Characterisation of two alcohol acyltransferases from kiwifruit (Actinidia spp.) reveals distinct substrate preferences.

Volatile esters are key compounds of kiwifruit flavour and are formed by alcohol acyltransferases that belong to the BAHD acyltransferase superfamily. Quantitative RT-PCR was used to screen kiwifruitderived expressed sequence tags with proposed acyltransferase function in order to select ripeningspecific sequences and test their involvement in alcohol acylation. The screening criterion was for at least 10-fold increased transcript accumulation in ripe compared with unripe kiwifruit and in response to ethylene. Recombinant expression in yeast revealed alcohol acyltransferase activity for Actinidia-derived AT1, AT16 and the phylogenetically distinct AT9, using various alcohol and acyl-CoA substrates. Functional characterisation of AT16 and AT9 demonstrated striking differences in their substrate preferences and apparent catalytic efficiencies ðV0 max K�1 m Þ. Thus revealing benzoyl-CoA:alcohol O-acyltransferase activity for AT16 and acetyl-CoA:alcohol O-acyltransferase activity for AT9. Both kiwifruit-derived enzymes displayed higher reaction rates with butanol compared with ethanol, even though ethanol is the main alcohol in ripe fruit. Since ethyl acetate and ethyl benzoate are major esters in ripe kiwifruit, we suggest that fruit characteristic volatile profiles result from a combination of substrate availability and specificity of individual alcohol acyltransferases

Hybrid III-V/Si distributed-feedback laser based on adhesive bonding

A hybrid evanescently coupled III-V/silicon distributed-feedback laser with an integrated monitor photodiode, based on adhesive divinyl siloxane-benzocyclobutene bonding and emitting at 1310 nm, is presented. An output power of similar to 2.85 mW is obtained in a continuous wave regime at 10 degrees C. The threshold current is 20 mA and a sidemode suppression ratio of 45 dB is demonstrated. Optical feedback is provided via corrugations on top of the silicon rib waveguide, while a specially developed bonding procedure yields 40-nm-thick adhesive bonding layers, enabling efficient evanescent coupling

Mid-Infrared nonlinear silicon photonics

Recently there has been a growing interest in mid-infrared (mid-IR) photonic technology with a wavelength of operation approximately from 2-14 mu m. Among several established mid-IR photonic platforms, silicon nanophotonic platform could potentially offer ultra-compact, and monolithically integrated mid-IR photonic devices and device arrays, which could have board impact in the mid-IR technology, such as molecular spectroscopy, and imaging. At room temperature, silicon has a bandgap similar to 1.12 eV resulting in vanishing two-photon absorption (TPA) for mid-IR wavelengths beyond 2.2 mu m, which, coupled with silicon's large nonlinear index of refraction and its strong waveguide optical confinement, enables efficient nonlinear processes in the mid-IR. By taking advantage of these nonlinear processes and judicious dispersion engineering in silicon waveguides, we have recently demonstrated a handful of silicon mid-IR nonlinear components, including optical parametric amplifiers (OPA), broadband sources, and a wavelength translator. Silicon nanophotonic waveguide's anomalous dispersion design, providing four-wave-mixing (FWM) phase-matching, has enabled the first demonstration of silicon mid-IR optical parametric amplifier (OPA) with a net off-chip gain exceeding 13 dB. In addition, reduction of propagation losses and balanced second and fourth order waveguide dispersion design led to an OPA with an extremely broadband gain spectrum from 1.9-2.5 mu m and > 50 dB parametric gain, upon which several novel silicon mid-IR light sources were built, including a mid-IR optical parametric oscillator, and a supercontinuum source. Finally, a mid-IR wavelength translation device, capable of translating signals near 2.4 mu m to the telecom-band near 1.6 mu m with simultaneous 19 dB gain, was demonstrated

Theoretical dimensioning and sizing limits of hybrid energy storage systems

Aim of a storage hybridisation is a beneficial usage or combination of different storage technologies with various characteristics to downsize the overall system, decrease the costs or to increase the lifetime, system efficiency or performance. In this paper, the point of interest is a different ratio of power to energy (specific power) of two storages to create a hybrid energy storage system (HESS) with a resulting specific power that better matches the requirements of the application. The approach enables a downsizing of the overall system compared to a single storage system and consequently decreases costs. The paper presents a theoretical and analytical benchmark calculation that determines the maximum achievable hybridisation, i.e. possible spread in specific power, while retaining the original total energy and power capacities of an equivalent single storage system. The theory is independent from technology, topology, control strategy, and application and provides a unified view on hybrid energy storage systems. It serves as a pre-dimensioning tool and first step within a larger design process. Furthermore, it presents a general approach to choose storage combinations and to characterize the potential of an application for hybridisation. In this context, a Hybridisation Diagram is proposed and integral Hybridisation Parameters are introduced

Mid-infrared broadband modulation instability and 50 dB Raman assisted parametric gain in silicon photonic wires

Abstract: We demonstrate broadband modulation instability, > 40 dB parametric amplification with on-chip gain bandwidth > 580 nm, and narrowband Raman-assisted peak on-chip gain exceeding 50 dB, using mid-infrared dispersion-engineered silicon nanophotonic wires