Channeling in helium ion microscopy: Mapping of crystal orientation

Background: The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a\ud competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling\ud through the crystal structure of the bulk of the material can occur.\ud Results: Here, we demonstrate how this bulk phenomenon affects secondary electron images that predominantly contain surface\ud information. In addition, we will show how it can be used to obtain crystallographic information. We will discuss the origin of\ud channeling contrast in secondary electron images, illustrate this with experiments, and develop a simple geometric model to predict\ud channeling maxima.\ud Conclusion: Channeling plays an important role in helium ion microscopy and has to be taken into account when trying to achieve\ud maximum image quality in backscattered helium images as well as secondary electron images. Secondary electron images can be\ud used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

Background: Helium ion microscopy is a new high-performance alternative to classical scanning electron microscopy. It provides superior resolution and high surface sensitivity by using secondary electrons.\ud \ud Results: We report on a new contrast mechanism that extends the high surface sensitivity that is usually achieved in secondary electron images, to backscattered helium images. We demonstrate how thin organic and inorganic layers as well as self-assembled monolayers can be visualized on heavier element substrates by changes in the backscatter yield. Thin layers of light elements on heavy substrates should have a negligible direct influence on backscatter yields. However, using simple geometric calculations of the opaque crystal fraction, the contrast that is observed in the images can be interpreted in terms of changes in the channeling probability.\ud \ud Conclusion: The suppression of ion channeling into crystalline matter by adsorbed thin films provides a new contrast mechanism for HIM. This dechanneling contrast is particularly well suited for the visualization of ultrathin layers of light elements on heavier substrates. Our results also highlight the importance of proper vacuum conditions for channeling-based experimental methods\u

Digging gold: keV He+ ion interaction with Au

Helium ion microscopy (HIM) was used to investigate the interaction of a focused He+ ion beam with energies of several tens of kiloelectronvolts with metals. HIM is usually applied for the visualization of materials with extreme surface sensitivity and resolution. However, the use of high ion fluences can lead to significant sample modifications. We have characterized the changes caused by a focused He+ ion beam at normal incidence to the Au{111} surface as a function of ion fluence and energy. Under the influence of the beam a periodic surface nanopattern develops. The periodicity of the pattern shows a power-law dependence on the ion fluence. Simultaneously, helium implantation occurs. Depending on the fluence and primary energy, porous nanostructures or large blisters form on the sample surface. The growth of the helium bubbles responsible for this effect is discusse

Visualization and chemical characterization of the cathode electrolyte interphase using He-ion microscopy and in situ time-of-flight secondary ion mass spectrometry

Unstable cathode electrolyte interphase (CEI) formation increases degradation in high voltage Li-ion battery materials. Few techniques couple characterization of nano-scale CEI layers on the macroscale with in situ chemical characterization, and thus, information on how the underlying microstructure affects CEI formation is lost. Here, the process of CEI formation in a high voltage cathode material, LiCoPO4, has been investigated for the first time using helium ion microscopy (HIM) and in situ time-of-flight (ToF) secondary ion mass spectrometry (SIMS). The combination of HIM and Ne-ion ToF-SIMS has been used to correlate the cycle-dependent morphology of the CEI layer on LiCoPO4 with a local cathode microstructure, including position, thickness, and chemistry. HIM imaging identified partial dissolution of the CEI layer on discharge resulting in in-homogenous CEI coverage on larger LiCoPO4 agglomerates. Ne-ion ToF-SIMS characterization identified oxyfluorophosphates from HF attack by the electrolyte and a Li-rich surface region. Variable thickness of the CEI layer coupled with inactive Li on the surface of LiCoPO4 electrodes contributes to severe degradation over the course of 10 cycles. The HIM–SIMS technique has potential to further investigate the effect of microstructures on CEI formation in cathode materials or solid electrolyte interphase formation in anodes, thus aiding future electrode development

Ultralong-term high-density data storage with atomic defects in SiC

There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.Comment: 8 pages, 4 figure

Signature of multilayer growth of 2D layered Bi2Se3 through heteroatom-assisted step-edge barrier reduction

During growth of two-dimensional (2D) materials, abrupt growth of multilayers is practically unavoidable even in the case of well-controlled growth. In epitaxial growth of a quintuple-layered Bi2Se3 film, we observe that the multilayer growth pattern deduced from in situ x-ray diffraction implies nontrivial interlayer diffusion process. Here we find that an intriguing diffusion process occurs at step edges where a slowly downward-diffusing Se adatom having a high step-edge barrier interacts with a Bi adatom pre-existing at step edges. The Se???Bi interaction lowers the high step-edge barrier of Se adatoms. This drastic reduction of the overall step-edge barrier and hence increased interlayer diffusion modifies the overall growth significantly. Thus, a step-edge barrier reduction mechanism assisted by hetero adatom???adatom interaction could be fairly general in multilayer growth of 2D heteroatomic materials

Application of Graphene within Optoelectronic Devices and Transistors

Scientists are always yearning for new and exciting ways to unlock graphene's true potential. However, recent reports suggest this two-dimensional material may harbor some unique properties, making it a viable candidate for use in optoelectronic and semiconducting devices. Whereas on one hand, graphene is highly transparent due to its atomic thickness, the material does exhibit a strong interaction with photons. This has clear advantages over existing materials used in photonic devices such as Indium-based compounds. Moreover, the material can be used to 'trap' light and alter the incident wavelength, forming the basis of the plasmonic devices. We also highlight upon graphene's nonlinear optical response to an applied electric field, and the phenomenon of saturable absorption. Within the context of logical devices, graphene has no discernible band-gap. Therefore, generating one will be of utmost importance. Amongst many others, some existing methods to open this band-gap include chemical doping, deformation of the honeycomb structure, or the use of carbon nanotubes (CNTs). We shall also discuss various designs of transistors, including those which incorporate CNTs, and others which exploit the idea of quantum tunneling. A key advantage of the CNT transistor is that ballistic transport occurs throughout the CNT channel, with short channel effects being minimized. We shall also discuss recent developments of the graphene tunneling transistor, with emphasis being placed upon its operational mechanism. Finally, we provide perspective for incorporating graphene within high frequency devices, which do not require a pre-defined band-gap.Comment: Due to be published in "Current Topics in Applied Spectroscopy and the Science of Nanomaterials" - Springer (Fall 2014). (17 pages, 19 figures

Co induced nanocrystals on Ge(001)

The deposition of several monolayers of cobalt on germanium (001) substrates results in the formation of two types of clusters: flat-topped and peaked nanocrystals. Scanning tunneling spectroscopy and helium ion microscopy measurements reveal that these nanocrystals contain cobalt. The shape evolution of the flat-topped and peaked nanocrystals as a function of their size is investigated with scanning tunneling microscopy. For small sizes the nanocrystals are compact. Beyond a critical size, however, the peaked nanocrystals exhibit an elongated shape, whilst the flat-topped nanocrystals remain compact. The shape transition of the peaked nanocrystals is driven by a competition between boundary and strain energies. For small sizes the boundary energy is the dominant term leading to a minimization of the peaked nanocrystal's perimeter, whereas at larger sizes the strain energy wins resulting in a maximization of the perimeter. On the top facet of the flat-topped nanocrystals one-dimensional structures are observed that are comprised of small square shaped units of about 1 nm2. Time-resolved scanning tunneling microscopy measurements reveal that these square shaped units are dynamic at room temperatur