Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies

Author Correction: Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

The original version of this Article omitted an affiliation for M. Lisker. The correct affiliations for M. Lisker are listed below: IHP- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany Technical University of Applied Science Wildau, Hochschulring 1, 15745, Wildau, Germany The original Article and accompanying Supplementary Information file have been corrected

Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability

Through-Silicon Via process module with backside metallization and redistribution layer within a 130 nm SiGe BiCMOS technology

The development of a Through-Silicon Via process module within a high performance SiGe BiCMOS technology is demonstrated. The TSV technology module including both the TSV fabrication process itself, the temporary wafer bonding for BiCMOS thin wafer handling and the thin wafer backside processing is developed on 8-inch wafer level and the optimization of the different process steps are explained. This process module is fully compatible with the qualified SiGe BiCMOS technology environment which enables very uniform and reliable TSV backside fabrication adding new functionalities into IHPs high performance SiGe BiCMOS technologies applicable for thin wafer applications and 3D heterogeneous integration

Microfluidic Embedded BiCMOS Process for DEP Trapping of Single Cell

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Si1-xGex/Si MQW based uncooled microbolometer development and integration into 130 nm BiCMOS technology

In this paper, the recent progress on Sii-xGeVSi based high performance detector structures is presented. The process optimization of the detector by means of high TCR, low 1/f noise and appropriate resistance is summarized. The method of integrating the developed Sii-xGex/Si multi quantum well (MQW) detector structures into a 130 nm BiCMOS process is provided. The optimization studies required for the full integration of the suspended uncooled microbolometer device are presented

Using artistic form for aesthetic organizational inquiry:Rimini Protokoll constructs Daimler's Annual General Meeting as a theatre play

This paper reviews and analyses an artistic intervention in the context of aesthetic organizational inquiry and theatre in organizations. Having served as inspiration and as a tool within organizations, theatre now has returned the favour: Rimini Protokoll, a group of directors, used Daimler's 2009 Annual General Meeting in Berlin as a ready-made and constructed it as a theatre play entitled Hauptversammlung. Two hundred theatre spectators were channelled into the event via the purchase of shares. This study focuses on the aesthetic experience of the event and underlines the potential of artistic forms for aesthetic organizational inquiry. Implications suggest that a so-called postdramatic, nonlinear aesthetic form can be most promising for enabling critical interpretations of organizational issues