Defect concentration in clusters, created by fast-pile neutrons in n-Si (FZ, Cz)

The dependence of concentration of defects on doping level for average cluster in n-Si was calculated. It was shown that in the framework of the Gossick's model the concentration of defects for the average cluster is in inverse proportion to the square of a cluster radius. One obtains the size distribution of defect clusters created by fast neutrons of WWR-M reactor, by the transformation of energy spectrum of the primary knock-on atom in n-Si (FZ, Cz). Threshold energy of defect clusters formation 4.7 keV by comparing n-Si crystals irradiated by deuterons and fast-pile neutrons was calculated

Russia’s Legal Transitions: Marxist Theory, Neoclassical Economics and the Rule of Law

We review the role of economic theory in shaping the process of legal change in Russia during the two transitions it experienced during the course of the twentieth century: the transition to a socialist economy organised along the lines of state ownership of the means of production in the 1920s, and the transition to a market economy which occurred after the fall of the Soviet Union in the 1990s. Despite differences in methodology and in policy implications, Marxist theory, dominant in the 1920s, and neoclassical economics, dominant in the 1990s, offered a similarly reductive account of law as subservient to wider economic forces. In both cases, the subordinate place accorded to law undermined the transition process. Although path dependence and history are frequently invoked to explain the limited development of the rule of law in Russia during the 1990s, policy choices driven by a deterministic conception of law and economics also played a role.This is the author accepted manuscript. The final version is available from Springer via http://dx.doi.org/10.1007/s40803-015-0012-

Effect of Thermal Annealings and Cooling Methods on Electrophysical Parameters of n Si Doped with Phosphorus Impurity Via the Melt and by Nuclear Transmutation Technique

The effect of the different regimes of heat treatment on the kinetics of electronic processes in silicon crystals doped with phosphorus impurity via the melt and by nuclear transmutation technique. The most significant influence of cooling under intermediate value of cooling rate (ucl » 15 оС/min) after high-temperature annealing on the main electrophysical parameters of the transmutation-doped n‑Si áPñ crystals was established. Features of changes of the anisotropy parameters of mobility and thermal electromotive force measured on silicon crystals of different doping techniques both in the initial state, and after high-temperature annealing when using different cooling rates, were found and explained. Keywords: electrophysical parameters, n‑silicon, doping techniques, anisotropy parameters, thermal annealing, cooling rate.</p

Magneto- and Tensoresistance of the p-Ge Compensated Crystals in the Range of Weak, Intermediate and Classically Strong Magnetic Fields

On the crystalsof compensatedp-Ge (with the compensation factor of k = NSb/NGa = 0,5) the transverse (Н (J // X)) magnetoresistance (within the magnetic fields of 0 &lt; Н 22.3 kE) at fixed values of the mechanical stresses Хі = 0; 0.2; 0.4; 0.6; 0.9; 1.1; 1.5 GPa were measured at 77 K. These mechanical stresses X created the elastic deformation along the samples, the crystallographic orientation of which coincided with the direction of [100]. Also at fixed magnetic field intensities Ні = 2; 4; 8; 10; 15; 20; 22.3 kE the dependencies of resistivity on the mechanical stress X, which coincides with the longitudinal axis of the crystal (X // J // [100]) and changes in the range of 0 £ Х £ 1.5 GPa, were measured. Last dependences characterized by the presence of a minimum in the range of X ~ 0.5 ¸ 0.6 GPa at the minimal magnetic field intensities Н = 2 kOe, which was shifted to the values of X ~ 0.2 ¸ 0.3 GPa with increasing Н up to 22.3 kE. Keywords: germanium, compensated crystals, magnetotensoresistance, tensomagnetoresistance.</p

Investigation of Changes in Resistivity of n Si with Temperature and Uniaxial Stress

In this work the changes in resistivity of n Si with temperature and uniaxial stress X, oriented both in &lt;100&gt; and in [111] direction, were investigated. The value of the anisotropy parameter of mobility was obtained in the conditions of || || [100] and ^|| [100] with using the experimental data concerning longitudinal and transverse tenso-resistance. The presence of the n-Si tenso-resistance was found in the conditions of ||| || [111], i.e., in the absence of the interminimum redistribution of charge carriers. The physical explanation of the results was presented. Keywords: silicon, resistivity, uniaxial elastic deformation, tenso-resistance, anisotropy parameter of mobility.</span

Influence of γ-irradiation ( 60 Со) on the concentration and mobility of carriers in Ge and Si single crystals of n-type

Abstract. The influence of γ-irradiation ( 60 Co) (within the dose range 1×10 6 ≤ D ≤ 8×10 7 R) on the concentration and mobility of major carriers in germanium and silicon has been investigated. In the oxygen-containing samples of As Ge − n and P Si − n , and in the compensated crystals of Si − n , the mobility is shown to grow anomalously with the irradiation dose in the region of combined scattering of carriers. Proposed in this paper is the model based on accounting partial neutralization of charge of scattering centers by charge of radiation defects produced mainly around the scattering centers. This model qualitatively explains the experimental data

Ascertainment of the Reason for the Increase in the Anisotropy Parameter of Thermo-EMF for Transmutation-Doped n-Si with Increasing Annealing Temperature

Секция 3. Модификация свойств материалов = Section 3. Modification of Material PropertiesThe experimental data on measuring of thermoelectromotive force (thermo-emf), tenso-thermo-emf and tensoresistance of the transmutation-doped and ordinary n-Si crystals, which subjected to annealing at 1073 ≤ Т ann ≤ 1473 K during 2h, and cooled from the annealing temperatures to the room temperature with rates of 1 and 15 K/min, were presented. On the basis of the obtained experimental data the anisotropy parameter of thermo-emf of electron-phonon drag and the anisotropy parameter of mobility were determined. It is found that in the transmutation-doped n-Si crystals the increase of the anisotropy parameter of thermo-emf М = α II ph /α ⊥ ph with rising of the annealing temperature was caused by the increase of the longitudinal phonon component of thermoemf (α II ph ), while the transversal component (α ⊥ ph ) is reduced

Ascertainment of the Reason for the Increase in the Anisotropy Parameter of Thermo-EMF for Transmutation-Doped n-Si with Increasing Annealing Temperature

Секция 3. Модификация свойств материалов = Section 3. Modification of Material PropertiesThe experimental data on measuring of thermoelectromotive force (thermo-emf), tenso-thermo-emf and tensoresistance of the transmutation-doped and ordinary n-Si crystals, which subjected to annealing at 1073 ≤ Т ann ≤ 1473 K during 2h, and cooled from the annealing temperatures to the room temperature with rates of 1 and 15 K/min, were presented. On the basis of the obtained experimental data the anisotropy parameter of thermo-emf of electron-phonon drag and the anisotropy parameter of mobility were determined. It is found that in the transmutation-doped n-Si crystals the increase of the anisotropy parameter of thermo-emf М = α II ph /α ⊥ ph with rising of the annealing temperature was caused by the increase of the longitudinal phonon component of thermoemf (α II ph ), while the transversal component (α ⊥ ph ) is reduced