7 research outputs found
ΠΠΊΡΠΏΡΠ΅ΡΡΠ½ΡΠΉ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ Π½Π°Π΄Π΅ΠΆΠ½ΠΎΡΡΠΈ ΠΏΠΎΠ΄Π·Π°ΡΠ²ΠΎΡΠ½ΠΎΠ³ΠΎ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠ° ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ ΠΏΡΠΈΠ±ΠΎΡΠΎΠ²
The key element determining stability of the semiconductor devices is a gate dielectric. As its thickness reduces in the process of scaling the combined volume of factors determining its electrophysical properties increases. The purpose of this paper is development of the control express method of the error-free running time of the gate dielectric and study the influence of the rapid thermal treatment of the initial silicon wafers and gate dielectric on its reliability.The paper proposes a model for evaluation of the reliability indicators of the gate dielectrics as per the trial results of the test MDS-structures by means of applying of the ramp-increasing voltage on the gate up to the moment of the structure breakdown at various velocities of the voltage sweep with measurement of the IV-parameters. The proposed model makes it possible to realize the express method of the reliability evaluation of the thin dielectrics right in the production process of the integrated circuits.On the basis of this method study of the influence of the rapid thermal treatment of the initial silicon wafers of the KEF 4.5, KDB 12 wafers and formed on them by means of the pyrogenic oxidation of the gate dielectric for the error-free running time were performed. It is shown, that rapid thermal treatment of the initial silicon wafers with their subsequent oxidation results in increase of the error-free running time of the gate dielectric on average from 12.9 to 15.9 years (1.23 times greater). Thermal treatment of the initial silicon wafers and gate dielectric makes it possible to expand the error-free running time up to 25.2 years, i.e.1.89 times more, than in the standard process of the pyrogenic oxidation and 1.5 times more, than under application of the rapid thermal treatment of the initial silicon wafers only.ΠΠ»ΡΡΠ΅Π²ΡΠΌ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠΌ, ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΡΡΠΈΠΌ ΡΡΠ°Π±ΠΈΠ»ΡΠ½ΠΎΡΡΡ ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΡΡ
ΠΏΡΠΈΠ±ΠΎΡΠΎΠ², ΡΠ²Π»ΡΠ΅ΡΡΡ ΠΏΠΎΠ΄Π·Π°ΡΠ²ΠΎΡΠ½ΡΠΉ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊ. ΠΠΎ ΠΌΠ΅ΡΠ΅ ΡΠΌΠ΅Π½ΡΡΠ΅Π½ΠΈΡ Π΅Π³ΠΎ ΡΠΎΠ»ΡΠΈΠ½Ρ Π² ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΌΠ°ΡΡΡΠ°Π±ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ°ΡΡΠ΅Ρ ΡΠΎΠ²ΠΎΠΊΡΠΏΠ½ΡΠΉ ΠΎΠ±ΡΠ΅ΠΌ ΡΠ°ΠΊΡΠΎΡΠΎΠ², ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΡΡΠΈΡ
Π΅Π³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΎΡΠΈΠ·ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΡΠ²ΠΎΠΉΡΡΠ²Π°. Π¦Π΅Π»ΡΡ Π΄Π°Π½Π½ΠΎΠΉ ΡΠ°Π±ΠΎΡΡ ΡΠ²Π»ΡΠ»Π°ΡΡ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΡΠΊΡΠΏΡΠ΅ΡΡΠ½ΠΎΠ³ΠΎ ΠΌΠ΅ΡΠΎΠ΄Π° ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ Π½Π°ΡΠ°Π±ΠΎΡΠΊΠΈ Π½Π° ΠΎΡΠΊΠ°Π· ΠΏΠΎΠ΄Π·Π°ΡΠ²ΠΎΡΠ½ΠΎΠ³ΠΎ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠ° ΠΈ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ Π²Π»ΠΈΡΠ½ΠΈΡ Π±ΡΡΡΡΠΎΠΉ ΡΠ΅ΡΠΌΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΈΡΡ
ΠΎΠ΄Π½ΡΡ
ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΡ
ΠΏΠ»Π°ΡΡΠΈΠ½ ΠΈ ΠΏΠΎΠ΄Π·Π°ΡΠ²ΠΎΡΠ½ΠΎΠ³ΠΎ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠ° Π½Π° Π΅Π³ΠΎ Π½Π°Π΄Π΅ΠΆΠ½ΠΎΡΡΡ.Π ΡΠ°Π±ΠΎΡΠ΅ ΠΏΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½ ΠΌΠ΅ΡΠΎΠ΄ ΠΎΡΠ΅Π½ΠΊΠΈ ΠΏΠΎΠΊΠ°Π·Π°ΡΠ΅Π»Π΅ΠΉ Π½Π°Π΄Π΅ΠΆΠ½ΠΎΡΡΠΈ ΠΏΠΎΠ΄Π·Π°ΡΠ²ΠΎΡΠ½ΡΡ
Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠΎΠ² ΠΏΠΎ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠ°ΠΌ ΠΈΡΠΏΡΡΠ°Π½ΠΈΠΉ ΡΠ΅ΡΡΠΎΠ²ΡΡ
ΠΠΠ-ΡΡΡΡΠΊΡΡΡ ΠΏΡΡΠ΅ΠΌ ΠΏΠΎΠ΄Π°ΡΠΈ Π½Π° Π·Π°ΡΠ²ΠΎΡ ΡΡΡΠΏΠ΅Π½ΡΠ°ΡΠΎ-Π½Π°ΡΠ°ΡΡΠ°ΡΡΠ΅Π³ΠΎ Π½Π°ΠΏΡΡΠΆΠ΅Π½ΠΈΡ Π΄ΠΎ ΡΠΈΠΊΡΠ°ΡΠΈΠΈ ΠΌΠΎΠΌΠ΅Π½ΡΠ° ΠΏΡΠΎΠ±ΠΎΡ ΡΡΡΡΠΊΡΡΡΡ ΠΏΡΠΈ ΡΠ°Π·Π½ΡΡ
ΡΠΊΠΎΡΠΎΡΡΡΡ
ΡΠ°Π·Π²Π΅ΡΡΠΊΠΈ Π½Π°ΠΏΡΡΠΆΠ΅Π½ΠΈΡ ΠΏΡΠΈ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΠΈ Π²ΠΎΠ»ΡΡ-Π°ΠΌΠΏΠ΅ΡΠ½ΡΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ. ΠΡΠ΅Π΄Π»ΠΎΠΆΠ΅Π½Π½Π°Ρ ΠΌΠΎΠ΄Π΅Π»Ρ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΡΠ΅Π°Π»ΠΈΠ·ΠΎΠ²Π°ΡΡ ΡΠΊΡΠΏΡΠ΅ΡΡΠ½ΡΠΉ ΠΌΠ΅ΡΠΎΠ΄ ΠΎΡΠ΅Π½ΠΊΠΈ Π½Π°Π΄Π΅ΠΆΠ½ΠΎΡΡΠΈ ΡΠΎΠ½ΠΊΠΈΡ
Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠΎΠ² Π½Π΅ΠΏΠΎΡΡΠ΅Π΄ΡΡΠ²Π΅Π½Π½ΠΎ Π² ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΏΡΠΎΠΈΠ·Π²ΠΎΠ΄ΡΡΠ²Π° ΠΊΡΠΈΡΡΠ°Π»Π»ΠΎΠ² ΠΌΠΈΠΊΡΠΎΡΡ
Π΅ΠΌ.ΠΠ° ΠΎΡΠ½ΠΎΠ²Π°Π½ΠΈΠΈ Π΄Π°Π½Π½ΠΎΠ³ΠΎ ΠΌΠ΅ΡΠΎΠ΄Π° ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½Ρ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ Π²Π»ΠΈΡΠ½ΠΈΡ Π±ΡΡΡΡΠΎΠΉ ΡΠ΅ΡΠΌΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΈΡΡ
ΠΎΠ΄Π½ΡΡ
ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΡ
ΠΏΠ»Π°ΡΡΠΈΠ½ ΠΠΠ€ 4,5, ΠΠΠ 12 ΠΈ ΡΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠ³ΠΎ Π½Π° Π½ΠΈΡ
ΠΏΡΡΠ΅ΠΌ ΠΏΠΈΡΠΎΠ³Π΅Π½Π½ΠΎΠ³ΠΎ ΠΎΠΊΠΈΡΠ»Π΅Π½ΠΈΡ ΠΏΠΎΠ΄Π·Π°ΡΠ²ΠΎΡΠ½ΠΎΠ³ΠΎ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠ° Π½Π° Π²ΡΠ΅ΠΌΡ Π½Π°ΡΠ°Π±ΠΎΡΠΊΠΈ Π΅Π³ΠΎ Π½Π° ΠΎΡΠΊΠ°Π·. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Π±ΡΡΡΡΠ°Ρ ΡΠ΅ΡΠΌΠΈΡΠ΅ΡΠΊΠ°Ρ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠ° ΠΈΡΡ
ΠΎΠ΄Π½ΡΡ
ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΡ
ΠΏΠ»Π°ΡΡΠΈΠ½ Ρ ΠΏΠΎΡΠ»Π΅Π΄ΡΡΡΠΈΠΌ ΠΈΡ
ΠΏΠΈΡΠΎΠ³Π΅Π½Π½ΡΠΌ ΠΎΠΊΠΈΡΠ»Π΅Π½ΠΈΠ΅ΠΌ ΠΏΡΠΈΠ²ΠΎΠ΄ΠΈΡ ΠΊ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΡ Π²ΡΠ΅ΠΌΠ΅Π½ΠΈ Π½Π°ΡΠ°Π±ΠΎΡΠΊΠΈ Π½Π° ΠΎΡΠΊΠ°Π· ΠΏΠΎΠ΄Π·Π°ΡΠ²ΠΎΡΠ½ΠΎΠ³ΠΎ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠ° Π² ΡΡΠ΅Π΄Π½Π΅ΠΌ Ρ 12,9 Π΄ΠΎ 15,9 Π³ΠΎΠ΄Π° (Π² 1,23 ΡΠ°Π·Π°). Π’Π΅ΡΠΌΠΎΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠ° ΠΈΡΡ
ΠΎΠ΄Π½ΡΡ
ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΡ
