Pattern formation resulting from faceted growth in zone-melted thin films

We develop a model for the recrystallization of Si films that are traversed by a molten zone. The model simulates the branching behavior of low-angle grain-boundary defects in these films to a remarkable degree. The simulated subboundary patterns scale approximately as the square root of the scan velocity, in excellent agreement with experiment.FWN – Publicaties zonder aanstelling Universiteit Leide

Crossover effects in the Wolf-Villain model of epitaxial growth in 1+1 and 2+1 dimensions

A simple model of epitaxial growth proposed by Wolf and Villain is investigated using extensive computer simulations. We find an unexpectedly complex crossover behavior of the original model in both 1+1 and 2+1 dimensions. A crossover from the effective growth exponent $\beta_{\rm eff}\!\approx\!0.37$ to $\beta_{\rm eff}\!\approx\!0.33$ is observed in 1+1 dimensions, whereas additional crossovers, which we believe are to the scaling behavior of an Edwards--Wilkinson type, are observed in both 1+1 and 2+1 dimensions. Anomalous scaling due to power--law growth of the average step height is found in 1+1 D, and also at short time and length scales in 2+1~D. The roughness exponents $\zeta_{\rm eff}^{\rm c}$ obtained from the height--height correlation functions in 1+1~D ($\approx\!3/4$) and 2+1~D ($\approx\!2/3$) cannot be simultaneously explained by any of the continuum equations proposed so far to describe epitaxial growth.Comment: 11 pages, REVTeX 3.0, IC-DDV-93-00

Unconventional MBE Strategies from Computer Simulations for Optimized Growth Conditions

We investigate the influence of step edge diffusion (SED) and desorption on Molecular Beam Epitaxy (MBE) using kinetic Monte-Carlo simulations of the solid-on-solid (SOS) model. Based on these investigations we propose two strategies to optimize MBE growth. The strategies are applicable in different growth regimes: During layer-by-layer growth one can exploit the presence of desorption in order to achieve smooth surfaces. By additional short high flux pulses of particles one can increase the growth rate and assist layer-by-layer growth. If, however, mounds are formed (non-layer-by-layer growth) the SED can be used to control size and shape of the three-dimensional structures. By controlled reduction of the flux with time we achieve a fast coarsening together with smooth step edges.Comment: 19 pages, 7 figures, submitted to Phys. Rev.

Point defect production, geometry and stability in silicon: A molecular dynamics simulation study

We present results of molecular dynamics computer simulation studies of the threshold energy for point defect production in silicon. We employ computational cells with 8000 atoms at ambient temperature of 10 K that interact via the Stillinger-Weber potential. Our simulations address the orientation dependence of the defect production threshold as well as the structure and stability of the resulting vacancy-interstitial pairs. Near the directions, a vacancy tetrahedral-interstitial pair is produced for 25 eV recoils. However, at 30 eV recoil energy, the resulting interstitial is found to be the split dumbbell configuration. This Frenkel pair configuration is lower in energy than the former by 1.2 eV. Moreover, upon warming of the sample from 10 K the tetrahedral interstitial converts to a split before finally recombining with the vacancy. Along directions, a vacancy- split interstitial configuration is found at the threshold energy of 22 eV. Near directions, a wide variety of closed replacement chains are found to occur for recoil energies up to 45 eV. At 45 eV, the low energy vacancy- split configuration is found. At 300 K, the results are similar. We provide details on the atomic structure and relaxations near these defects as well as on their mobilities

Pattern Formation Resulting from Faceted Growth in Zone Melted Thin Films

Wetensch. publicatieFaculteit der Wiskunde en Natuurwetenschappe

Growth and Structure of Metallic Barrier Layer and Interconnect Films I: Experiments

We present experimented results directed at understanding the growth and structure of metallic barrier layer and interconnect films. Numerical simulation results associated with this experimental work are presented in an accompanying paper in these proceedings. Here, thin films of Al, Ti, Cu and Ta have been grown by magnetron sputtering onto oxidized Si substrates. Using a specially-constructed substrate holder, the orientation of the substrate with respect to the growth direction was varied from horizontal to vertical. Films were grown at both low and high argon pressure; in the case of Ta, the cathode power was varied as well. The film structure and in particular the surface roughness was measured by X-ray reflectance and also by atomic force microscopy. We find that the surface roughness increases markedly with orientation angle in the case of Ta and Cu films, and in Ti films grown at high argon pressure. At low pressure, however, the Ti film surface roughness remains constant for all substrate orientations. No variation in roughness with either orientation angle or argon pressure was observed in the Al films. These results suggest that, under certain circumstances, shadowing effects and/or grain orientation (i.e., texture) competition during growth can give rise to lower density, more porous (and thus more rough) films, particularly at large orientation angles, as on sidewalls in sub-micron trenches