PULSED LASER AND ELECTRON BEAM INDUCED DIFFUSION OF ANTIMONY IN SILICON

The aim of this work is to compare the diffusion into silicon of a thin film (~ 100 Å) of deposited antimony induced either by a pulsed laser irradiation or electron beam and to interpret the different experimental behaviours as observed by Rutherford backscattering spectrometry, by using the calculated temperature distributions obtained by solving the heat flow equation for the two different annealing processes

Ca silicide films-promising materials for silicon optoelectronics

Single-phase films of semiconductor and semimetallic calcium silicides (Ca2Si, CaSi, and CaSi2), as well as films with a significant contribution of Ca5Si3 and Ca14Si19 silicides, were grown on single-crystal silicon and sapphire substrates. The analysis of the crystal structure of the grown films was carried out and the criterion of their matching with silicon and sapphire substrates was determined. Some lattice-matching models were proposed, and the subsequent deformations of the silicide lattices were estimated. Film's optical functions, including the optical transparency, were calculated from the optical spectroscopy data and an extended comparison was performed with the results of ab initio calculations. The real limits of the optical transparency for the films on sapphire substrates were established. The maximum transparency limit (3.9 eV) was observed for the CaSi film. Based on an analysis of the photoelectric properties of Ca2Si/Si diodes on n- and p-type silicon substrates, a perspective of their applications in silicon optoelectronics was discussed

Ca silicide films—promising materials for silicon optoelectronics

Single-phase films of semiconductor and semimetallic calcium silicides (Ca2Si, CaSi, and CaSi2), as well as films with a significant contribution of Ca5Si3 and Ca14Si19 silicides, were grown on single-crystal silicon and sapphire substrates. The analysis of the crystal structure of the grown films was carried out and the criterion of their matching with silicon and sapphire substrates was determined. Some lattice-matching models were proposed, and the subsequent deformations of the silicide lattices were estimated. Film’s optical functions, including the optical transparency, were calculated from the optical spectroscopy data and an extended comparison was performed with the results of ab initio calculations. The real limits of the optical transparency for the films on sapphire substrates were established. The maximum transparency limit (3.9 eV) was observed for the CaSi film. Based on an analysis of the photoelectric properties of Ca2Si/Si diodes on n- and p-type silicon substrates, a perspective of their applications in silicon optoelectronics was discussed