Influence of exciton spin relaxation on the photoluminescence spectra of semimagnetic quantum dots

We present a comprehensive experimental and theoretical studies of photoluminescence of single CdMnTe quantum dots with Mn content x ranging from 0.01 to 0.2. We distinguish three stages of the equilibration of the exciton-Mn ion spin system and show that the intermediate stage, in which the exciton spin is relaxed, while the total equilibrium is not attained, gives rise to a specific asymmetric shape of the photoluminescence spectrum. From an excellent agreement between the measured and calculated spectra we are able to evaluate the exciton localization volume, number of paramagnetic Mn ions, and their temperature for each particular dot. We discuss the values of these parameters and compare them with results of other experiments. Furthermore, we analyze the dependence of average Zeeman shifts and transition linewidths on the Mn content and point out specific processes, which control these values at particular Mn concentrations.Comment: submitted to Phys. Rev.

Zero- and one-dimensional magnetic traps for quasi-particles

We investigate the possibility of trapping quasi-particles possessing spin degree of freedom in hybrid structures. The hybrid system we are considering here is composed of a semi-magnetic quantum well placed a few nanometers below a ferromagnetic micromagnet. We are interested in two different micromagnet shapes: cylindrical (micro-disk) and rectangular geometry. We show that in the case of a micro-disk, the spin object is localized in all three directions and therefore zero-dimensional states are created, and in the case of an elongated rectangular micromagnet, the quasi-particles can move freely in one direction, hence one-dimensional states are formed. After calculating profiles of the magnetic field produced by the micromagnets, we analyze in detail the possible light absorption spectrum for different micromagnet thicknesses, and different distances between the micromagnet and the semimagnetic quantum well. We find that the discrete spectrum of the localized states can be detected via spatially-resolved low temperature optical measurement.Comment: 15 pages, 9 figure

Nonlocal resistance and its fluctuations in microstructures of band-inverted HgTe/(Hg,Cd)Te quantum wells

We investigate experimentally transport in gated microsctructures containing a band-inverted HgTe/Hg_{0.3}Cd_{0.7}Te quantum well. Measurements of nonlocal resistances using many contacts prove that in the depletion regime the current is carried by the edge channels, as expected for a two-dimensional topological insulator. However, high and non-quantized values of channel resistances show that the topological protection length (i.e. the distance on which the carriers in helical edge channels propagate without backscattering) is much shorter than the channel length, which is ~100 micrometers. The weak temperature dependence of the resistance and the presence of temperature dependent reproducible quasi-periodic resistance fluctuations can be qualitatively explained by the presence of charge puddles in the well, to which the electrons from the edge channels are tunnel-coupled.Comment: 8 pages, 4 figures, published versio

Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys

We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.Comment: Invited talk at 11th International Conference on Narrow Gap Semiconductors, Buffalo, New York, U.S.A., June 16 - 20, 200

Magnetic polaron formation and exciton spin relaxation in single CdMnTe quantum dots

We study the formation dynamics of a spontaneous ferromagnetic order in single self-assembled CdMnTe quantum dots. By measuring time-resolved photoluminescence, we determine the formation times for QDs with Mn ion contents x varying from 0.01 to 0.2. At low x these times are orders of magnitude longer than exciton spin relaxation times evaluated from the decay of photoluminescence circular polarization. This allows us to conclude that the direction of the spontaneous magnetization is determined by a momentary Mn spin fluctuation rather than resulting from an optical orientation. At higher x, the formation times are of the same order of magnitude as found in previous studies on higher dimensional systems. We also find that the exciton spin relaxation accelerates with increasing Mn concentration.Comment: sent to Physical Review

Sensing remote nuclear spins

Sensing single nuclear spins is a central challenge in magnetic resonance based imaging techniques. Although different methods and especially diamond defect based sensing and imaging techniques in principle have shown sufficient sensitivity, signals from single nuclear spins are usually too weak to be distinguished from background noise. Here, we present the detection and identification of remote single C-13 nuclear spins embedded in nuclear spin baths surrounding a single electron spins of a nitrogen-vacancy centre in diamond. With dynamical decoupling control of the centre electron spin, the weak magnetic field ~10 nT from a single nuclear spin located ~3 nm from the centre with hyperfine coupling as weak as ~500 Hz is amplified and detected. The quantum nature of the coupling is confirmed and precise position and the vector components of the nuclear field are determined. Given the distance over which nuclear magnetic fields can be detected the technique marks a firm step towards imaging, detecting and controlling nuclear spin species external to the diamond sensor

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

We investigate the impact of a fluorine plasma treatment used to obtain enhancement-mode operation on the structure and chemistry at the nanometer and atomic scales of an InAlN/GaN field effect transistor. The fluorine plasma treatment is successful in that enhancement mode operation is achieved with a +2.8 V threshold voltage. However, the InAlN barrier layers are observed to have been damaged by the fluorine treatment with their thickness being reduced by up to 50%. The treatment also led to oxygen incorporation within the InAlN barrier layers. Furthermore, even in the as-grown structure, Ga was unintentionally incorporated during the growth of the InAlN barrier. The impact of both the reduced barrier thickness and the incorporated Ga within the barrier on the transistor properties has been evaluated theoretically and compared to the experimentally determined two-dimensional electron gas density and threshold voltage of the transistor. For devices without fluorine treatment, the two-dimensional electron gas density is better predicted if the quaternary nature of the barrier is taken into account. For the fluorine treated device, not only the changes to the barrier layer thickness and composition, but also the fluorine doping needs to be considered to predict device performance. These studies reveal the factors influencing the performance of these specific transistor structures and highlight the strengths of the applied nanoscale characterisation techniques in revealing information relevant to device performance.</jats:p