2,070 research outputs found
Safe abortion – Still a neglected scenario: A study of septic abortions in a tertiary hospital of Rural India
Background and Aims: In spite abortion has been legalized in India over three decades, unsafe abortion continues to be a significant contributor of maternal mortality and morbidity. The aim of the present study is to assess the magnitude of septic abortion in a tertiary care hospital over a period of three years with a special emphasis on maternal mortality and morbidity and various surgical complications. Settings and Design: Retrospective study of patients who were admitted with unsafe abortions over a three year period from 2005 to 2008 in a tertiary teaching Hospital of Rural India. Materials and Methods: Hospital records of the patients who were admitted with unsafe abortion in three years (2005-2008) were reviewed to evaluate the demographic and clinical profile in relation to age, parity, marital status, indication of abortion , the methods of abortion ,qualification of abortion provider complications and maternal mortality. Results: Unsafe abortion constitutes 11.6% ( n=132) of total abortion cases admitted over 3 years. Majority of women (70.45%) were in their thirties, married (89%).Sixty percent wanted abortion for birth spacing. Abortion methods included various primitive methods (30%) but majority by dilatation and evacuation. About 60% of abortionists were unqualified. Majority of women admitted with serious complications like peritonitis (70%), visceral injuries (60%), hemorrhagic and septic shock, renal failure (17.4%), and life threatening conditions like DIC, hepatic failure and encephalopathy. A total of 231 women died of unsafe abortion making it 12.55% of total maternal mortality in our institution. Out of 73 women requiring laparotomy, 22% were done within 24 hours of admission and majority (49%) were performed beyond 24-48 hours. Interestingly no women died when early aggressive surgery was done. Conclusion: The present study confirms that unsafe abortion is a great neglected health care problem leading to a considerable loss of maternal lives. Education and accessibility of contra caption, readily available, quality abortion services by trained abortion providers remain the key to limit mortality and morbidity arising from unsafe abortion
Symmetry crossover and excitation thresholds at the neutral-ionic transition of the modified Hubbard model
Exact ground states, charge densities and excitation energies are found using
valence bond methods for N-site modified Hubbard models with uniform spacing.
At the neutral-ionic transition (NIT), the ground state has a symmetry
crossover in 4n, 4n+2 rings with periodic and antiperiodic boundary conditions,
respectively. The modified Hubbard model has a continuous NIT between a
diamagnetic band insulator on the paired side and a paramagnetic Mott insulator
on the covalent side. The singlet-triplet (ST), singlet-singlet (SS) and charge
gaps for finite N indicate that the ST and SS gaps close at the NIT with
increasing U and that the charge gap vanishes only there. Finite-N excitations
constrain all singularities to about 0.1t of the symmetry crossover. The NIT is
interpreted as a localized ground state (gs) with finite gaps on the paired
side and an extended gs with vanishing ST and SS gaps on the covalent side. The
charge gap and charge stiffness indicate a metallic gs at the transition that,
however, is unconditionally unstable to dimerization.Comment: 12 pages, including 8 figure
Elementary Particles and Spin Representations
We emphasize that the group-theoretical considerations leading to SO(10)
unification of electro-weak and strong matter field components naturally extend
to space-time components, providing a truly unified description of all
generation degrees of freedoms in terms of a single chiral spin representation
of one of the groups SO(13,1), SO(9,5), SO(7,7) or SO(3,11). The realization of
these groups as higher dimensional space-time symmetries produces unification
of all fundamental fermions is a single space-time spinor.Comment: 4 page
Two dimensional analytical threshold voltage modeling of dual material gate S-SOI mosfet
MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is the one of the most important and widely used semiconductor devices used in industry for various proposes. Two most important advantages of MOSFETs are their extremely low power dissipation and small area required for fabrication, i.e high packing density .With the advance of technology the feature sizes of MOSFETs are reduced continuously to increase the packing density of very large scale integration (VLSI) circuits. With continuous shrinkage of device geometrics on threshold voltage causes strong deviations from long channel behavior. The effect of such decrease in channel length is called SCE (Short channel Effect). A two dimensional Poisson equation needs to be solved in order to understand the effect of SCE.SCE (Short Channel Effect) is the effect of reduction in the channel length of MOSFET which results in significant differences from ideal characteristic like channel length modulation, carrier velocity saturation, two dimensional charge sharing, drain induced barrier lowering (DIBL), drain source series resistance and punch through. In order to minimize the effect of short channel effect various different modeling has been introduced. Among them DG MOSFET (Double Gate MOSFET), SOI MOSFET (Silicon-On Insulator MOSFET) are particularly important. In this thesis, a two dimensional threshold voltage model is developed for a Dual Material Gate Fully Depleted Strained Silicon on Insulator (DMG-FD-S-SOI) MOSFET considering the interface trap charges. The interface trap charges during the pre and post fabrication process are a common phenomenon, and these charges can’t be neglected in nano scale devices. For finding out the surface potential, parabolic approximation is utilized to solve 2D Poisson’s equation in the channel region. Further, the virtual cathode potential method is used to formulate the threshold voltage
Origin of negative differential resistance in a strongly coupled single molecule-metal junction device
A new mechanism is proposed to explain the origin of negative differential
resistance (NDR) in a strongly coupled single molecule-metal junction. A
first-principles quantum transport calculation in a Fe-terpyridine linker
molecule sandwiched between a pair of gold electrodes is presented. Upon
increasing applied bias, it is found that a new phase in the broken symmetry
wavefunction of the molecule emerges from the mixing of occupied and unoccupied
molecular orbital. As a consequence, a non-linear change in the coupling
between molecule and lead is evolved resulting to NDR. This model can be used
to explain NDR in other class of metal-molecule junction device.Comment: Submitted for review on Feb 4, 200
Mediation of Long Range Charge Transfer by Kondo Bound States
We present a theory of non-equilibrium long range charge transfer between
donor and acceptor centers in a model polymer mediated by magnetic exciton
(Kondo) bound states. Our model produces electron tunneling lengths easily
exceeding 10, as observed recently in DNA and organic charge transfer
systems. This long ranged tunneling is effective for weak to intermediate
donor-bridge coupling, and is enhanced both by weak to intermediate strength
Coulomb hole-electron attraction (through the orthogonality catastrophe) and by
coupling to local vibrational modes.Comment: Revised content (broadened scope, vibrations added), submitted to
Phys Rev Lett, added autho
Dark matter from SU(4) model
The left-right symmetric Pati-Salam model of the unification of quarks and
leptons is based on SU(4) and SU(2)xSU(2) groups. These groups are naturally
extended to include the classification of families of quarks and leptons. We
assume that the family group (the group which unites the families) is also the
SU(4) group. The properties of the 4-th generation of fermions are the same as
that of the ordinary-matter fermions in first three generations except for the
family charge of the SU(4)_F group: F=(1/3,1/3,1/3,-1), where F=1/3 for
fermions of ordinary matter and F=-1 for the 4-th generation. The difference in
F does not allow the mixing between ordinary and fourth-generation fermions.
Because of the conservation of the F charge, the creation of baryons and
leptons in the process of electroweak baryogenesis must be accompanied by the
creation of fermions of the 4-th generation. As a result the excess n_B of
baryons over antibaryons leads to the excess n_{\nu 4}=N-\bar N=n_B of
neutrinos over antineutrinos in the 4-th generation. This massive
fourth-generation neutrino may form the non-baryonic dark matter. In principle
their mass density n_{\nu 4}m_N in the Universe can give the main contribution
to the dark matter, since the lower bound on neutrino mass m_N from the data on
decay of the Z-bosons is m_N > m_Z/2. The straightforward prediction of this
model leads to the amount of cold dark matter relative to baryons, which is an
order of magnitude bigger than allowed by observations. This inconsistency may
be avoided by non-conservation of the F-charge.Comment: 9 pages, 2 figures, version accepted in JETP Letters, corrected after
referee reports, references are adde
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