ΠΏΠ»Π°ΡΡΠΈΠ½ ΠΈ ΠΏΠΎΠ΄Π·Π°ΡΠ²ΠΎΡΠ½ΠΎΠ³ΠΎ Π΄ΠΈΡΠ»Π΅ΠΊΡΡΠΈΠΊΠ° ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΡΠ²Π΅Π»ΠΈΡΠΈΡΡ Π²ΡΠ΅ΠΌΡ Π½Π°ΡΠ°Π±ΠΎΡΠΊΠΈ Π½Π° ΠΎΡΠΊΠ°Π· Π΄ΠΎ 25,2 Π³ΠΎΠ΄Π°, Ρ.Π΅. Π² 1,89 ΡΠ°Π·Π° Π±ΠΎΠ»ΡΡΠ΅, ΡΠ΅ΠΌ ΠΏΡΠΈ ΡΡΠ°Π½Π΄Π°ΡΡΠ½ΠΎΠΌ ΠΏΡΠΎΡΠ΅ΡΡΠ΅ ΠΏΠΈΡΠΎΠ³Π΅Π½Π½ΠΎΠ³ΠΎ ΠΎΠΊΠΈΡΠ»Π΅Π½ΠΈΡ, ΠΈ Π² 1,5 ΡΠ°Π·Π° Π±ΠΎΠ»ΡΡΠ΅, ΡΠ΅ΠΌ ΠΏΡΠΈ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠΈ Π±ΡΡΡΡΠΎΠΉ ΡΠ΅ΡΠΌΠΎΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΡΠΎΠ»ΡΠΊΠΎ ΠΈΡΡ
ΠΎΠ΄Π½ΡΡ
ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΡ
ΠΏΠ»Π°ΡΡΠΈΠ½
Reliability Express Control of the Gate Dielectric of Semiconductor Devices
The key element determining stability of the semiconductor devices is a gate dielectric. As its thickness reduces in the process of scaling the combined volume of factors determining its electrophysical properties increases. The purpose of this paper is development of the control express method of the error-free running time of the gate dielectric and study the influence of the rapid thermal treatment of the initial silicon wafers and gate dielectric on its reliability.The paper proposes a model for evaluation of the reliability indicators of the gate dielectrics as per the trial results of the test MDS-structures by means of applying of the ramp-increasing voltage on the gate up to the moment of the structure breakdown at various velocities of the voltage sweep with measurement of the IV-parameters. The proposed model makes it possible to realize the express method of the reliability evaluation of the thin dielectrics right in the production process of the integrated circuits.On the basis of this method study of the influence of the rapid thermal treatment of the initial silicon wafers of the KEF 4.5, KDB 12 wafers and formed on them by means of the pyrogenic oxidation of the gate dielectric for the error-free running time were performed. It is shown, that rapid thermal treatment of the initial silicon wafers with their subsequent oxidation results in increase of the error-free running time of the gate dielectric on average from 12.9 to 15.9 years (1.23 times greater). Thermal treatment of the initial silicon wafers and gate dielectric makes it possible to expand the error-free running time up to 25.2 years, i.e.1.89 times more, than in the standard process of the pyrogenic oxidation and 1.5 times more, than under application of the rapid thermal treatment of the initial silicon wafers only
Localized plasmon resonance in boron-doped multiwalled carbon nanotubes
Substitutionally boron-doped multiwalled carbon nanotubes (B-CNTs) with lengths mainly less than 0.5 ΞΌ m and diameters 10β30 nm have been obtained by arc-discharge evaporation of the graphite anode containing boron material. The broad peak has been observed in the midinfrared conductivity spectra of the thin film comprising B-CNTs. The peak was suggested to be associated with a phenomenon known as localized plasmon resonance. Theoretical analysis has been done to confirm the possibility of this phenomenon to occur in the B-CNTs