Safe abortion – Still a neglected scenario: A study of septic abortions in a tertiary hospital of Rural India

Background and Aims: In spite abortion has been legalized in India over three decades, unsafe abortion continues to be a significant contributor of maternal mortality and morbidity. The aim of the present study is to assess the magnitude of septic abortion in a tertiary care hospital over a period of three years with a special emphasis on maternal mortality and morbidity and various surgical complications. Settings and Design: Retrospective study of patients who were admitted with unsafe abortions over a three year period from 2005 to 2008 in a tertiary teaching Hospital of Rural India. Materials and Methods: Hospital records of the patients who were admitted with unsafe abortion in three years (2005-2008) were reviewed to evaluate the demographic and clinical profile in relation to age, parity, marital status, indication of abortion , the methods of abortion ,qualification of abortion provider complications and maternal mortality. Results: Unsafe abortion constitutes 11.6% ( n=132) of total abortion cases admitted over 3 years. Majority of women (70.45%) were in their thirties, married (89%).Sixty percent wanted abortion for birth spacing. Abortion methods included various primitive methods (30%) but majority by dilatation and evacuation. About 60% of abortionists were unqualified. Majority of women admitted with serious complications like peritonitis (70%), visceral injuries (60%), hemorrhagic and septic shock, renal failure (17.4%), and life threatening conditions like DIC, hepatic failure and encephalopathy. A total of 231 women died of unsafe abortion making it 12.55% of total maternal mortality in our institution. Out of 73 women requiring laparotomy, 22% were done within 24 hours of admission and majority (49%) were performed beyond 24-48 hours. Interestingly no women died when early aggressive surgery was done. Conclusion: The present study confirms that unsafe abortion is a great neglected health care problem leading to a considerable loss of maternal lives. Education and accessibility of contra caption, readily available, quality abortion services by trained abortion providers remain the key to limit mortality and morbidity arising from unsafe abortion

Symmetry crossover and excitation thresholds at the neutral-ionic transition of the modified Hubbard model

Exact ground states, charge densities and excitation energies are found using valence bond methods for N-site modified Hubbard models with uniform spacing. At the neutral-ionic transition (NIT), the ground state has a symmetry crossover in 4n, 4n+2 rings with periodic and antiperiodic boundary conditions, respectively. The modified Hubbard model has a continuous NIT between a diamagnetic band insulator on the paired side and a paramagnetic Mott insulator on the covalent side. The singlet-triplet (ST), singlet-singlet (SS) and charge gaps for finite N indicate that the ST and SS gaps close at the NIT with increasing U and that the charge gap vanishes only there. Finite-N excitations constrain all singularities to about 0.1t of the symmetry crossover. The NIT is interpreted as a localized ground state (gs) with finite gaps on the paired side and an extended gs with vanishing ST and SS gaps on the covalent side. The charge gap and charge stiffness indicate a metallic gs at the transition that, however, is unconditionally unstable to dimerization.Comment: 12 pages, including 8 figure

Elementary Particles and Spin Representations

We emphasize that the group-theoretical considerations leading to SO(10) unification of electro-weak and strong matter field components naturally extend to space-time components, providing a truly unified description of all generation degrees of freedoms in terms of a single chiral spin representation of one of the groups SO(13,1), SO(9,5), SO(7,7) or SO(3,11). The realization of these groups as higher dimensional space-time symmetries produces unification of all fundamental fermions is a single space-time spinor.Comment: 4 page

Two dimensional analytical threshold voltage modeling of dual material gate S-SOI mosfet

MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is the one of the most important and widely used semiconductor devices used in industry for various proposes. Two most important advantages of MOSFETs are their extremely low power dissipation and small area required for fabrication, i.e high packing density .With the advance of technology the feature sizes of MOSFETs are reduced continuously to increase the packing density of very large scale integration (VLSI) circuits. With continuous shrinkage of device geometrics on threshold voltage causes strong deviations from long channel behavior. The effect of such decrease in channel length is called SCE (Short channel Effect). A two dimensional Poisson equation needs to be solved in order to understand the effect of SCE.SCE (Short Channel Effect) is the effect of reduction in the channel length of MOSFET which results in significant differences from ideal characteristic like channel length modulation, carrier velocity saturation, two dimensional charge sharing, drain induced barrier lowering (DIBL), drain source series resistance and punch through. In order to minimize the effect of short channel effect various different modeling has been introduced. Among them DG MOSFET (Double Gate MOSFET), SOI MOSFET (Silicon-On Insulator MOSFET) are particularly important. In this thesis, a two dimensional threshold voltage model is developed for a Dual Material Gate Fully Depleted Strained Silicon on Insulator (DMG-FD-S-SOI) MOSFET considering the interface trap charges. The interface trap charges during the pre and post fabrication process are a common phenomenon, and these charges can’t be neglected in nano scale devices. For finding out the surface potential, parabolic approximation is utilized to solve 2D Poisson’s equation in the channel region. Further, the virtual cathode potential method is used to formulate the threshold voltage

Origin of negative differential resistance in a strongly coupled single molecule-metal junction device

A new mechanism is proposed to explain the origin of negative differential resistance (NDR) in a strongly coupled single molecule-metal junction. A first-principles quantum transport calculation in a Fe-terpyridine linker molecule sandwiched between a pair of gold electrodes is presented. Upon increasing applied bias, it is found that a new phase in the broken symmetry wavefunction of the molecule emerges from the mixing of occupied and unoccupied molecular orbital. As a consequence, a non-linear change in the coupling between molecule and lead is evolved resulting to NDR. This model can be used to explain NDR in other class of metal-molecule junction device.Comment: Submitted for review on Feb 4, 200

Mediation of Long Range Charge Transfer by Kondo Bound States

We present a theory of non-equilibrium long range charge transfer between donor and acceptor centers in a model polymer mediated by magnetic exciton (Kondo) bound states. Our model produces electron tunneling lengths easily exceeding 10$\AA$, as observed recently in DNA and organic charge transfer systems. This long ranged tunneling is effective for weak to intermediate donor-bridge coupling, and is enhanced both by weak to intermediate strength Coulomb hole-electron attraction (through the orthogonality catastrophe) and by coupling to local vibrational modes.Comment: Revised content (broadened scope, vibrations added), submitted to Phys Rev Lett, added autho

Dark matter from SU(4) model

The left-right symmetric Pati-Salam model of the unification of quarks and leptons is based on SU(4) and SU(2)xSU(2) groups. These groups are naturally extended to include the classification of families of quarks and leptons. We assume that the family group (the group which unites the families) is also the SU(4) group. The properties of the 4-th generation of fermions are the same as that of the ordinary-matter fermions in first three generations except for the family charge of the SU(4)_F group: F=(1/3,1/3,1/3,-1), where F=1/3 for fermions of ordinary matter and F=-1 for the 4-th generation. The difference in F does not allow the mixing between ordinary and fourth-generation fermions. Because of the conservation of the F charge, the creation of baryons and leptons in the process of electroweak baryogenesis must be accompanied by the creation of fermions of the 4-th generation. As a result the excess n_B of baryons over antibaryons leads to the excess n_{\nu 4}=N-\bar N=n_B of neutrinos over antineutrinos in the 4-th generation. This massive fourth-generation neutrino may form the non-baryonic dark matter. In principle their mass density n_{\nu 4}m_N in the Universe can give the main contribution to the dark matter, since the lower bound on neutrino mass m_N from the data on decay of the Z-bosons is m_N > m_Z/2. The straightforward prediction of this model leads to the amount of cold dark matter relative to baryons, which is an order of magnitude bigger than allowed by observations. This inconsistency may be avoided by non-conservation of the F-charge.Comment: 9 pages, 2 figures, version accepted in JETP Letters, corrected after referee reports, references are adde