Innovative processes impact on the factors optimal number formation of the enterprise location

The aim of the article. Determination of the factors to locate enterprises for searching optimal location place, therefore grounding enterprise location place with one or several factors one should consider innovative development nowadays. The results of the analysis. The branches referring to this or that production group will always have relative character and will concern time period, because – various factors value can be changed under influence of innovation introduction. Technological and organizational changes of production with big probability impact effect its location. On the territory of some states or regions the enterprise can be built, which earlier it was not efficiently to build. Taking into account this “innovative prism” concerning enterprises location factor, we can form ten factors, which are taken by enterprises while searching their optimal location places. Direction of production attention to raw sources. The enterprises orient to be located close to raw sources and producing based due to this factor. Direction of attention to the raw sources is reasonably to conduct in the following cases. Firstly, raw procurement, processing or mining (minerals mining, sawmilling industry, fish-processing industry, etc.) enterprises have raw orientation. Secondly, enterprises, which waste a lot of raw materials in relation to final product, i.e. material-intensive production, direct their attention to the raw sources. Thirdly, enterprises, processing raw, which is quickly spoiled: wine industry, food-canning industry, fish-processing industry, etc., are closely situated to the raw sources. Direction of the producing attention to electric power and fuel sources. Highly energy-intensive productions (fuel and energetic costs component is half of the whole costs for production) have to direct their attention to close location to fuel bases (heat and power stations, petrochemical industry enterprises, etc.) or close to the electric power sources (processing of the non-ferrous metals with the help of electrolysis, electric ferroalloys production enterprises, synthetic fertilizers enterprises). Direction of the producing attention to fresh water sources. Fresh water which is consumed during producing process groups enterprises according to the factor on fresh water sources location. It comprises water-intensive industrial and agricultural enterprises. Direction of the producing attention to the cheap and numerous labor power. This factor groups enterprises, optimal location of which is place with numerous and cheap labor power. Labor costs in relation to production unit producing are determined by labor resources effect. Such branches need the man power as: instrument making industry, instrument industry, optomechanical production, electronics, machine tool building, automobile production, production of clothing, wool, silk, shoes industry goods. Direction of the producing attention to the qualified labor power. In big cities, which have higher schools and scientific and research institutes, enterprises are located, which require highly qualified labor power in the production process (machine building, plants- and rockets production, etc.). Direction of such enterprises in other places without necessary highly qualified man power, would lead to the additional spending of time and costs to train such workers or to involve them from other cities. Direction of producing attention to the consumers. Such direction of attention occurs, when final product is not reasonably to bring on large distances (bread, dairy products, chemical acids, etc.). Direction of the producing attention to places, where one may minimize costs for production producing. Such direction of the producing attention may be when costs for final production transportation are not so large. Orientation of the producing attention to the places with high qualified environment. It is impossible to build instrument building, optic, aviation, pharmaceutical enterprises in the polluted environment. Great costs must be wasted by these enterprises to create artificial space of high quality in sections; however result of such events is limited. For example, in previous places of metallurgy in German it was not financially profitable and sometimes it was impossible, to develop electronic production because of great air pollution. Direction of the producing attention to the places, where it is comparatively cheap to shorten the existing level of emissions. The enterprises with high level of environment anthropogenic pollution consider the optimal location place that, where costs to decrease emissions at the enterprises will be less. As a result of ecological direction in the state development, new enterprises are to decrease emissions analogical to their pollutions emissions on the existing enterprises, if it is cheaper there. Direction of the producing attention to the places, where danger from their work for population is minimized. Conclusions and directions of further researches. Innovative processes in time space make these or those economy branches top-priority. Particularly, in the middle of the last century the leading role was given to agriculture and textile industry, when today iron industry and transport machine building are perspective. Now innovations are introduced into energetics, machine building, chemical industry and electronics. Taking into account such fast innovative development of the formed 10 factors is enough to optimize enterprises location or search places to locate new enterprises

Luminescence of InxTl1−xI Nanocrystals Embedded in Dielectric Matrixes

The relaxation dynamics of the exciton resonances in the layer InxTl1−xI semiconductor for its transition from bulk crystals to the quantum-size nanocrystals synthesised within the different matrices is analysed. The mordenitetype (Na-MOR)Na₈[Al₈Si₄₀O₉₆]⋅24H₂O zeolite, beryl and porous silicon are used as matrices. As experimentally shown, the size-effects’ influence affect the parameters of the band-to-band transitions and the genesis of exciton states in substitutional solid solution of InxTl1−xI.На прикладі шаруватого напівпровідника InxTl1−xI проаналізовано динаміку релаксації екситонних збуджень при переході від блочних монокристалів до нанокристалів, синтезованих у ріжних матрицях, таких як поруватий кремній, берил та природній цеоліт Na₈[Al₈Si₄₀O₉₆]⋅24H₂O (морденіт). Експериментально виявлено вплив розмірного квантування на параметри зона-зонних переходів, а також генезис екситонних станів твердих розчинів заміщення InxTl1−xI.На примере слоистого полупроводника InxTl1−xI проанализирована динамика релаксации экситонных возбуждений при переходе от блочных монокристаллов к нанокристаллам, синтезированным в разных матрицах, таких как пористый кремний, берилл и цеолит Na₈[Al₈Si₄₀O₉₆]⋅24H₂O (морденит). Экспериментально выявлено влияние размерного квантовния на параметры зона-зонных переходов, а также генезис экситонных состояний твердых растворов замещения InxTl1−xI

Simulation of optical spectra of novel Tl 4 CdI 6 and Tl 4 HgI 6 optoelectronic crystals

The results of calculations using local density approximation and generalized gradient approximation: the total energy depending on the volume of the unit cell, the distribution of the total density of states and the partial contributions of electronic orbitals in the band structure of Tl 4 CdI 6 and Tl 4 HgI 6 crystals are shown in this paper. The spectra of the real part of the dielectric permittivity, the spectra of the imaginary part of permittivity, the reflection spectra and the absorption coefficient of both crystals are obtained using the Kramers-Kronig method. A comparative analysis of theoretical calculations with experimental data is carried out. Substantial influence of electron-phonon broadening is shown

The band energy structure of RbKSO₄ crystals

The energy band structure of mechanically free and compressed RbKSO₄ single crystals is investigated. It is established that the top of the valence band is located at the D point of the Brillouin zone [k = (0.5, 0.5, 0)], the bottom of the conduction band lies at the Γ point, and the minimum direct band gap Eg is equal to 5.80 eV. The bottom of the conduction band is predominantly formed by the K s, Li p, Rb s, and Rb p states hybridized with the S p and O p antibonding states. The pressure coefficients of the energy position of the valence and conduction band states and the band gap Eg are determined.Дослiджено енергетичну структуру механiчно вiльних i затиснених одновiсним тиском монокристалiв RbKSO₄. Встановлено, що вершина валентної зони локалiзована в точцi D зони Брiллюена [k = (0.5, 0.5, 0)], дно зони провiдностi знаходиться в точцi Γ, а найменша ширина прямої забороненої щiлини Eg рiвна 5,80 еВ. Дно зони провiдностi сформовано в основному K s, Li p, Rb s i Rb p станами, гiбридизованими з антизв’язуючими S p i O p станами. Визначенi баричнi коефiцiєнти енергетичної змiни валентної зони, зони провiдностi та ширини забороненої зони Eg

Влияние инновационных процессов на формирование оптимального количества факторов размещения предприятий

У статті аналізується вплив інноваційних процесів сьогодення на формування чинників розміщення підприємств. Обґрунтовується вплив інновацій на зміну економіко-господарських процесів на існуючих підприємствах і наголошується на їх актуальності. Сформовано оптимальну кількість чинників для оптимізації розміщення існуючих підприємств чи пошуку місць для розміщення нових.В статье анализируется влияние инновационных процессов настоящего на формирование факторов размещения предприятий. Обосновывается влияние инноваций на изменение экономико-хозяйственных процессов на существующих предприятиях и подчеркивается их актуальность. Сформировано оптимальное количество факторов для оптимизации размещения существующих предприятий или поиска мест для размещения новыхThe article deals with today’s innovative processes impact on the enterprise location factors. It is grounded that innovations influence the economic and economy process change at the existing enterprises and are urgent. The optimal number of factors to optimize enterprises or to search new enterprises location places is formed

