Photoluminescence enhancement of ZnO via coupling with surface plasmons on Al thin films

We present that the ultra-violet emission of ZnO can be enhanced, as much as six-times its integral intensity, using an Al thin interlayer film between the Si substrate and ZnO thin film and a postfabrication laser annealing process. The laser annealing is a cold process that preserves the chemical state and integrity of the underlying aluminum layer, while it is essential for the improvement of the ZnO performance as a light emitter and leads to enhanced emission in the visible and in the ultraviolet spectral ranges. In all cases, the metal interlayer enhances the intensity of the emitted light, either through coupling of the surface plasmon that is excited at the Al/ZnO interface, in the case of light-emitting ZnO in the ultraviolet region, or by the increased back reflection from the Al layer, in the case of the visible emission. In order to evaluate the process and develop a solid understanding of the relevant physical phenomena, we investigated the effects of various metals as interlayers (Al, Ag, and Au), the metal interlayer thickness, and the incorporation of a dielectric spacer layer between Al and ZnO. Based on these experiments, Al emerged as the undisputable best choice of metal interlayers because of its compatibility with the laser annealing process, as well as due to its high optical reflectivity at 380 and 248 nm, which leads to the effective coupling with surface plasmons at the Al/ZnO interfaces at 380 nm and the secondary annealing of ZnO by the back-reflected 248 nm laser beam

Laser-driven structural modifications and diffusion phenomena of plasmonic AlN/Ag stratified films

Laser annealing (LA) of AlN/Ag multilayers was proven to be an effective process to control the structure and dispersion of Ag into the AlN resulting in intense coloration via the localized surface plasmon resonance, which is of particular importance for decorative applications. In this work we present a study of the structural changes occurring in various AlN/Ag multilayers after LA, in an effort to establish firm knowledge of the diffusion and re-nucleation mechanisms that occur during the laser process. We investigate the effect of the basic LA parameters, such as the laser wavelength (193 and 248 nm), fluence (400–700 mJ/cm2), pressure (1 and 10 Bar) and number of pulses (1 and 2) and we show that the main processes is the Ag particle enhancement close to the film surface as a result of additive outidiffusion Ag and the formation of nanoparticles of varying size

Chemical composition of nanoporous layer formed by electrochemical etching of p-type GaAs

Abstract : We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate

Exploring the Leidenfrost Effect for the Deposition of High-Quality In<inf>2</inf>O<inf>3</inf> Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

The growth mechanism of indium oxide (In2O3) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100–300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline In2O3 layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of In2O3 are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized In2O3 layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm2 V−1 s−1, a value amongst the highest reported to date for solution-processed In2O3 TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics