Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well

AbstractIn this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000Å up to 3000Å) were investigated by means of photoluminescence (PL) measurements. In order to achieve the 2DEG inside the PQW Si delta doping is placed at both side of the well. We have observed that the thickness of this space layer plays a major rule on the characteristics of the 2DEG. It has to be thicker enough to prevent any diffusions of Si to the well and thin enough to allow electrons migration inside the well. From PL measurement, we have observed beside the intra well transitions, indirect transitions involving still trapped electron on the delta doping and holes inside the PQW. For the thinness sample, we have measured a well defined PL peak at low energy side of the GaAs bulk emission. With the increasing of the well thickness this peak intensity decreases and for the thickest sample it almost disappears. Our theoretical calculation indicated that carriers (electron and holes) are more placed at the center of the PQW. In this way, when the well thickness increases the distance between electrons on the delta doping and holes on the well also increases, it decreases the probability of occurrence of these indirect optical transitions

Quasiclassical magnetotransport in a random array of antidots

We study theoretically the magnetoresistance $\rho_{xx}(B)$ of a two-dimensional electron gas scattered by a random ensemble of impenetrable discs in the presence of a long-range correlated random potential. We believe that this model describes a high-mobility semiconductor heterostructure with a random array of antidots. We show that the interplay of scattering by the two types of disorder generates new behavior of $\rho_{xx}(B)$ which is absent for only one kind of disorder. We demonstrate that even a weak long-range disorder becomes important with increasing $B$. In particular, although $\rho_{xx}(B)$ vanishes in the limit of large $B$ when only one type of disorder is present, we show that it keeps growing with increasing $B$ in the antidot array in the presence of smooth disorder. The reversal of the behavior of $\rho_{xx}(B)$ is due to a mutual destruction of the quasiclassical localization induced by a strong magnetic field: specifically, the adiabatic localization in the long-range Gaussian disorder is washed out by the scattering on hard discs, whereas the adiabatic drift and related percolation of cyclotron orbits destroys the localization in the dilute system of hard discs. For intermediate magnetic fields in a dilute antidot array, we show the existence of a strong negative magnetoresistance, which leads to a nonmonotonic dependence of $\rho_{xx}(B)$.Comment: 21 pages, 13 figure

Finite-temperature Fermi-edge singularity in tunneling studied using random telegraph signals

We show that random telegraph signals in metal-oxide-silicon transistors at millikelvin temperatures provide a powerful means of investigating tunneling between a two-dimensional electron gas and a single defect state. The tunneling rate shows a peak when the defect level lines up with the Fermi energy, in excellent agreement with theory of the Fermi-edge singularity at finite temperature. This theory also indicates that defect levels are the origin of the dissipative two-state systems observed previously in similar devices.Comment: 5 pages, REVTEX, 3 postscript figures included with epsfi

Magnetotransport in a spatially modulated magnetic field

Duport Adrien Jean. Lecture de deux premiers articles du titre 1 de l'institution des officiers de police, lors de la séance du 28 décembre 1790. In: Archives Parlementaires de 1787 à 1860 - Première série (1787-1799) Tome XXI - Du 26 novembre 1790 au 2 janvier 1791. Paris : Librairie Administrative P. Dupont, 1885. p. 692

Measurement of \Gamma_{ee}(J/\psi)*Br(J/\psi->e^+e^-) and \Gamma_{ee}(J/\psi)*Br(J/\psi->\mu^+\mu^-)

The products of the electron width of the J/\psi meson and the branching fraction of its decays to the lepton pairs were measured using data from the KEDR experiment at the VEPP-4M electron-positron collider. The results are \Gamma_{ee}(J/\psi)*Br(J/\psi->e^+e^-)=(0.3323\pm0.0064\pm0.0048) keV, \Gamma_{ee}(J/\psi)*Br(J/\psi->\mu^+\mu^-)=(0.3318\pm0.0052\pm0.0063) keV. Their combinations \Gamma_{ee}\times(\Gamma_{ee}+\Gamma_{\mu\mu})/\Gamma=(0.6641\pm0.0082\pm0.0100) keV, \Gamma_{ee}/\Gamma_{\mu\mu}=1.002\pm0.021\pm0.013 can be used to improve theaccuracy of the leptonic and full widths and test leptonic universality. Assuming e\mu universality and using the world average value of the lepton branching fraction, we also determine the leptonic \Gamma_{ll}=5.59\pm0.12 keV and total \Gamma=94.1\pm2.7 keV widths of the J/\psi meson.Comment: 7 pages, 6 figure

Search for narrow resonances in e+ e- annihilation between 1.85 and 3.1 GeV with the KEDR Detector

We report results of a search for narrow resonances in e+ e- annihilation at center-of-mass energies between 1.85 and 3.1 GeV performed with the KEDR detector at the VEPP-4M e+ e- collider. The upper limit on the leptonic width of a narrow resonance Gamma(R -> ee) Br(R -> hadr) < 120 eV has been obtained (at 90 % C.L.)

Measurement of main parameters of the \psi(2S) resonance

A high-precision determination of the main parameters of the \psi(2S) resonance has been performed with the KEDR detector at the VEPP-4M e^{+}e^{-} collider in three scans of the \psi(2S) -- \psi(3770) energy range. Fitting the energy dependence of the multihadron cross section in the vicinity of the \psi(2S) we obtained the mass value M = 3686.114 +- 0.007 +- 0.011 ^{+0.002}_{-0.012} MeV and the product of the electron partial width by the branching fraction into hadrons \Gamma_{ee}*B_{h} = 2.233 +- 0.015 +- 0.037 +- 0.020 keV. The third error quoted is an estimate of the model dependence of the result due to assumptions on the interference effects in the cross section of the single-photon e^{+}e^{-} annihilation to hadrons explicitly considered in this work. Implicitly, the same assumptions were employed to obtain the charmonium leptonic width and the absolute branching fractions in many experiments. Using the result presented and the world average values of the electron and hadron branching fractions, one obtains the electron partial width and the total width of the \psi(2S): \Gamma_{ee} =2.282 +- 0.015 +- 0.038 +- 0.021 keV, \Gamma = 296 +- 2 +- 8 +- 3 keV. These results are consistent with and more than two times more precise than any of the previous experiments

Shubnikov-de haas effect in tilted magnetic fields in wide quantum well

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