Влияние инновационных процессов на формирование оптимального количества факторов размещения предприятий

У статті аналізується вплив інноваційних процесів сьогодення на формування чинників розміщення підприємств. Обґрунтовується вплив інновацій на зміну економіко-господарських процесів на існуючих підприємствах і наголошується на їх актуальності. Сформовано оптимальну кількість чинників для оптимізації розміщення існуючих підприємств чи пошуку місць для розміщення нових.В статье анализируется влияние инновационных процессов настоящего на формирование факторов размещения предприятий. Обосновывается влияние инноваций на изменение экономико-хозяйственных процессов на существующих предприятиях и подчеркивается их актуальность. Сформировано оптимальное количество факторов для оптимизации размещения существующих предприятий или поиска мест для размещения новыхThe article deals with today’s innovative processes impact on the enterprise location factors. It is grounded that innovations influence the economic and economy process change at the existing enterprises and are urgent. The optimal number of factors to optimize enterprises or to search new enterprises location places is formed

The role of innovation in the placement of country productive forces

The article analyzed the impact of innovation processes present at the search for enterprises optimal placement firms. Substantiates the impact of innovation on changing economic and business processes at existing plants

Simulation of optical spectra of novel Tl4CdI6 and Tl4HgI6 optoelectronic crystals

The results of calculations using local density approximation and generalized gradient approximation: the total energy depending on the volume of the unit cell, the distribution of the total density of states and the partial contributions of electronic orbitals in the band structure of Tl4CdI6 and Tl4HgI6 crystals are shown in this paper. The spectra of the real part of the dielectric permittivity, the spectra of the imaginary part of permittivity, the reflection spectra and the absorption coefficient of both crystals are obtained using the Kramers–Kronig method. A comparative analysis of theoretical calculations with experimental data is carried out. Substantial influence of electron–phonon broadening is shown

Thermostimulated luminescence spectra of InxTl₁-xI nanostructures synthesized in porous silicon

The dose dependence of integral intensity of thermostimulated luminescence spectra of InxTl₁-xI nanostructures synthesized in porous silicon voids and exposed to hard y-radiation has been investigated. The mechanisms of recombination processes and the practical application possibility of the structures obtained as detectors of radioactive irradiation have been discussed.Исследована дозовая зависимость интегральной интенсивности спектров термостимулированной люминесценции нанокристаллов твёрдых растворов замещения InxTl₁-xI, синтезированных в полостях пористого кремния, при у-облучении. Рассматриваются механизмы рекомбинационных процессов и возможность практического использования полученных структур в качестве датчиков радиационного излучения.Досліджєно дозову залежність інтегральної інтєнсивності спєктрів термостимульованої люмінєсцєнції нанокристалів твеpдиx розчинів заміщення InxTl₁-xI, cинтезoваниx у пopoжнинаx пористого кремнію, при у-опроміненні. Розглядаються меxанiзми рекомбі-нацiйниx процесів та можливість практичного застосування oтpиманиx структур як датчиків радіаційного опромінення

Birefringence of InₓTl₁₋ₓI solid state solution

The results of investigation of optical properties of the newly synthesized solid solution InₓTl₁₋ₓI in concentration range of 0.4≤x≤0.7 are presented. Birefringence is measured for InₓTl₁₋ₓI solid state solution. Dependence of the birefringence Δ ni on the concentration of thallium iodide is investigated. Dielectric permeability distribution ε(E) is calculated using pseudopotential method in the framework of density functional theory. The real ε₁ and imaginary ε₂ parts of the dielectric constant are calculated for polarization