70Ge(p,gamma)71As and 76Ge(p,n)76As cross sections for the astrophysical p process: sensitivity of the optical proton potential at low energies

The cross sections of the 70Ge(p,gamma)71As and 76Ge(p,n)76As reactions have been measured with the activation method in the Gamow window for the astrophysical p process. The experiments were carried out at the Van de Graaff and cyclotron accelerators of ATOMKI. The cross sections have been derived by measuring the decay gamma-radiation of the reaction products. The results are compared to the predictions of Hauser-Feshbach statistical model calculations using the code NON-SMOKER. Good agreement between theoretical and experimental S factors is found. Based on the new data, modifications of the optical potential used for low-energy protons are discussed.Comment: Accepted for publication in Phys. Rev.

Precise half-life measurement of 110Sn and 109In isotopes

The half-lives of 110Sn and 109In isotopes have been measured with high precision. The results are T1/2 =4.173 +- 0.023 h for 110Sn and T1/2 = 4.167 +-0.018 h for 109In. The precision of the half-lives has been increased by a factor of 5 with respect to the literature values which makes results of the recently measured 106Cd(alpha,gamma)110Sn and 106Cd(alpha,p)109In cross sections more reliable.Comment: 3 pages, 2 figures, accepted for publication in Phys. Rev C as brief repor

First Principles Study of Adsorption of O2O_{2} on Al Surface with Hybrid Functionals

Adsorption of $O_{2}$ molecule on Al surface has been a long standing puzzle for the first principles calculation. We have studied the adsorption of $O_{2}$ molecule on the Al(111) surface using hybrid functionals. In contrast to the previous LDA/GGA, the present calculations with hybrid functionals successfully predict that $O_{2}$ molecule can be absorbed on the Al(111) surface with a barrier around 0.2$\thicksim$0.4 eV, which is in good agreement with experiments. Our calculations predict that the LUMO of $O_{2}$ molecule is higher than the Fermi level of the Al(111) surface, which is responsible for the barrier of the $O_{2}$ adsorption.Comment: 14 pages, 5 figure

Coulomb suppression of the stellar enhancement factor

It is commonly assumed that reaction measurements for astrophysics should be preferably performed in the direction of positive Q value to minimize the impact of the stellar enhancement factor, i.e. the difference between the laboratory rate and the actual stellar rate. We show that the stellar effects can be minimized in the charged particle channel, even when the reaction Q value is negative. As a demonstration, the cross section of the astrophysically relevant 85Rb(p,n)85Sr reaction has been measured by activation between 2.16 < Ec.m. < 3.96 MeV and the astrophysical reaction rate for (p,n) as well as (n,p) is directly inferred from the data. The presented arguments are also relevant for other alpha and proton-induced reactions in the p and rp processes. Additionally, our results confirm a previously derived modification of a global optical proton potential.Comment: submitted to PR

A new scanning tunneling microscope reactor used for high-pressure and high-temperature catalysis studies

This is the published version. Copyright 2008 American Institute of PhysicsWe present the design and performance of a homebuilt high-pressure and high-temperature reactor equipped with a high-resolution scanning tunneling microscope STM for catalytic studies. In this design, the STM body, sample, and tip are placed in a small high pressure reactor 19 cm3 located within an ultrahigh vacuum UHV chamber. A sealable port on the wall of the reactor separates the high pressure environment in the reactor from the vacuum environment of the STM chamber and permits sample transfer and tip change in UHV. A combination of a sample transfer arm, wobble stick, and sample load-lock system allows fast transfer of samples and tips between the preparation chamber, high pressure reactor, and ambient environment. This STM reactor can work as a batch or flowing reactor at a pressure range of 10−13 to several bars and a temperature range of 300–700 K. Experiments performed on two samples both in vacuum and in high pressure conditions demonstrate the capability of in situ investigations of heterogeneous catalysis and surface chemistry at atomic resolution at a wide pressure range from UHV to a pressure higher than 1 atm

Alpha-induced reactions for the astrophysical p-process: the case of 151Eu

The cross sections of 151Eu(alpha,gamma)155Tb and 151Eu(alpha,n)154Tb reactions have been measured with the activation method. Some aspects of the measurement are presented here to illustrate the requirements of experimental techniques needed to obtain nuclear data for the astrophysical p-process nucleosynthesis. Preliminary cross section results are also presented and compared with the predictions of statistical model calculations.Comment: Accepted for publication in Journal of Physics Conference Series, proceeding of the Nuclear Physics in Astrophysics IV. conferenc

Alpha-induced cross sections of 106Cd for the astrophysical p-process

The 106Cd(alpha,gamma)110Sn reaction cross section has been measured in the energy range of the Gamow window for the astrophysical p-process scenario. The cross sections for 106Cd(alpha,n)109Sn and for 106Cd(alpha,p)109In below the (alpha,n) threshold have also been determined. The results are compared with predictions of the statistical model code NON-SMOKER using different input parameters. The comparison shows that a discrepancy for 106Cd(alpha,gamma)110Sn when using the standard optical potentials can be removed with a different alpha+106Cd potential. Some astrophysical implications are discussed.Comment: 10 pages, 9 figures, accepted for publication in Phys. Rev

Surface structure and electronic properties of materials

A surface potential model is developed to explain dopant effects on chemical vapor deposition. Auger analysis of the interaction between allotropic forms of carbon and silicon films has shown Si-C formation for all forms by glassy carbon. LEED intensity measurements have been used to determine the mean square displacement of surface atoms of silicon single crystals, and electron loss spectroscopy has shown the effect of structure and impurities on surface states located within the band gap. A thin film of Al has been used to enhance film crystallinity at low temperature