17,566 research outputs found
Gromov's measure equivalence and rigidity of higher rank lattices
In this paper the notion of Measure Equivalence (ME) of countable groups is
studied. ME was introduced by Gromov as a measure-theoretic analog of
quasi-isometries. All lattices in the same locally compact group are Measure
Equivalent; this is one of the motivations for this notion. The main result of
this paper is ME rigidity of higher rank lattices: any countable group which is
ME to a lattice in a simple Lie group G of higher rank, is commensurable to a
lattice in G.Comment: 23 pages, published versio
Orbit equivalence rigidity
Consider a countable group Gamma acting ergodically by measure preserving
transformations on a probability space (X,mu), and let R_Gamma be the
corresponding orbit equivalence relation on X. The following rigidity
phenomenon is shown: there exist group actions such that the equivalence
relation R_Gamma on X determines the group Gamma and the action (X,mu,Gamma)
uniquely, up to finite groups. The natural action of SL_n(Z) on the n-torus
R^n/Z^n, for n>2, is one of such examples. The interpretation of these results
in the context of von Neumann algebras provides some support to the conjecture
of Connes on rigidity of group algebras for groups with property T. Our
rigidity results also give examples of countable equivalence relations of type
II, which cannot be generated (mod 0) by a free action of any group. This gives
a negative answer to a long standing problem of Feldman and Moore.Comment: 26 pages, published versio
Consequences of negative differential electron mobility in insulated gate field effect transistors
We study the consequences of negative differential electron mobility in
insulated gate field effect transistors (FETS) using the field model. We show
that, in contrast to the case of the monotonic velocity saturation model, the
field distributions in a short-channel FET may be described by the gradual
channel approximation even for high drain-to-source voltages. The
current-voltage dependence of the short-channel FET should have a branch with a
negative slope. The FET exhibits a negative differential resistance and may
show convective or absolute instability, depending on the applied voltages. The
fluctuation growth is governed by the diffusion law with a negative effective
diffusion coefficient.Comment: 4 pages, 2 figure
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