Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers

We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy hole levels, whereas there is no sign of tunnelling through the first light hole state. This demonstrates for the first time the conservation of the total angular momentum in valence band resonant tunnelling. It is also shown that conduction through light hole states is possible in many structures due to tunnelling of carriers from bulk emitter states.Comment: 4 pages, 4 figure

Probe-sample interaction in aperture-type THz near-field microscopy of complementary resonators

Subwavelength complementary metallic resonators operating in the terahertz (THz) regime are investigated with aperture near-field microscopy and spectroscopy. In contrast to far-field methods, the spectra of individual isolated resonators can be retrieved. We find that we can experimentally gain spectral information without modifying the spectral properties of the resonator with the aperture-type near-field probe by operating it at a separation distance greater than 10 μ {m}

Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides

The waveguide losses from a range of surface plasmon and double metal waveguides for Ge/Si1-xGex THz quantum cascade laser gain media are investigated at 4.79 THz (62.6 µm wavelength). Double metal waveguides demonstrate lower losses than surface plasmonic guiding with minimum losses for a 10 µm thick active gain region with silver metal of 21 cm-1 at 300 K reducing to 14.5 cm-1 at 10 K. Losses for silicon foundry compatible metals including Al and Cu are also provided for comparison and to provide a guide for gain requirements to enable lasers to be fabricated in commercial silicon foundries. To allow these losses to be calculated for a range of designs, the complex refractive index of a range of nominally undoped Si1-xGex with x = 0.7, 0.8 and 0.9 and doped Ge heterolayers were extracted from Fourier transform infrared spectroscopy measurements between 0.1 and 10 THz and from 300 K down to 10 K. The results demonstrate losses comparable to similar designs of GaAs/AlGaAs quantum cascade laser plasmon waveguides indicating that a gain threshold of 15.1 cm-1 and 23.8 cm-1 are required to produce a 4.79 THz Ge/SiGe THz laser at 10 K and 300 K, respectively, for 2 mm long double metal waveguide quantum cascade lasers with facet coatings. © 2020 OSA - The Optical Society. All rights reserved

Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells

Spin-split heavy-hole gases in strained germanium quantum wells were characterized by polarisation-resolved terahertz time-domain spectroscopy. Effective masses, carrier densities, g-factors, transport lifetimes, mobilities and Rashba spin-splitting energies were evaluated, giving quantitative insights into the influence of strain. The Rashba coefficient was found to lower for samples with higher biaxial compressive strain, while heavy-hole mobilities were enhanced to over $1.5\times {10}^{6}$ cm2 V−1 s−1 at 3 K. This high mobility enabled the observation of the optical quantum Hall effect at terahertz frequencies for spin-split two-dimensional heavy-holes, evidenced as plateaux in the transverse magnetoconductivity at even and odd filling factors

Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides

The waveguide losses from a range of surface plasmon and double metal waveguides for Ge/Si1−xGex THz quantum cascade laser gain media are investigated at 4.79 THz (62.6 μm wavelength). Double metal waveguides demonstrate lower losses than surface plasmonic guiding with minimum losses for a 10 μm thick active gain region with silver metal of 21 cm−1 at 300 K reducing to 14.5 cm−1 at 10 K. Losses for silicon foundry compatible metals including Al and Cu are also provided for comparison and to provide a guide for gain requirements to enable lasers to be fabricated in commercial silicon foundries. To allow these losses to be calculated for a range of designs, the complex refractive index of a range of nominally undoped Si1−xGex with x = 0.7, 0.8 and 0.9 and doped Ge heterolayers were extracted from Fourier transform infrared spectroscopy measurements between 0.1 and 10 THz and from 300 K down to 10 K. The results demonstrate losses comparable to similar designs of GaAs/AlGaAs quantum cascade laser plasmon waveguides indicating that a gain threshold of 15.1 cm−1 and 23.8 cm−1 are required to produce a 4.79 THz Ge/SiGe THz laser at 10 K and 300 K, respectively, for 2 mm long double metal waveguide quantum cascade lasers with facet coatings