Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks

GeSn alloys with Sn contents of 8.4 % and 10.7 % are grown pseudomorphically on Ge buffers on Si (001) substrates. The alloys as-grown are compressively strained, and therefore indirect bandgap. Undercut GeSn on Ge microdisk structures are fabricated and strained by silicon nitride stressor layers, which leads to tensile strain in the alloys, and direct bandgap photoluminescence in the 3–5 µm gas sensing window of the electromagnetic spectrum. The use of pseudomorphic layers and external stress mitigates the need for plastic deformation to obtain direct bandgap alloys. It is demonstrated, that the optically pumped light emission overlaps with the methane absorption lines, suggesting that GeSn alloys are well suited for mid-infrared integrated gas sensors on Si chips

Ohmic contacts to n-type germanium with low specific contact resistivity

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) x10<sup>-7</sup> Ω-cm<sup>2</sup> for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.<p></p&gt

Pepper-pot emittance measurement of laser-plasma wakefield accelerated electrons

The transverse emittance is an important parameter governing the brightness of an electron beam. Here we present the first pepper-pot measurement of the transverse emittance for a mono-energetic electron beam from a laser-plasma wakefield accelerator, carried out on the Advanced Laser-Plasma High Energy Accelerators towards X-Rays (ALPHA-X) beam line. Mono-energetic electrons are passed through an array of 52 mu m diameter holes in a tungsten mask. The pepper-pot results set an upper limit for the normalised emittance at 5.5 +/- 1 pi mm mrad for an 82 MeV beam

Tensile Strained GeSn Mid-Infrared Light Emitters

Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into microdisks and strained using silicon nitride stressors. The strained disks are measured to be tensile by Raman spectroscopy, and demonstrate direct bandgap emission in the 3-5 μm gas sensing window

Mid-Infrared Plasmonic Platform Based on n-Doped Ge-on-Si: Molecular Sensing with Germanium Nano-Antennas on Si

CMOS-compatible, heavily-doped semiconductor films are very promising for applications in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate n-type doped germanium epilayers grown on Si substrates. We design and realize Ge nanoantennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit them for molecular sensing in the mid-infrared

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm

The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm−3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm−3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved

Hyper-arid tall shrub species have differing long-term responses to browsing management

© 2019, © 2019 Taylor & Francis Group, LLC. Hyper-arid rangeland vegetation is typically dominated by large woody species which are often overlooked in herbivory studies. Long-term responses of tall shrub populations to herbivory change are poorly understood in the Arabian Peninsula. Population and size of 1559 individuals from four shrub species were assessed over an 11-year period under two herbivory regimes, one in which domestic livestock (camels) were replaced by semi-wild ungulates (Oryx and gazelles) before, and the other during, the study period. Each shrub species exhibited a different response to the change in herbivory. Populations of Calotropis procera decreased dramatically. Populations of both Calligonum polygonoides and Lycium shawii increased through sexual reproduction, but the spatial distribution of recruits indicated different modes of seed dispersal. Average lifespans were estimated at 22 and 20years respectively. The persistence strategy of Leptadenia pyrotechnica was similar to tree species of this habitat in that vegetative regrowth was prioritized over recruitment, and average lifespan was estimated at 95years. Shrub responses to changes in ungulate management are therefore species-specific. The response of individual plant size was faster than the response of population size, which was limited by slow sexual recruitment (L. pyrotechnica) or localized seed dispersal (C. polygonoides)

Gender, foundation degrees and the knowledge economy

This article questions the concept of ‘education for employment’, which constructs a discourse of individual and societal benefit in a knowledge‐driven economy. Recent policy emphasis in the European Union promotes the expansion of higher education and short‐cycle vocational awards such as the intermediate two‐year Foundation Degree recently introduced into England and Wales. Studies of vocational education and training (VET) and the knowledge economy have focused largely on the governance of education and on the development and drift of policy. Many VET programmes have also been considered for their classed, raced and gendered take‐up and subsequent effect on employment. This article builds on both fields of study to engage with the finer cross‐analyses of gender, social class, poverty, race and citizenship. In its analysis of policy texts the article argues that in spite of a discourse of inclusivity, an expanded higher education system has generated new inequalities, deepening social stratification. Drawing on early analyses of national quantitative data sets, it identifies emerging gendered, classed and raced patterns and considers these in relation to occupationally and hierarchically stratified labour markets, both within and without the knowledge economy