Reliability assessment of backward error recovery for SRAM-based FPGAs

International audienceno abstrac

Context-aware resources placement for SRAM-based FPGA to minimize checkpoint/recovery overhead

International audienceno abstrac

Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

The excellent characteristics of high electron mobility transistors based on AlGaN/GaN heterostructures rely on the properties of the substrate used for their epitaxial growth. In this work, we evaluate 3C-SiC as an alternative to the commonly used 4H-SiC. Up to 2 μm thick 3C-SiC layers on Si templates have been used as substrates to develop an epitaxial growth process for high-quality AlGaN/GaN heterostructures. We demonstrate the deposition of up to 5 μm crack-free heterostructures on 2 μm thick 3C-SiC on Si by using a metalorganic chemical vapor deposition process. Several characteristics of these structures, such as crystal quality, morphology, and electrical properties, are close to what can be achieved when using 4H-SiC substrates. The results of this work motivate further development in order to obtain thicker and semi-insulating 3C-SiC layers to be used instead of the expensive and size-limited 4H-SiC substrates

Changes to the Triaxial Composition of the Hydrated Phases (CaO/Al2O3/SiO2) in the Metakaolin/Lime System

This study examines the composition of certain hydrates (calcium silicate, aluminum silicate, and related phases) produced by the pozzolanic reaction of waste-paper sludge that had previously been activated at different temperatures. It summarizes and compares the evolution of the oxide compounds, and records their stability intervals. Changes to their mineralogical composition were analyzed using X-Ray Diffraction, scanning electron microscopy, and energy dispersive X-ray spectroscopy. The hydration products from 1 to 360 days of curing time were CSH gels, hydrotalcite-type compounds (LDH), and stratlingite (C2ASH8). CSH gels were employed as substrates for growing other materials and their morphologies were modified from fibrous to hexagonal layers. The composition of the LDH-type compounds observed in the carbonate group varied with changes in curing time. Two LDH-type compound types were identified: (a) with and (b) without magnesium. Stratlingite was the only stable material after long-curing times.Peer reviewe

Fast SRAM-FPGA Fault Injection Platform based On Dynamic Partial Reconfiguration

International audienceSRAM-based FPGAs are very sensitive to harsh conditions, like radiations or ionizations, and need to be hardened to insure correct running. To validate any fault tolerant solution for these SRAM-FPGA, fault injection campaigns must be conducted carefully. In this work, we present a new design flow to perform localized internal fault injection on specific parts of a Design Under Test (DUT). To achieve this, we combine between Partial Dynamic Reconfiguration (PDR) via Internal Configuration Access Port (ICAP) for rapid fault insertion on SRAM; Isolation Design Flow (IDF) to isolate both of placement and routing of Design Under Test into a specific partial region. Moreover, we applied realistic fault distribution laws deduced from ground-based radiation experiments to reflect realistic behavior of FPGA toward radiations. The implemented injection platform using this flow shows the importance of using distribution laws driven approach. Results show that our fault injection experiments are done more than 15 times faster than one of the traditional FPGA based fault injection methods with a speed-up on simulation time up to 8

First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET

One current focus of research is the realization of GaN-based enhancement-mode devices. A novel approach for the realization of enhancement-mode behaviour is the utilization of polarization matching between the barrier and the GaN buffer. Yet, the utilization of a quaternary barrier combining polarization engineering together with a large conduction band offset has not been demonstrated so far. Here, epitaxially grown, compressively strained AlInGaN is applied as a nearly polarization-matched barrier layer on GaN resulting in enhancement-mode operation. The insulated-gate devices are fabricated gate-first with Al2O3 as gate dielectric. Passivated metal insulator semiconductor heterostructure field effect transistors yielded threshold voltages (Vth) of up to +1 V. The devices withstand negative and positive gate-biased stress and a positive Vth is maintained even after long-time negative bias stress