A Photonic Atom Probe coupling 3D Atomic Scale Analysis with in situ Photoluminescence Spectroscopy

Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence ({\mu}PL) bench that can be operated during APT analysis. The Photonic Atom Probe instrument we have developped operates at frequencies up to 500 kHz and is controlled by 150 fs laser pulses tunable in energy in a large spectral range (spanning from deep UV to near IR). Micro-PL spectroscopy is performed using a 320 mm focal length spectrometer equipped with a CCD camera for time-integrated and with a streak camera for time-resolved acquisitions. An exemple of application of this instrument on a multi-quantum well oxide heterostructure sample illustrates the potential of this new generation of tomographic atom probe.Comment: 22 pages, 4 figures. The following article has been accepted by the Review of Scientific Instruments. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals

Etude des phénomènes de physisorption d’espèces chimiques sur des plaques de Si 300mm lors des transferts en mini-environnement contrôlés entre équipements en microélectronique

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Atomic scale investigation of Si and Ce-rich nanoclusters in Ce-doped SiO1.5 thin films

International audienceThe optical properties and the nanoscale structure of Ce‐doped SiO1.5 thin films elaborated by evaporation were investigated by photoluminescence and atom probe tomography. Strong Ce‐related blue luminescence is observed on the 1100 °C annealed sample. Atom probe tomography experiments give evidence of the formation of a cerium silicate having a stoichiometry compatible with Ce2Si2O7. Moreover, we further observe the formation of pure Si nanocrystals (Si‐ncs) which results from the phase separation of the SiO1.5 film. No optical signal from Si‐ncs was observed at least for the 3% Ce‐doped SiO1.5 film considered in this study. We analyze the size distribution of both Si‐ncs and Ce2Si2O7 particles. Finally, the Si and Ce diffusion coefficients were estimated based on atom probe tomography characterization

In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

The possibility of measuring in situ operando photoluminescence spectroscopy within a photonic atom probe allows for the real-time study of the mechanical stress state within a field emitter either statically, as a function of the field-induced tensile stress, or dynamically, as a result of the evolution of the shape of the emitter upon its evaporation. Dynamic evolution results from the relaxation of strain induced by lattice mismatch and by the propagation of stress from the apex, while the morphology of the field emitter changes. Optomechanical information can be interpreted through the three-dimensional atomic scale images of the chemical composition of the emitter obtained through standard atom probe analysis. Here, the photoluminescence signal of a ZnO/(Mg,Zn)O quantum well allows for the local measurement of strain within the well and of the electrostatic field applied to the apex of the nanoscale field emitter

In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

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In Situ Spectroscopic Study of the Optomechanical Properties of Evaporating Field Ion Emitters

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InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

International audienceWe demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (0 0 1)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20 nm width fins. This block copolymer has been optimized to self-assemble into lamellar structure with a period of 30 nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15 nm spaced by almost 10 nm. Early electrical characterizations exhibit a current flow through the connected fins