Zintl phases for thermoelectric devices

By converting waste heat into electricity and improving the efficiency of refrigeration systems, thermoelectric devices could play a significant role in solving today's energy problems. Increasing the thermoelectric efficiency (as measured by the thermoelectric material's figure-of-merit, zT) is critical to the development of this technology. Complex Zintl phases, in particular, make ideal candidates for thermoelectric materials because the necessary electron–crystal, phonon–glass properties can be engineered with an understanding of the Zintl chemistry. A recent example is the discovery that Yb14MnSb11, a transition metal Zintl compound, has twice the zT as the material currently in use at NASA. This perspective outlines a strategy to discover new high zT materials in Zintl phases, and presents results pointing towards the success of this approach

High temperature thermoelectric efficiency in Ba8Ga16Ge30

The high thermoelectric figure of merit (zT) of Ba8Ga16Ge30 makes it one of the best n-type materials for thermoelectric power generation. Here, we describe the synthesis and characterization of a Czochralski pulled single crystal of Ba8Ga16Ge30 and polycrystalline disks. Measurements of the electrical conductivity, Hall effect, specific heat, coefficient of thermal expansion, thermal conductivity, and Seebeck coefficient were performed up to 1173 K and compared with literature results. Dilatometry measurements give a coefficient of thermal expansion of 16×10^−6 K^−1 up to 1175 K. The trend in electronic properties with composition is typical of a heavily doped semiconductor. The maximum in the thermoelectric figure of merit is found at 1050 K with a value of 0.8. The correction of zT due to thermal expansion is not significant compared to the measurement uncertainties involved. Comparing the thermoelectric efficiency of segmented materials, the effect of compatibility makes Ba8Ga16Ge30 more efficient than the higher zT n-type materials SiGe or skutterudite CoSb3

Effect of disorder on the thermal transport and elastic properties in thermoelectric Zn4Sb3

Zn4Sb3 undergoes a phase transition from alpha to beta phase at T1[approximate]250 K. The high temperature beta-Zn4Sb3 phase has been widely investigated as a potential state-of-the-art thermoelectric (TE) material, due to its remarkably low thermal conductivity. We have performed electronic and thermal transport measurements exploring the structural phase transition at 250 K. The alpha to beta phase transition manifests itself by anomalies in the resistivity, thermopower, and specific heat at 250 K as well as by a reduction in the thermal conductivity as Zn4Sb3 changes phase from the ordered alpha to the disordered beta-phase. Moreover, measurements of the elastic constants using resonant ultrasound spectroscopy (RUS) reveal a dramatic softening at the order-disorder transition upon warming. These measurements provide further evidence that the remarkable thermoelectric properties of beta-Zn4Sb3 are tied to the disorder in the crystal structure

Hybrid carcinoma of the salivary gland: salivary duct adenocarcinoma adenoid cystic carcinoma

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/73933/1/j.1365-2559.1999.00761.x.pd

High-Temperature Transport Properties of the Zintl Phases Yb_(11)GaSb_9 and Yb_(11)InSb_9

Two rare-earth Zintl phases, Yb_(11)GaSb_9 and Yb_(11)InSb_9, were synthesized in high-temperature self-fluxes of molten Ga and In, respectively. Structures were characterized by both single-crystal X-ray diffraction and powder X-ray diffraction and are consistent with the published orthorhombic structure, with the space group Iba2. High-temperature differential scanning calorimetry (DSC) and thermal gravimetry (TG) measurements reveal thermal stability to 1300 K. Seebeck coefficient and resistivity measurements to 1000 K are consistent with the hypothesis that Yb_(11)GaSb_9 and Yb_(11)InSb_9 are small band gap semiconductors or semimetals. Low doping levels lead to bipolar conduction at high temperature, preventing a detailed analysis of the transport properties. Thermal diffusivity measurements yield particularly low lattice thermal conductivity values, less than 0.6 W/m K for both compounds. The low lattice thermal conductivity suggests that Yb_(11)MSb_9 (M = Ga, In) has the potential for high thermoelectric efficiency at high temperature if charge-carrier doping can be controlled

Lattice thermal conductivity of self-assembled PbTe-Sb_2Te_3 composites with nanometer lamellae

In the system of PbTe and Sb_2Te_3, a metastable compound Pb_2Sb_6Te_(11) appears by solidification processing. It has been reported that this compound is decomposed into the two immiscible thermoelectric materials forming nanosized lamellar structure by heat treatments. The fraction transformed and the inter-lamellar spacing was systematically investigated. In this work, the thermal conductivities and the electrical resistivities have been measured as functions of annealing time through the transformation and the coarsening processes to clarify the effect of the fraction transformed and the inter-lamellar spacing. The thermal conductivity of Pb_2Sb_6Te_(11) is lower than that after the decomposition. The lattice part of the thermal conductivity of PbTe/Sb_2Te_3 lamellar samples decreases with decreasing inter-lamellar spacing. This is considered to be due to the coarsening of the microstructure

Conceptual design of single turbofan engine powered light aircraft

The conceptual design of a four place single turbofan engine powered light aircraft was accomplished utilizing contemporary light aircraft conventional design techniques as a means of evaluating the NASA-Ames General Aviation Synthesis Program (GASP) as a preliminary design tool. In certain areas, disagreement or exclusion were found to exist between the results of the conventional design and GASP processes. Detail discussion of these points along with the associated contemporary design methodology are presented

Synthesis, structure, and high-temperature thermoelectric properties of boron-doped Ba_8Al_(14)Si_(31) clathrate I phases

Single crystals of boron-doped Ba_8Al_(14)Si_(31) clathrate I phase were prepared using Al flux growth. The structure and elemental composition of the samples were characterized by single-crystal and powder X-ray diffraction; elemental analysis; and multinuclear ^(27)Al, ^(11)B, and ^(29)Si solid-state NMR. The samples' compositions of Ba_8B_(0.17)Al_(14)Si_(31), Ba_8B_(0.19)Al_(15)Si_(31), and Ba_8B_(0.32)Al_(14)Si_(310) were consistent with the framework-deficient clathrate I structure Ba_8Al_xSi_(42-3/4x)□_(4-1/4x) (X = 14, □ = lattice defect). Solid-state NMR provides further evidence for boron doped into the framework structure. Temperature-dependent resistivity indicates metallic behavior, and the negative Seebeck coefficient indicates that transport processes are dominated by electrons. Thermal conductivity is low, but not significantly lower than that observed in the undoped Ba_8Al_(14)Si_(31) prepared in the same manner