Mapping of 2+1-dimensional Kardar-Parisi-Zhang growth onto a driven lattice gas model of dimer

We show that a 2+1 dimensional discrete surface growth model exhibiting Kardar-Parisi-Zhang (KPZ) class scaling can be mapped onto a two dimensional conserved lattice gas model of directed dimers. In case of KPZ height anisotropy the dimers follow driven diffusive motion. We confirm by numerical simulations that the scaling exponents of the dimer model are in agreement with those of the 2+1 dimensional KPZ class. This opens up the possibility of analyzing growth models via reaction-diffusion models, which allow much more efficient computer simulations.Comment: 5 pages, 4 figures, final form to appear in PR

Positron annihilation lifetime spectroscopy at a superconducting electron accelerator

The Helmholtz-Zentrum Dresden-Rossendorf operates a superconducting linear accelerator for electrons with energies up to 35 MeV and average beam currents up to 1.6 mA. The electron beam is employed for production of several secondary beams including X-rays from bremsstrahlung production, neutrons, and positrons. The secondary positron beam after moderation feeds the Monoenergetic Positron Source (MePS) where positron annihilation lifetime (PALS) and positron annihilation Doppler-broadening experiments in materials science are performed in parallel. The adjustable repetition rate of the continuous-wave electron beams allows matching of the pulse separation to the positron lifetime in the sample under study. The energy of the positron beam can be set between 0.5 keV and 20 keV to perform depth resolved defect spectroscopy and porosity studies especially for thin films

Purely antiferromagnetic magnetoelectric random access memory

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics