Gromov's measure equivalence and rigidity of higher rank lattices

In this paper the notion of Measure Equivalence (ME) of countable groups is studied. ME was introduced by Gromov as a measure-theoretic analog of quasi-isometries. All lattices in the same locally compact group are Measure Equivalent; this is one of the motivations for this notion. The main result of this paper is ME rigidity of higher rank lattices: any countable group which is ME to a lattice in a simple Lie group G of higher rank, is commensurable to a lattice in G.Comment: 23 pages, published versio

Orbit equivalence rigidity

Consider a countable group Gamma acting ergodically by measure preserving transformations on a probability space (X,mu), and let R_Gamma be the corresponding orbit equivalence relation on X. The following rigidity phenomenon is shown: there exist group actions such that the equivalence relation R_Gamma on X determines the group Gamma and the action (X,mu,Gamma) uniquely, up to finite groups. The natural action of SL_n(Z) on the n-torus R^n/Z^n, for n>2, is one of such examples. The interpretation of these results in the context of von Neumann algebras provides some support to the conjecture of Connes on rigidity of group algebras for groups with property T. Our rigidity results also give examples of countable equivalence relations of type II, which cannot be generated (mod 0) by a free action of any group. This gives a negative answer to a long standing problem of Feldman and Moore.Comment: 26 pages, published versio

Consequences of negative differential electron mobility in insulated gate field effect transistors

We study the consequences of negative differential electron mobility in insulated gate field effect transistors (FETS) using the field model. We show that, in contrast to the case of the monotonic velocity saturation model, the field distributions in a short-channel FET may be described by the gradual channel approximation even for high drain-to-source voltages. The current-voltage dependence of the short-channel FET should have a branch with a negative slope. The FET exhibits a negative differential resistance and may show convective or absolute instability, depending on the applied voltages. The fluctuation growth is governed by the diffusion law with a negative effective diffusion coefficient.Comment: 4 pages, 2 figure