Voltage-controlled wavelength conversion by terahertz electro-optic modulation in double quantum wells

An undoped double quantum well (DQW) was driven with a terahertz (THz) electric field of frequency \omega_{THz} polarized in the growth direction, while simultaneously illuminated with a near-infrared (NIR) laser at frequency \omega_{NIR}. The intensity of NIR upconverted sidebands \omega_{sideband}=\omega_{NIR} + \omega_{THz} was maximized when a dc voltage applied in the growth direction tuned the excitonic states into resonance with both the THz and NIR fields. There was no detectable upconversion far from resonance. The results demonstrate the possibility of using gated DQW devices for all-optical wavelength shifting between optical communication channels separated by up to a few THz.Comment: 3 pages, 6 figures. Figures 5 and 6 are JPEG files, figures/fig5.jpg and fig6.jp

Toward the creation of terahertz graphene injection laser

We study the effect of population inversion associated with the electron and hole injection in graphene p-i-n structures at the room and slightly lower temperatures. It is assumed that the recombination and energy relaxation of electrons and holes is associated primarily with the interband and intraband processes assisted by optical phonons. The dependences of the electron-hole and optical phonon effective temperatures on the applied voltage, the current-voltage characteristics, and the frequency-dependent dynamic conductivity are calculated. In particular, we demonstrate that at low and moderate voltages the injection can lead to a pronounced cooling of the electron-hole plasma in the device i-section to the temperatures below the lattice temperature. However at higher voltages, the voltage dependences can be ambiguous exhibiting the S-shape. It is shown that the frequency-dependent dynamic conductivity can be negative in the terahertz range of freqiencies at certain values of the applied voltage. The electron-hole plasma cooling substantially reinforces the effect of negative dynamic conductivity and promotes the realization of terahertz lasing. On the other hand, the heating of optical phonon system can also be crucial affecting the realization of negative dynamic conductivity and terahertz lasing at the room temperatures.Comment: 10 pages, 7 figure

Externally mode-matched cavity quantum electrodynamics with charge-tunable quantum dots

We present coherent reflection spectroscopy on a charge and DC Stark tunable quantum dot embedded in a high-quality and externally mode-matched microcavity. The addition of an exciton to a single-electron charged quantum dot forms a trion that interacts with the microcavity just below strong coupling regime of cavity quantum electrodynamics. Such an integrated, monolithic system is a crucial step towards the implementation of scalable hybrid quantum information schemes that are based on an efficient interaction between a single photon and a confined electron spin.Comment: 10 pages, 4 figure

On the relationship between small and large signal modulation capabilities in highly nonlinear quantum dot lasers

The small signal modulation response of semiconductor lasers is commonly used to predict large signal modulation capabilities. Recent experiments suggest that this prediction may fail in some quantum dot (QD) lasers. We present a model supported by experiments, which shows that when the small signal modulation response is limited by gain compression and the gain is large, the laser can be modulated at very high bit rates. This effect is inherent to dynamics governing all semiconductor lasers but the conditions needed for high bit rate modulation in the presence of narrow small signal bandwidths are only obtainable in QD lasers

Strong-field terahertz-optical mixing in excitons

Driving a double-quantum-well excitonic intersubband resonance with a terahertz (THz) electric field of frequency \omega_{THz} generated terahertz optical sidebands \omega=\omega_{THz}+\omega_{NIR} on a weak NIR probe. At high THz intensities, the intersubband dipole energy which coupled two excitons was comparable to the THz photon energy. In this strong-field regime the sideband intensity displayed a non-monotonic dependence on the THz field strength. The oscillating refractive index which gives rise to the sidebands may be understood by the formation of Floquet states, which oscillate with the same periodicity as the driving THz field.Comment: 4 pages, 6 figure

High-Frequency Electrooptic Fabry-Perot Modulators

Electrooptic modulators built from GaAs/AlxGa1-xAs Fabry-Perot cavities operating up to 6.5 GHz are reported. The measured frequency response agrees well with the one predicted using an equivalent circuit model derived from high-speed electrical measurements. The parasitic capacitances have been reduced to approximately 30 fF by fabricating the devices on semi-insulating GaAs substrates and integrating them with on-wafer bound pads which have dimensions compatible with microwave coplanar probes

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells to suppress the temperature dependence of the threshold current in vertical-external-cavity surface-emitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electrodynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. A difference of this review from the other existing works on semiconductor VECSEL devices is that we will cover both the fundamental aspects and technological approaches of QD VECSEL devices. And lastly, the presented review here has provided a deep insight into useful guideline for the development of QD VECSEL technology and future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhICs).Comment: 21 pages, 4 figures. arXiv admin note: text overlap with arXiv:0904.369

Ultrafast switch-on dynamics of frequency-tuneable semiconductor lasers

Single-mode frequency-tuneable semiconductor lasers based on monolithic integration of multiple cavity sections are important components, widely used in optical communications, photonic integrated circuits and other optical technologies. To date, investigations of the ultrafast switching processes in such lasers, essential to reduce frequency cross-talk, have been restricted to the observation of intensity switching over nanosecond-timescales. Here, we report coherent measurements of the ultrafast switch-on dynamics, mode competition and frequency selection in a monolithic frequency-tuneable laser using coherent time-domain sampling of the laser emission. This approach allows us to observe hopping between lasing modes on picosecond-timescales and the temporal evolution of transient multi-mode emission into steady-state single mode emission. The underlying physics is explained through a full multi-mode, temperature-dependent carrier and photon transport model. Our results show that the fundamental limit on the timescales of frequency-switching between competing modes varies with the underlying Vernier alignment of the laser cavity

Spin-polarized Zener tunneling in (Ga,Mn)As

We investigate spin-polarized inter-band tunneling through measurement of (Ga,Mn)As based Zener tunnel diode. By placing the diode under reverse bias, electron spin polarization is transferred from the valence band of p-type (Ga,Mn)As to the conduction band of an adjacent n-GaAs layer. The resulting current is monitored by injection into a quantum well light emitting diode whose electroluminescence polarization is found to track the magnetization of the (Ga,Mn)As layer as a function of both temperature and magnetic field.Comment: 11 pages, 4 figures. Submitted, Physical Review B15 Rapid Communication