our measurements in hybrid bulk structures we extend the BIMOS design towards the ultrathin silicon film. Evaluations are done based on 3D TCAD simulation with standard physical models using ACS method and quasi-static DC stress (AVS method)

10Gbps Length adaptive on-chip RF serial link for Network on Chips and Multiprocessor chips applications

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Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET

International audienceThe supercoupling effect is demonstrated experimentally by monitoring the electron and hole currents in a field-effect transistor provided with p+ and n+ contacts. According to the polarity of the voltage applied to the front and back gates, only electrons or holes can be detected in 7-nm thick silicon layers. Thicker layers are not affected by supercoupling and can accommodate electrons and holes together

GDNMOS: A new high voltage device for ESD protection in 28nm UTBB FD-SOI technology

session 11: Advanced DevicesInternational audienceWe propose a novel device (GDNMOS: Gated Diode merged NMOS) fabricated with 28nm UTBB FD-SOI high-k metal gate technology. Variable electrostatic doping (gate-induced) in diode and transistor body enables reconfigurable operation, in particular in thyristor mode. This innovative architecture demonstrates excellent capability for high-voltage protection while maintaining a latch-up free behavior

Distribution spatiale des photons UV dans une cellule d'écran à plasma

Nous avons développé un modèle numérique basé sur une méthode de Monte-Carlo, permettant de suivre, dans une cellule d'écrans à plasmas, le trajet des photons UV responsables de l'émission de la lumière visible. Nous considérons pour cela un schéma cinétique simplifié permettant de créer ou de détruire de nouveaux photons. Nous présentons les résultats obtenus en fonction de la concentration de Xe dans le mélange Ne/Xe